SDM INSTITUTE OF TECHNOLOGY, UJIRE

2nd Internal Assessment

Basic Electronics
Max.Mark:25 Date:23-04-2011
Class: E section Time:2.30-3.30 P.M
Part-A

1. The depletion layer capacitance effect occurs in a diode when it is_______

a) Forward Bias b) Reverse biased c) Unbiased d)All of these
2. The efficiency of full wave rectifier is about_______%
a) 40.6 b) 0.46 c) 1.21 d) 81.2
3. Zener diode acts as a _______device
a) Constant current b) Constant voltage c) Constant power d) Variable voltage
4. The barrier potential of a silicon pn-junction is approximately
a) 0.3V b) 0.1V c) 0.7V d) 1.2V
5. A zener diode is used as voltage regulator when it is_________biased.
a) forward b) Reverse c) Unbiased d) None of these

Part-B

Answer any 4. Each question carries 5 marks.

1. Explain the operation of forward biased pn- junction diode & Draw the V-I
characteristics of a P-N junction diode.
2. Draw & explain the circuit of a bridge rectifier & show that ripple factor of bridge
rectifier is 0.48.
3. What is reverse recovery time? Explain.
4. Derive the expression for ripple factor and efficiency of a full-wave rectifier.
5. Draw & explain the working of Half-wave rectifier circuit with waveforms.
6. In a full wave rectifier the input in fed from a 30-0-30V transformer. The load and diode
forward resistances are 100 ohms and 10 ohms respectively. Calculate the average or D.C
voltage and efficiency.
7. Explain the principle of working of zener regulator.