BI TP CHNG 5.

TRANSISTOR HIU NG TRNG (FET)

A. PHN TCH MT CHIU (DC)
JFET

nh thin bng dng c nh 1. Cho mch in nh hnh v. Bit VDD = 16V ; VGG = 2V ; RG = 1M; RD = 2k;
I DSS = 10mA; VGS 0 = 8V ; Hy xc nh: a) VGSQ ; I DQ ; VDS b) V D ; VG ; VS Hnh v bi 1
V DD RD

C2
V0

Li gii:
a) VGSQ = VGG = 2V
V 2V I DQ = I DSS 1 GS = 10mA1 = 5,625mA V 8V GS 0 V DS = VDD I D RD = 16V (5,625 mA)(2k ) = 4,75V
2 2

Vi

C1

RG

V GG

b) VD = VDS = 4,75V ; VG = VGS = 2V ; VS = 0V

2. Cho mch in nh hnh v bi 1. Bit

VDD = 14V ;VD = 9V ; RG = 1M; RD = 1,6k; I DSS = 8mA; VGS 0 = 4V ; Hy I D ; VDS ; VGG .

xc

nh:

3. Cho mch in nh hnh v bi 1. Bit V DD = 20V ; VGG = 0V ; RG = 1M; RD = 2,2k;

I DSS = 5mA; VGS 0 = 5V ; Hy xc nh: VD .

T nh thin 4. Cho mch in nh hnh v. Bit V DD = 20V ; RG = 1M; R D = 3,3k; RS = 1k;

I DSS = 8mA; VGS 0 = 6V ; Hy xc nh: a) VGSQ ; I DQ ; VDS b) V D ; VG ; VS
RD V DD

C2
V0

Li gii: a) VGS = I D RS Phng trnh Shockley:

ID V = I DSS 1 GS V GS 0
2

Vi

C1

(1)

RG

RS

(2) Hnh v bi 4

 I R Thay (1) vo (2) ta c: I D = I DSS 1 D S VGS 0

. Khai trin thnh phng trnh bc 2 i

R vi I D : S V GS 0

2 2 RS 1 ID + V GS 0 I DSS

I D + 1 = 0 . Gii phng trnh bc 2 ny ta thu c 2

nghim:
I D1 = 13,9 mA > I DSS = 8 mA (v l loi) 0 < I D 2 = 2,6 mA < I DSS = 8 mA (tho mn)

Vy I D = I D = 2,6 mA
Q Q2

Thay I D = 2,6 mA vo phng trnh (1) ta c: VGS = I D RS = 2,6mA.1k = 2,6V

Q Q Q

VDS = VDD I D (RS + RD ) = 8,82 V

b) VS = I D RS = 2.6 V
VD = VDS + VS = 11,42 V

VG = 0 V

hoc
V DD

VD = VDD I D RD = 11,42V

5. Cho

mch

in

nh

hnh

v.

Bit
Vi C1

VDD = 12V ; RD = 1,5k; RS = 680; I DSS = 12mA; VGS 0 = 6V ; Hy xc nh: a) VGSQ ; I DQ ; VDS b) V D ; VG ; VS

RD

C2
V0

RS

6. Cho mch in nh hnh v bi 4. Bit

VDD = 18V ; RD = 2k; RS = 510; RG = 1M; VS = 1,7 V ; VGS 0 = 4V ; Hy xc nh: a) VGSQ ; I DQ ; I DSS b) V D ; VDS
RD

Hnh v bi 5
V DD

7. Cho

mch

in

nh

hnh

v.

Bit
RS

V DD = 20V ; RD = 2,2k; RS = 680; I DSS = 4,5mA; VGS 0 = 5V ; Hy xc nh: I D ; VDS ; V D ; VS ;

nh thin t cp (nh thin bng mch phn p) 8. Cho mch in nh hnh v. Bit

Hnh v bi 7

VDD = 16V ; RD = 2,4k; RS = 1,5k; R1 = 2,1M; R2 = 270k; I DSS = 8mA; VGS 0 = 4V ;

Hy xc nh: a) VGS ; I D ;
Q Q

b) V D ; VS ; V DS ; VDG

Li gii:
VG = R2VDD = 1,82V R1 + R2
(1)

2

V DD RD R1

C2 T1
10uF

V0

VGS = VG I D RS

Vi

C1
5uF

Phng trnh Shockley:

V I D = I DSS 1 GS V GS 0

(2)

R2

RS

CS = 20uF

V I R Thay (1) vo (2) ta c: I D = I DSS 1 G D S VGS 0

Hnh v bi 8 2 . Khai trin thnh phng trnh bc 2

R i vi I D : S V GS 0

2 2 RS ID + VGS 0

V 1 G V GS 0

VG 1 I I D + 1 V DSS GS 0

= 0 . Gii phng trnh

bc 2 ny ta thu c 2 nghim:

I D1 = 6,2 mA VGS 1 = VG I D RS = 1,82V (6,2mA)(1,5k ) = 7,48V < VGS 0 = 4V (v l

loi) I D 2 = 2,4 mA VGS 2 = 1,8V (tho mn)

Vy I D = I D 2 = 2,4 mA ; VGS = VGS 2 = 1,8V

Q Q

VDS = VDD I D (RS + R D ) = 6,64V VS = I D RS = 3,6 V VDG = V D VG = 8,42 V

RD V DD

VD = VDD I D RD = 10,24V

9. Cho mch in nh hnh v. Bit

VDD = 16V ; RD = 2,2k; RS = 2,2k;VSS = 4V ; I DSS = 6mA; VGS 0 = 6V ; Hy xc nh:

a) VGS ; I D ;
Q Q

RS V SS

b) VS ; VDS ; D-MOSFET

Hnh v bi 9

10. Cho mch in nh hnh v. Bit R1 = 110M; R2 = 10M ;

V DD = 18V ; RD = 1,8k; RS = 750; I DSS = 6mA; VGS 0 = 3V ; Hy xc nh:

VGSQ ; I DQ ; VDS .

Gi : Cch gii ging nh i vi bi 8 (mch nh thin t cp cho JFET). Ch : VGS 0 < VGS < VGS max ; vi VGS max > 0
Q

p s: I D = 3,1 mA; VGS = 0,8V ; VDS 10,1V .

Q Q

V DD RD R1 RD

V DD

C2
V0

C2

V0

Vi

C1

Vi

C1
RG R2 RS CS RS

Hnh v bi 10

Hnh v bi 11

11. Cho mch in nh hnh v. Bit RG = 1M ;

VDD = 20V ; RD = 6,2k; RS = 2,4k; I DSS = 8 mA; VGS 0 = 8V ; Hy xc nh:

VGSQ ; I DQ ; VD .

12. Cho

mch

in

nh

hnh

v.

Bit

VDD = 20V ; RD = 1,5k ;

I DSS = 10 mA; VGS 0 = 4V ; Hy xc nh: VGSQ ; I DQ ; VD .

V DD

V DD RD

V DD RD

C2
V0

R1

RD

C2

V0

Vi

C1

RG

Vi C1

R2

RS

CS

Hnh v bi 12 E-MOSFET

Hnh v bi 13

Hnh v bi 14

13. Cho Li gii:

mch

in

nh

hnh

v.

Bit

VDD = 12V ; RD = 2k ; RG = 10 M ;

I D (on ) = 6 mA; VGS (on ) = 8V ; VGS (Th ) = 3V ; C1 = C 2 = 1F . Hy xc nh: VGSQ ; I DQ ; VDSQ .

k=

(V

I D (on )

GS (on )

VGS (Th ) )

6mA = 0,24 x10 3 A / V 2 2 (8V 3V )

Thay (1) vo (2) ta c: I D = k (VDD I D RD VGS (Th ) )2 . Khai trin thnh phng trnh bc 2 i vi I D :
2 2 R D I D 2 R D (V DD VGS (Th ) ) + 1 2 I D + (V DD VGS (Th ) ) = 0 . k

M I D = k (VGS VGS (Th ) )2

VGS = VDD I D RD

(1) (2)

Gii phng trnh bc 2 ny ta thu c 2 nghim:

I D 2 = 2,8 mA VGS 2 = 6,4V > 0 (tho mn)

I D1 = 7,2 mA VGS 1 = VDD I D RD = 12V (7,2mA)(2k ) = 2,4V < 0 (v l loi)

Vy I DQ = I D 2 = 2,8 mA ; VGSQ = VGS 2 = 6,4V ; VDSQ = VGSQ = 6,4V .

14. Cho

mch

in

nh

hnh

v.

Bit

R1 = 22M; R2 = 18M ;

VDD = 40V ; RD = 3k; RS = 820; I D (on ) = 3 mA; VGS (on ) = 10 V ; VGS (Th ) = 5V ; Hy

xc
V DD

nh: VGS ; I D ; VDS .

Q Q

RV Gi : VG = 2 DD = 18V ; R1 + R2 k=

RD

C2
V0

(V

I D (on )

GS ( on )

VGS (Th ) )

3mA = 0,12 x10 3 A / V 2 2 (10V 5V )

(1)

RG

M I D = k (VGS VGS (Th ) )2

VGS = VG I D RS

C1
RS

(2)

Thay (1) vo (2) v gii phng trnh bc 2 i vi I D . p s: I D 6,7 mA ; VGS = 12,5V ; VDS = 14,4V .
Q Q

Hnh v bi 15

15. Cho

mch

in

nh

hnh

v.

Bit

VDD = 22V ; RD = 1,2k ; RG = 1M ;

I D (on ) = 5 mA; VGS (on ) = 7 V ; VGS (Th ) = 4 V ; RS = 510 . Hy xc nh:

a) VGS ; I D ; VDS .
Q Q Q

b) VD ; VS .

Cc mch kt hp gia BJT v FET 16. Cho mch in nh hnh v. Bit VDD = 16V ; RE = 1,6k ; R = 1M; R1 = 82k;
R2 = 24k; I DSS = 12 mA; VGS 0 = 6V ; ( BJT ) = 180 . Hy tnh VD ; VC .

V DD RD RB R1 R VC R2 VD

V CC RC R1 R3

V CC RC VC

RB

VD

VG R2

VD

RE

RS

RS

Hnh v bi 16

Hnh v bi 17

Hnh v bi 18

Li gii: Do RE = 180.1,6k = 288k > 10R2 = 240k nn ta c th s dng cng thc phn p tnh
R2VDD = 3,62V (R 1 + R2 ) Vi VBE = 0,7 V ta c: VE = VB VBE = 2,92V V V 2,92V I E = RE = E = = 1,825 mA vi I C I E = 1,825 mA . R E R E 1,6k Ngoi ra I D = I S = I C , VD = VDD I D RD = 11,07 V

xp x in p VB nh sau: VB =

Phng trnh Shockley:

ID V = I DSS 1 GS V GS 0 . Gii phng trnh cho VGS ta thu c 2 nghim: = 3,66 V (tho mn) = 8,34 V < VGS 0 = 6 V (loi)
2

VGS 1 = VGS 0 1 VGS 2 = VGS 0 1 +

ID I DSS ID I DSS

VGSQ = VGS1 = 3,66V ; VC = VB VGSQ = 3,62V ( 3,66V ) = 7,28V

I DSS = 8mA; VGS 0 = 4V ; ( BJT ) = 80 . Hy tnh VD ; VB .

17. Cho mch in nh hnh v. Bit VCC = 16V ; RS = 2,4k ; RB = 470k; RC = 3,6k; 18. Cho mch in nh hnh v. Bit VCC = 20V ; RS = 1,2k ; R B = 330k; RC = 1,1k;
R1 = 91k; R2 = 18k; I DSS = 6mA; VGS 0 = 6V ; ( BJT ) = 160 . Hy tnh:

a) VG ; VGS ; I D .
Q Q

b) I E ; I B ;VD ;VC

Bi tp thit k 19. Cho mch in nh hnh v. Bit VDD = 20V ; I D = 2,5 mA;
Q

VD = 12V ; I DSS = 6mA; VGS 0 = 3V ; Hy xc nh: RD ; RS ; Cc gi tr tiu chun thng

mi gn nht ca cc in tr ny l bao nhiu? Li gii:

RD = VDD VD 20V 12V = = 3,2k I DQ 2,5mA
. Gii phng trnh cho VGS ta thu c 2 nghim: = 1,06 V (tho mn) = 4,94 V < VGS 0 = 3V (loi) VGSQ I DQ
2

Phng trnh Shockley:

ID V = I DSS 1 GS V GS 0

VGS 1 = VGS 0 1 VGS 2 = VGS 0 1 +

ID I DSS ID I DSS

VGSQ = VGS1 = 1,06V ; RS =

( )

( 1V ) = 0,4k . 2,5mA

Cc gi tr tiu chun thng mi gn nht ca cc in tr ny l:

RD = 3,2k 3,3k
RS = 0,4k 0,39k
V DD

V DD RD VD
RG RD R1 VD RD

V DD

C2
V0

RS

R2

Vi
RS

C1

Hnh v bi 19

Hnh v bi 20

Hnh v bi 21

20. Cho mch nh thin t cp nh hnh v. Bit R1 = 91k; R2 = 47k ;

VDD = 16V ; RD = 1,8k; VD = 12V ; VGSQ = 2V ; Hy xc nh: RS ; Gi tr tiu chun

thng mi gn nht ca in tr ny l bao nhiu?

21. Cho mch in nh hnh v. Bit I D (on ) = 4 mA; VGS (on ) = 6 V ; VGS (Th ) = 3V ; RG = 10 M ; v V DS = V DD ; I D = I D (on ) . Hy xc nh: VDD ; RD . Pht hin v x l li 22. Cho mch in nh hnh v. Bit VDD = 12V ; RD = 2k; RS = 1k; RG = 1M . Hy phn on v hot ng ca mch trong 2 trng hp a) VS = 4V ; b) VS = 0V ;
V DD V DD RD

1 2

C2
V0

RD R1

Vi

C1
VS RG RS

VG R2

Vs
RS

Hnh v bi 22

Hnh v bi 23

23. Cho

mch

in

nh

hnh

v.

Bit

I DSS = 10mA; VGS 0 = 6V ; VG = 3,7V ;

R1 = 330k; R2 = 75k ; VDD = 20V ; RD = 2,2k; RS = 1k;VS = 6,25V ; Hy xc nh

xem nguyn nhn no c th gy ra trng thi khng mong mun ca mch. FET knh P 24. Cho mch in nh hnh v. Bit I DSS = 8mA; VGS 0 = 4V ; R1 = 68k; R2 = 20k ;
VDD = 20V ; R D = 2,7k; RS = 1,8k; Hy xc nh VGSQ ; I DQ ; VDSQ .
V DD

V DD RD
V DD

R1

RD

ID

ID

RD

VG

RG
R2 RS IS

ID

RG

RS

Hnh v bi 24

Hnh v bi 25

Hnh v bi 26

Li gii:

VG =

R2VDD 20k( 20V ) = = 4,55V R1 + R2 20k + 68k

VG VGS + I D RS = 0 VGS = VG + I D RS

(nh lut Kirchhoff cho in p trong mt vng kn).

(1)
2

Phng trnh Shockley:

ID V = I DSS 1 GS V GS 0

(2)
. Khai trin thnh phng trnh bc 2
2
2

V +I R Thay (1) vo (2) ta c: I D = I DSS 1 G D S VGS 0

R 2 2R i vi I D : S I D S V GS 0 VGS 0

V VG 1 1 G + V I I D + 1 V = 0 . Gii phng trnh GS 0 GS 0 DSS

bc 2 ny ta thu c 2 nghim: loi)

I D1 = 6,8 mA VGS 1 = VG + I D RS = 4,55V + (6,8mA)(1,8k ) = 7,69V > VGS 0 = 4V (v l

I D 2 = 3,3 mA 0 < VGS 2 = 1,39V < VGS 0 = 4V (tho mn)

Vy I D = I D 2 = 3,3 mA ; VGS = VGS 2 = 1,39V

Q Q

V DS = VDD + I D (RS + RD ) = ( 20V ) + (3,3mA)(1,8k + 2,7k ) = 5,15V

25. Cho mch in nh hnh v. Bit V DD = 18V ; RG = 1M; RD = 2,2k; RS = 510k;

I DSS = 8mA; VGS 0 = 4V ; Hy xc nh: a) VGSQ ; I DQ ; VDS b) V D ; VG ; VS

26. Cho

mch

in

nh

hnh

v.

Bit

VDD = 16V ; RD = 2k ; RG = 1M ;

I D (on ) = 4 mA; VGS (on ) = 7 V ; VGS (Th ) = 3V ; Hy xc nh: VGSQ ; I DQ ; VDSQ .

B. PHN TCH XOAY CHIU (AC)

JFET

nh thin bng dng c nh (JFET) 27. Cho mch in nh hnh v (a). Bit VDD = 16V ; VGG = 2V ; RG = 1M; RD = 2k;
I DSS = 10mA; VGS 0 = 8V ; g d = 40 S . a) Hy xc nh: VGSQ ; I DQ ; VDS

b) Hy v s tng ng xoay chiu ca mch v xc nh g m ; rd . Xc nh tr khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p K U .

V DD RD

C2
+
V0

Ii

I0

Vi

C1

+ G D
gmV gs ID RD V0 Z0

RG
Vi

Zi

RG

rd

V GG

Hnh v (a) bi 27

Hnh v (b) bi 27

Li gii:
a) VGSQ = VGG = 2V
I DQ V 2V = I DSS 1 GS = 10mA1 = 5,625mA V 8V GS 0 = VDD I D RD = 16V (5,625 mA)(2k ) = 4,75V
2 2

V DS b) M hnh tng ng xoay chiu ca mch nh hnh (b). 2I 2(10mA) g m 0 = DSS = = 2,5 mS VGS 0 8V
VGSQ = 2,5mS 1 ( 2V ) = 1,88 mS g m = g m 0 1 ( 8V ) V GS 0 rd = 1 / g d = 1 / 40 S = 25k

Tr khng vo Z i = RG = 1M . Tr khng ra Z 0 = RD // rd = 2k // 25k = 1,85k . H s khuch i in p K U = g m (RD // rd ) = 3,48 T nh thin(JFET) 28. Cho mch in nh hnh v (a). Bit V DD = 20V ; RG = 1M; R D = 3,3k; RS = 1k;
I DSS = 8mA; VGS 0 = 6V ; g d = 20 S . a) Hy xc nh: VGSQ ; I DQ ; VDS b) Hy v s tng ng xoay chiu ca mch v xc nh g m ; rd . Xc nh tr

khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p K U trong 2 trng hp (b1) khi c t C S v (b2) khi khng c t C S .

V DD

+
RD

Ii

I0

+ G D
gmV gs

C2
V0 Vi Zi

Vi

C1

rd
RD

ID V0

RG RS

Z0

RG

RS

CS

I0+ID

S
I0

Hnh v (a) bi 28

Hnh v (b) bi 28

Li gii: a) Xem bi 4. Kt qu: VGS = 2,6V ; I D = 2,6 mA

Q

b) (b1) khi c t C S th s tng ng xoay chiu ca mch ging nh hnh v (b) bi 27 v cch xc nh cc tham s cng ging nh cch tnh phn b) bi 27. Kt qu: g m 0 =
2 I DSS 2(8mA) = = 2,67 mS VGS 0 6V

VGSQ = 2,67 mS 1 ( 2,6V ) = 1,51 mS g m = g m 0 1 V ( 6V ) GS 0 rd = 1 / g d = 1 / 20 S = 50k

Tr khng vo Z i = RG = 1M . Tr khng ra Z 0 = RD // rd = 3,3k // 50k 3,3k . H s khuch i in p K U = g m (R D // rd ) (b2) khi khng c t C S : s tng ng xoay chiu ca mch ging nh hnh v (b) bi 28. Cc tham s g m 0 ; g m ; rd ; Z i c gi tr ging nh phn (b1). V Z 0 =
V0 I R Vi = 0V = D D (1) nn ta c gng tm cch biu din I 0 theo I D . I0 I0
I 0 = g mV gs + I rd I D

p dng nh lut Kirchhoff cho dng in, ta c: nhng Vrd = V0 + V gs

I 0 = g mV gs + V0 + V gs

v Vrd = V0 V Rs ; V Rs = V gs

I R 1 I D hay I 0 = g m + V gs D D I D vi V0 = I D RD rd rd rd I R 1 M ta c: V gs = (I D + I 0 )R S nn I 0 = g m + (I D + I 0 )RS D D I D rd rd

 R R I D 1 + g m RS + S + D rd rd Suy ra: I 0 = R 1 + g m RS + S rd

(2)

R 1 + g m R S + S R D rd T (1) v (2) suy ra: Z 0 = . RS R D 1 + g m R S + + rd rd R R R R R Nu rd 10 RD th: 1 + g m RS + S >> D 1 + g m RS + S + D 1 + g m RS + S rd rd rd rd rd v ta c: Z 0 RD .

p dng nh lut Kirchhoff cho in p, ta c:

Vi V gs V Rs = 0; V gs = Vi I D RS

M Vrd = V0 VRs ; v I ' =

Vrd V0 VRs = rd rd ( I D RD ) I D RS I D = g m (Vi I D RS ) + rd g mVi ID = R + RS 1 + g m RS + D rd g m RDVi in p ra: V0 = I D RD = . R D + RS 1 + g m RS + rd

Vy h s khuch i in p KU ca mch: K U = Nu rd 10(RD + RS ) th K U =

V0 = Vi

g m RD R + RS 1 + g m RS + D rd

V0 g R = m D Vi 1 + g m RS Thay s ta c: Z 0 RD = 3,3k ( do rd = 50k > 10 RD = 33k ); K U = 1,92 .

nh thin t cp(JFET) 29. Cho mch in nh hnh v (a) di y. Bit I DSS = 12mA; VGS 0 = 3V ; rd = 100k;
VDD = 16V ; RD = 2k; RS = 610k; R1 = 82M; R2 = 11M;

a) Hy xc nh: VGS ; I D ;
Q Q

b) Hy v s tng ng xoay chiu ca mch v xc nh g m ; rd . Xc nh tr

khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p K U ca mch.

V DD RD R1

+ C2
V0 Zi Vi

+ G
R2 R1 gmV gs

T1
10uF

Vi

C1
5uF R2 RS

rd

RD

V0 Z0

CS = 20uF

Hnh v (a) bi 29

Hnh v (b) bi 29

Gi : a) Cch gii ging bi 8. b) S tng ng xoay chiu ca mch ging nh hnh v (b) bi 28.
g m0 = 2 I DSS VGS 0
VGSQ g m = g m 0 1 V GS 0

rd = 1 / g d

Tr khng vo Z i = R1 // R2 . Tr khng ra Z 0 = RD // rd .
V gs = Vi ;

V0 = g mV gs (R D // rd )

H s khuch i in p K U =

V0 = g m (RD // rd ) . Vi

30. Gii bi 29 cho trng hp khng c t C S . Cu hnh JFET cc ca chung 31. Cho mch in nh hnh v (a). Bit VDD = 12V ; RD = 3,6k; RS = 1,1k; g d = 50S ;
I DSS = 10mA; VGS 0 = 4V ; C1 = C 2 = 10F ; in p vo c dng hnh sin vi bin

bng 40mV. a) Hy xc nh: VGS ; I D ;

Q Q

b) Hy v s tng ng xoay chiu ca mch v xc nh g m ; rd . Xc nh tr

khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p K U ca mch.

V DD RD

C2
V0

rd

+ S
Zi RS Zi
'

D
gmV GS Z0 G
'

C1 Vi
RS
Vi

RD

Z0

V0

Hnh v (a) bi 31

Hnh v (b) bi 31

Gi : b)S tng ng xoay chiu ca mch ging nh hnh v (b) bi 31.

D-MOSFET

32. Cho mch in nh hnh v (a). Bit R1 = 110M; R2 = 10M ; g d = 10S ;

V DD = 18V ; RD = 1,8k; RS = 150; I DSS = 6mA; VGS 0 = 3V ;

a) Hy xc nh: VGS ; I D ; .
Q Q

b) Hy v s tng ng xoay chiu ca mch v xc nh g m ; rd . Xc nh tr khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p K U ca mch. Gi : a) p s: I D = 7,6 mA; VGS = 0,35V ;
Q Q

b) S tng ng xoay chiu ca mch ging nh hnh v (b). Cch gii ging bi 29.
V DD

R1

RD

C2

V0

+ G
Zi
R2 R1 gmV gs

+ D

Vi

C1

R2

Vi

rd

RD

V0

RS

CS

Z0

Hnh v (a) bi 32

Hnh v (b) bi 32

33. Cho mch in nh hnh v. Bit RG = 10M ; rd = 60k;

VDD = 22V ; RD = 1,8k; RS = 100; I DSS = 12 mA; VGS 0 = 3,5V ;

a) Hy xc nh: VGS ; I D ; VD .
Q Q

b) Hy v s tng ng xoay chiu ca mch v xc nh g m . Xc nh tr khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p K U ca mch.

V DD V DD RD

C2
V0

R1

RD

C2

V0

Vi

C1

Vi

C1

RG

RS

CS

R2

RS

CS

Hnh v bi 33 E-MOSFET

Hnh v bi 35

Cu hnh hi tip cc mng ca EMOSFET 34. Cho mch in nh hnh v (a). Bit VDD = 12V ; RD = 2k ; RG = 10M ; g d = 20S ;
I D (on ) = 6 mA; VGS (on ) = 8V ; VGS (Th ) = 3V ; C1 = C 2 = 1F ;

a) Hy xc nh: VGS ; I D ; VDS .

Q Q Q

b) Hy v s tng ng xoay chiu ca mch v xc nh g m . Xc nh tr khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p K U ca mch. Gi : a) Cch gii ging bi 13.
b) S tng ng xoay chiu ca mch ging nh hnh v (b).

V DD RD

RF Vi

C2
V0

+
Zi

Ii

+
V0 Z0

RG

Ii gmV gs

Vi

rd

RD

C1
S

Hnh v (a) bi 34

Hnh v (b) bi 34

g m = 2k VGSQ VGS (Th ) = 1,63 mS

rd = 1 / g d = 50 k

p dng nh lut Kirchhoff cho dng in ti nt D, ta c:

V0 V V0 ; (1) V gs = Vi ; (2) (3) Ii = i rd // RD RF V0 V0 I i g mVi = I i = g mVi + ; rd // RD rd // RD Do : V0 = (I i g mVi )(RD // rd ) V V V (I i g mVi )(RD // rd ) vi I i = i 0 = i RF RF V R + r // RD RF . Nu RF >> (rd // RD ) th: Z i Tr khng vo Z i = i = F d I i 1 + g m (rd // RD ) 1 + g m (rd // RD ) RF = 2,53 M Thay s: Z i 1 + g m (rd // RD ) Tr khng ra Z 0 = RD // rd // RF . Nu RF >> (rd // RD ) th: Z 0 RD // rd I i = g mVGS +

Thay s: Z 0 = RD // rd // RF = 1,92 k T cc phng trnh (1), (2), (3) suy ra:

V0 Vi V0 = g mVi + RD // rd RF 1 gm V0 RF H s khuch i in p K U = . Thay s: K U 3,21 . = 1 1 Vi + R D // rd R F

Cu hnh nh thin t cp ca EMOSFET 35. Cho mch in nh hnh v. Bit

R1 = 40M; R2 = 10M ;
V DD = 30V ; R D = 3,3k; RS = 1,2k; VGS (Th ) = 3V ; k = 0,4 x10 3 A 2 / V . in p vo c

rd = 40k;

dng hnh sin vi bin bng 0,8mV. Hy v s tng ng xoay chiu ca

mch v xc nh g m . Xc nh tr khng vo ( Z i ), tr khng ra ( Z 0 ), h s khuch i in p KU ca mch. Gi : S tng ng xoay chiu ca mch ging nh hnh v (b) bi 29. Cc thng s c tnh nh phn b) bi 29.
THIT K MCH KHUCH I DNG FET

36. Thit
V DD

thin bng dng c nh nh hnh v. Bit = 30V ; RG = 10M; g d = 20 S ; I DSS = 10mA; VGS 0 = 4V ; h s khuch i in p

mch

nh

xoay chiu K U = 10 .
a) Hy xc nh: g m ; rd ; RD ;VDSQ b) Xc nh tr khng vo ( Z i ), tr khng ra ( Z 0 ) ca mch.
V DD V DD RD RD

C2
V0

C2
V0

Vi

C1

Vi

C1

RG RG

RS

CS

Hnh v bi 36

Hnh v bi 37

37. Hy la chn cc gi tr ca RD ; RS cho mch in nh hnh v (khi c t CS ). Bit

1 g d = 20 S ; VDD = 20V ; RG = 10 M; I DSS = 10mA; VGS 0 = 4V ; VG = 0V ; VGSQ = VGS 0 4 C1 = C 2 = 0,1F ; C S = 40F ; h s khuch i in p xoay chiu K U = 8 .