MOSFET Unified Current Model:

VGS > VT ID = k ' V min W V2 (VGT V min min )(1 + V DS ) L 2 = min( V GT ,V DS ,V DSAT ) V SB + 2 f 2 f )

Multiply by channel length modulation term ONLY in saturation region (for long and short channels)

VGT = VGS VT VT = VT 0 + ( Notes: If Vmin =V DS If Vmin =V GT If Vmin =V DSAT

Linear Saturation due to Pinch-off (yielding long channel saturation current) Saturation due to Velocity Saturation (i.e. short-channel effect) (yielding short channel saturation current)

Gate Capacitance:

Overlap Capacitance: C gsov = C gdov = C oW Diffusion Capacitance: C diff = Cbottom + Csidewall = C j Area + C jsw Perimeter
C diff = C j Ls W + C jsw ( 2Ls + W )

Where Cj and C jsw follow the diode capacitance equation Delay Calculation: C V I +I Iav Method: T p = where I av = 1 2 I av 2 R + R2 V V Re q Method:T p = 0.69 Req C where Req = 1 , and R1 = out1 and R2 = out2 2 I1 I2 (1, 2 are the transition periods start and end point respectively)