A D V A N C E D S E M I C O N D U C T O R, I N C. REV.

A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 TELEX: 18-2651 FAX (818) 765-3004 1/1
CHARACTERISTICS T = 25

C
TRANS1.SYM
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I

= 10 mA -60 V
BV
CBO I

= 10 A -60 V
I
CBO
V

= -50 V T

= 25

C
T

= 150

C
0.01
10
A
I
CEX
V

= -30 V V

= 0.5 V 50 nA
I
B
V

= -30 V V

= 0.5 V 50 nA
BV
EBO I

= 10 A -5.0 V
h
FE
V

= -10 V I

= 100 A
I

= 1.0 mA
I

= 10 mA
I

= 150 mA
I

= 500 mA
75
100
100
100
50
300
---
V
CE(SAT)
I

= 150 mA I

= 15 mA
I

= 500 mA I

= 50 mA
-0.4
-1.6
V
V
BE(SAT)
I

= 150 mA I

= 15 mA
I

= 500 mA I

= 50 mA
-1.3
-2.6
V
SILICON PNP TRANSISTOR

DESCRIPTION:
The 2N2907A is Designed for
General Purpose Amplifier and
Switching Applications.
MAXIMUM RATING:
I

600 mA
V

-60 V
P

1.8 W @ T

= 25

C
T

-65

C to +200

C
T

-65

C to +200

97

C/W
PACKAGE STYLE TO-18
A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 TELEX: 18-2651 FAX (818) 765-3004 2/2
2N2907A
DYNAMIC CHARACTERISTICS T = 25

C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
f
t
V

= -20 V I

= 50 mA f = 100 MHz 200 MHz

C
ob
V

= -10 V f = 100 KHz 8.0 pF

C
ib
V

= -2.0 V f = 100 KHz 30 pF

t
on
V

= -30 V I

= 150 mA I

= 15 mA 45 nS
t
d
V

= -30 V I

= 150 mA I

= 15 mA 10 nS
T
r
V

= -30 V I

= 150 mA I

= 15 mA 40 nS
t
off
V

= -6.0 V I

= 150 mA I

=I

= 15 mA 100 nS
t
s
V

= -6.0 V I

= 150 mA I

=I

= 15 mA 80 nS
t
f
V

= -6.0 V I

= 150 mA I

=I

= 15 mA 30 nS