435 Route 206 P.O.

Box 366 Newton, NJ 07860-0366

Ph. 973-579-7227 FAX 973-300-3600

FDS010 Si Photodiode
High Speed
The FDS010 is a high-speed silicon photodiode with a spectral response from 200nm to over 1100nm. This photodiode has a PIN structure that provides fast rise and fall times with a bias of 20V.

Electrical Characteristics
Spectral Response: Active Diameter: Active Area: Rise Time (RL=50): Fall Time (RL=50): NEP@900nm: Dark Current: Junction Capacitance (typ): Package: 200-1100nm 1.02mm 0.81mm <1ns (20V bias) <1ns (20V bias) 5.0 x 10-14 W/Hz (@20V bias) 2.5nA max (20V) 10pF @ 0Vbias 2pF @ -10Vbias T05, 0.36 can

Maximum Ratings
Damage Threshold CW: Damage 10ns Pulse: Max Bias Voltage: 100 mW/cm2 500mJ/cm 25V

The Thorlabs FDS010 photodiode is ideal for measuring both pulsed and CW light sources, by converting the optical power to an electrical current. The Si detector is housed in a T05 can, with an anode, cathode and case connection. The photodiode anode produces a current, which is a function of the incident light power and the wavelength. The responsivity (), can be read from Figure 1 to estimate the amount of photocurrent to expect. This can be converted to a voltage by placing a load resistor (RLOAD) from the photodiode anode to the circuit ground. The output voltage is derived as: Vo = P * () * RLOAD The bandwidth, fBW, and the rise time response, tR, are determined from the diode capacitance, CJ, and the load resistance, RLOAD, as shown below. Placing a bias voltage from the photo diode cathode to the circuit ground can lower the photo diode capacitance. fBW = 1/(2 * RLOAD *CJ), tR = 0.35/fBW

0636-S01 Rev C 8/01/05

Typical Circuit Diagram

Noise Filter (Typical

values)

FDS010

+
1K 0.1UF RLOAD

Typical Plots

Figure 1 - FDS010 Spectral Responsivity Curve

0.50

0.40 Responsivity (A/W)

0.30

0.20

0.10

0.00 200

300

400

500

600

700

800

900

1000

1100

Wavelength (nm)

Typical Responsivity Curve using Thorlabs calibration services.

0636-S01 Rev C 8/01/05