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BTA06 T/D/S/A BTB06 T/D/S/A: Sensitive Gate Triacs
BTA06 T/D/S/A BTB06 T/D/S/A: Sensitive Gate Triacs
BTA06 T/D/S/A BTB06 T/D/S/A: Sensitive Gate Triacs
. . .
FEATURES VERY LOW IGT = 10mA max LOW IH = 15mA max BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734)
DESCRIPTION The BTA/BTB06 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) RMS on-state current (360 conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 50mA diG/dt = 0.1A/s Parameter BTA BTB ITSM
A1 A2
TO220AB (Plastic)
Unit A
I2t dI/dt
A2s A/s
Tstg Tj Tl
Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 400 T/D/S/A
C C C
Symbol
Unit
VDRM VRRM
400
March 1995
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ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Quadrant T IGT VD=12V (DC) RL=33 Tj=25C I-II-III IV VGT VGD tgt IL VD=12V (DC) RL=33 Tj=25C Tj=110C Tj=25C Tj=25C I-II-III-IV I-II-III-IV I-II-III-IV I-III-IV II IH * VTM * IDRM IRRM dV/dt * IT= 100mA gate open ITM = 8.5A tp= 380s VDRM VRRM Rated Rated up to Tj=25C Tj=25C Tj=25C Tj=110C Tj=110C MAX MAX MAX MAX TYP MIN Tj=110C TYP 10 1 10 1 MAX MAX MAX MIN TYP TYP 10 20 15 10 20 15 1.65 0.01 0.75 10 5 10 5 V/s V/s 5 5 Suffix D 5 10 1.5 0.2 2 20 40 25 20 40 25 mA V mA S 10 10 A 10 25 V V s mA mA Unit
(dV/dt)c *
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Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA).
Fig.3 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB).
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Zth/Rth 1
Zt h( j-c)
0.1
Zt h(j-a)
tp( s)
0.01 1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
Fig.7 : Non Repetitive surge peak on-state current versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10ms, and corresponding value of I2t.
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F
O
M = N =
A B C D F G H I J L M N O P
DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.20 10.50 0.401 0.413 14.23 15.87 0.560 0.625 12.70 14.70 0.500 0.579 5.85 6.85 0.230 0.270 4.50 0.178 2.54 3.00 0.100 0.119 4.48 4.82 0.176 0.190 3.55 4.00 0.140 0.158 1.15 1.39 0.045 0.055 0.35 0.65 0.013 0.026 2.10 2.70 0.082 0.107 4.58 5.58 0.18 0.22 0.80 1.20 0.031 0.048 0.64 0.96 0.025 0.038
Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-TH OMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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