Module: Fundamentals of Analog Electronics Module Number: ENRE213

Electronic Devices and Circuit Theory, 9

th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

German-Jordanian University

School of Applied Natural Sciences -
Energy Engineering


Bipolar Junction Transistor

Configurations:
Common Base Configuration


































Fig. 3.2 Types of transistors: (a) pnp; (b) npn.


Fig. 3.6 Notation and symbols used with the
common-base configuration: npn transistor.

Fig. 3.8 Output or collector characteristics for a common-base transistor amplifier.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Common Emitter Configuration

Common Collector Configuration


















Fig. 3.13 Notation and symbols used with the
common-emitter configuration: npn transistor

Fig. 3.14 Characteristics of a silicon transistor in the common-emitter configuration: (a) collector characteristics; (b)
base characteristics.

Fig. 3.20 Notation and symbols used with the common-collector
configuration: (a) pnp transistor; (b) npn transistor.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Operating Point



























Fixed Bias Circuit


















Fig. 4.1 Various operating points within the limits of operation of a transistor.
Fig. 4.2 Fixed-bias circuit.

Fig. 4.3 DC equivalent of Fig. 4.2.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Fig. 4.4 Baseemitter loop.

Fig. 4.5 Collectoremitter loop.

Fig. 4.7 DC fixed-bias circuit for Example 4.1.

Fig. 4.9 Determining ICsat. Fig. 4.10 Determining ICsat for the fixed-bias configuration.

Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Emitter Bias












































Fig. 4.17 BJT bias circuit with emitter resistor.

Fig. 4.18 Baseemitter loop.


Fig. 4.19 Network derived from the result of Fig.
4.18

Fig. 4.20 Reflected impedance level of R
E
.

Fig. 4.21 Collectoremitter loop.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Design Operation















Transistor Switching Network






























Fig. 4.48 Example 4.19.

Fig. 4.49 Example 4.20.

Fig. 4.53 Transistor inverter.
Saturation conditions and the
resulting terminal resistance.

Cutoff conditions and the
resulting terminal resistance.

Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Fig. 4.56 Inverter for Example 4.24.

Fig. 4.57 Defining the time intervals of a pulse waveform.

Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

German-Jordanian University

School of Applied Natural Sciences -
Energy Engineering


Bipolar Junction Transistor

AC Analysis:
A model is an equivalent circuit that represents the AC characteristics of the
transistor.
A model uses circuit elements that approximate the behavior of the transistor.
There are two models commonly used in small signal AC analysis of a
transistor:
r
e
model
Hybrid equivalent model
The r
e
Transistor Model:
BJTs are basically current-controlled devices, therefore the re model uses a diode and a
current source to duplicate the behavior of the transistor. One disadvantage to this model is its
sensitivity to the DC level. This model is designed for specific circuit conditions.
Common Base Configuration























Fig. 5.6 (a) Common-base BJT transistor; (b) re model for the configuration of (a).



Fig. 5.7 Common-base re equivalent circuit.


Fig. 5.9 Defining Av = Vo/Vi for the common-
base configuration.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Common Emitter Configuration

Common Collector Configuration

Use the common-emitter model for the common-collector configuration.






Fig. 5.11 (a) Common-emitter BJT transistor; (b) approximate model for the configuration of a).

Fig. 5.17 re model for the common-emitter transistor
configuration.

Fig. 5.12 Determining Zi using the approximate

Fig. 5.16 Determining the voltage and current gain for the
common-emitter transistor amplifier.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

The Hybrid Equivalent Model:

The following hybrid parameters are developed and used for modeling the transistor.
These parameters can be found in a specification sheet for a transistor:
h
i
= input resistance
h
r
= reverse transfer voltage ratio (Vi/Vo) ~ 0
h
f
= forward transfer current ratio (Io/Ii)
h
o
= output conductance ~










































Fig. 5.22 Complete hybrid equivalent circuit.


Fig. 5.23 Common-emitter configuration: (a) graphical symbol; (b) hybrid equivalent
circuit

Fig. 5.24 Common-base configuration: (a) graphical symbol; (b) hybrid equivalent
circuit.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Common-Emitter re vs. h-Parameter Model























Fig. 5.25 Effect of removing h
re
and h
oe
from the hybird equivalent circuit.

Fig. 5.26 Approximate hybrid equivalent model.

Fig. 5.27 Hybrid versus re model: (a) common-emitter configuration; (b) common-base configuration.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

German-Jordanian University

School of Applied Natural Sciences -
Energy Engineering


BJT Amplifier Circuits:
Common Emitter Configurations:
Common Emitter Fixed-bias
The input is applied to the base
The output is from the collector
High input impedance
Low output impedance
High voltage and current gain
Phase shift between input and output is 180



























Fig. 5.34 Common-emitter fixed-bias configuration.

Fig. 5.35 Network of Fig. 5.34 following the removal
of the effects of VCC, C1 and C2.

Fig. 5.36 Substituting the re model into the network of Fig.
5.35.

Fig. 5.37Determining Zo for the network of Fig. 5.36.
C o
10R r
e
C
v
e
o C
i
o
v

r
R
A
r
) r || (R
V
V
A
>
=
= =
e B C o
r 10 R , 10R r i
e B C o
o B
i
o
i
A
) r )(R R (r
r R
I
I
A
|
|
|
|
> >
~
+ +
= =
C
i
v i
R
Z
A A =
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Common Emitter Voltage-divider Bias





























Fig. 5.39 Example 5.4.
Fig. 5.40 Voltage-divider bias configuration.
Fig. 5.41Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.40.
e C o
C o
r 10 R , 10R r
i
o
i
10R r
e i
o
i
e C o
o
i
o
i
I
I
A
r R
R
I
I
A
) r R )( R (r
r R
I
I
A
|
|
|
|
|
|
> ' >
>
~ =
+ '
'
~ =
+ ' +
'
= =
C
i
v i
R
Z
A A =
C o
10R r
e
C
i
o
v
e
o C
i
o
v
r
R
V
V
A
r
r || R
V
V
A
>
~ =

= =

Fig. 5.38 Demonstrating the 180 phase shift between input and output
waveforms.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Fig. 5.42 Example 5.5.










Common Emitter Bias






























Fig. 5.43 CE emitter-bias configuration.

Fig. 5.46 Example 5.6.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Common Base Configuration
The input is applied to the emitter.
The output is taken from the collector.
Low input impedance.
High output impedance.
Current gain less than unity.
Very high voltage gain.
No phase shift between input and output.

Fig. 5.44 Substituting the re equivalent circuit into the ac equivalent
network of Fig. 5.43.
E b
E e b
R Z
E
C
i
o
v
) R (r Z
E e
C
i
o
v
b
C
i
o
v
R
R
V
V
A
R r
R
V
V
A
Z
R
V
V
A
|
|
|
~
+ =
~ =
+
= =
= =
b B
B
i
o
i
Z R
R
I
I
A
+
= =
|
C
i
v i
R
Z
A A =

Fig. 5.46 Example 5.6.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud

Fig. 5.57 Common-base configuration.

Fig. 5.58 Substituting the re equivalent circuit into the ac equivalent network of Fig. 5.57.
e
C
e
C
i
o
v
r
R
r
R
V
V
A ~ = =
o
1
I
I
A
i
o
i
~ = = o
Fig. 5.59 Example 5.11.
Module: Fundamentals of Analog Electronics Module Number: ENRE213
Electronic Devices and Circuit Theory, 9
th
ed., Boylestad and Nashelsky

Lecturer: Dr. Omar Daoud