Shenzhen Tuofeng Semiconductor Technology Co.

, Ltd

SOT-23 Plastic-Encapsulate Transistors

S8050LT1
FEATURES Power dissipation PCM: 0.3 W (Tamb=25)
0. 95

SOT-23 TRANSISTOR (NPN)

1. BASE 2. EMITTER 3. COLLECTOR

1. 0

2. 4 1. 3

Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage VCE(sat) VBE(sat) VCE=1V, IC= 500mA IC=500 mA, IB= 50mA IC=500 mA, IB= 50mA VCE=6V, IC= 20mA

2. 9

1. 9

0. 95

Unit: mm

unless otherwise specified)

Test conditions MIN 40 25 5 0.1 0.1 0.1 120 50 0.6 1.2 V V 350 TYP MAX UNIT V V V

Ic= 100A, IE=0 Ic=1mA, IB=0 IE=100A, IC=0 VCB=40V, IE=0 VCB=20V, IE=0 VEB= 5V, IC=0 VCE=1V, IC= 50mA

0. 4

A A A

Transition frequency

fT

f=30MHz

150

MHz

CLASSIFICATION OF hFE(1) Rank Range L 120-200 H 200-350

DEVICE MARKING

S8050LT1=J3Y

Typical Characteristics

S8050 L T 1