Unit 4

Basic circuit concepts

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Sheet resistance Rs

The concept of sheet resistance is being used to know the resistive behavior of the layers that go into formation of the MOS device. Let us consider a uniform slab of conducting material of the following characteristics . ResistivityWidth Thickness W t

Length between faces L as shown n

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L t Click to Resistivity edit Master subtitle style W B

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Consider the resistance RAB between two opposite faces. RAB = ( L)/A ohm where A= cross sectional area RAB = ( L)/(tW) ohm

Consider the case in which L=W i.e a square of resistive material, then RAB = / t = Rs (ohm per square)

Where Rs = ohms per square or sheet resistance

It is to be noted that Rs is independent of the area of the slab. Hence 4/21/12 we can conclude that a 1um per side

Rs ohm per square

layers
metal Difffusion (n) Silicide Polysilicon N- txr channel p- txr channel

5m
0.03 10 50 2 4 15100 104 2.5 x 104

Orbit 2m
0.04 20 45 _ 15 30 2 x 104 4.5 x 104

Orbit 1.2m
0.04 20 45 _ 15 30 2 x 104 4.5 x 104

For p-diffusion it is 2.5 times the value given for n-diff

5m, 2m & 1.2m technology indicates the minimum feature size i.e 4/21/12 2

Sheet resistance concept applied to MOS txr & inverters

L= 2 & W= 2 The channel is square and the channel resistance R = 1square x Rs = 1 X 104 4/21/12 ohms

L = 8 & W = 2 Z = ( L/W) = 4 R= ZRS = 4 x 104 ohms This channel can be reguarded as four 2 x 2 squares in series

Lp.u : e.g 8 : Wp.u 2 4 : 1 Zp.u = 4. Ron = 4. Rsn = 40K Lp.d : e.g 2 : Wp.d 2 1 : 1 Zp.u = 1. Ron =1. Rsn = 10K

Pull up :pull down ratio = Zp.u : Zp.d

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= 4:1 Therefore on resistance from VDD to GND Ron = 50K

Lp.u : Wp.u 1 : 1 Zp.u =14. Ron =1. Rsp = 25K

Lp.d : Wp.d 1 :

Zp.u = 1. Ron =1. Rsn = 10K

The ratio rule does not apply and there is no static resistance from VDD to VSS

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Silicides

As the line width becomes smaller, the sheet resistance contribution to RC delay increases. Polysilicon sheet resistance ranges from 15 to 100 ohms Silicide has a resistance of 2 to 4 ohms Silicide is the refractory material formed by depositing metal on polysilicon and then sintering. This is used as interconnecting medium. Sputtering or evaporation

There are 3 way of depositing of metal

1.

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