B1: Study Of p-n Junction

Objectives: 1. To study the various characteristics of a p-n junction. 2. To determine the reverse saturation current I0 and material constant. 3. To determine the temperature coefficient of the junction voltage and the energy bandgap.

Apparatus: Study of p-n Junction Set, Oscilloscope, and Diode

Procedure: Part I: 1. The diode was connected that be tested to the terminals of the right side socket with the polarity as indicated. 2. The voltage and current readings showed on Display-2 and Display-1 was recorded respectively. 3. The current source was adjusted in steps from 100x10-6 A to 10x10-3A and step 2 was repeated.

Part II: 1. With the connections as in Part I, the OVEN and SENSOR leads was inserted into the respective sockets. 2. The diode was placed in the oven and its forward current was set to a low values(1mA). 3. The Display-1 was switched to TEMP mode and the oven temperature was recorded. 4. The oven temperature was varied from room temperature to about 360K in suitable steps and the junction voltage as shown in display-2 was recorded.

Part III: 1. The p-n junction was connected to the terminal of the left side socket. 2. The display-2 was setting to bias mode 3. The oscilloscope was connected to the CRO, the input and output voltage was measured for the particular bias and the frequency was setting. All reading was recorded.

PART III Base on the graph we can describe that the electrons from the negative source of voltage supply will enter a P region as valance electron. This valance electron will move from one hole to another toward the depletion region and finally form a negative ion. This will cause the depletion region to be wider and the majority carrier to decrease. The flow of valance electrons can be seen as holes that are attracted the negative source of voltage supply. When a depletion become wider, the majority carrier will decrease and the potential barrier will increase. Therefore, it is more difficult for majority carrier to cross the PN junction. As a result, the diffusion current is blocked stronger (resistance in the range of M) than in the unbiased condition.

Graph of Deplection Zone Capacitance,CD vs reverse bias voltage,V

deplection zone capacitance, CD (pF) 25 y = 1.5269x + 20.027 R = 0.8884 20 15 10 5 0 -7 -6 -5 -4 -3 -2 -1 0 voltage,V