California State Polytechnic University, Pomona Department of Electrical and Computer Engineering ECE 320 Quiz #1 ‘ae Determine the value Of Vise for a silicon NPN bipolar junction transistor having a base current of 10 wA, KT@=25.8-V To = 10 nA, 1=2. % (26.3mv Nam: Me 210 Mess 7 iS HIS), loxi6= roxid%(e ease) _\) . e 0x6 haw | ( joxi0* ° Vets JoK lO pre BES-ERIO Joxid on -» Vet gn [1Oxlo-, +) BSAA) oxo | oe 3 oxi g(aS-8XI5 al as ce 0.3509 VCalifornia State Polytechnic University, Pomona. Electrical and Computer Engineering Department ECE 320 Homework #1 Device Problems Nez For a silicon (Si) small signal transistor operating at 300K with a base to emitter junction diode reverse saturation current of 1 nanoAmpere and a measured voltage acrosa the base- emitter junction of 0.75 volts, find the current flowing through the junction. Show answer in milliamperes. \= For a ean (Ge) small signal diode operating at 300K w: a reverse saturation current of 0.1 nanoAmpere and 2 measured voltage across the diode of 0.35 volts, find the current flowing through the diode. show answer in millismperes. Transistor Biasing Configuration a: A bipolar junction silicon (Si) transistor is used in a common emitter (CE) configuration with an emitter resistor (Re). If the transistor has a B=50, the collector resistor (R.)is 10K ohms, the emitter resistor (Re) is 100 ohms, and the base bias resistor {Re)is 50K ohms, find the current in the base (Is), collector (Ic) and emitter (Ig) circuit paths. Circuit Models 4. For the transistor circuit described in problem 3, draw the ac sma gnal hybrid circuit model. Assume hye = 1.1 K ohms, hee = 2.5 x 10-4, and hoe = 25 microAmperes per volt. > {.leo2 x16."* v ~2 w= 1. B8x1o 31K