Chapter 1

Exercise Problems

EX1.1
⎛ − Eg ⎞
ni = BT 3 / 2 exp ⎜ ⎟
⎝ 2kT ⎠
⎛ −1.4 ⎞
GaAs: ni = ( 2.1× 1014 ) ( 300 )
3/ 2
exp ⎜ ⎟ or ni = 1.8 × 106 cm −3
⎜ 2 ( 86 × 10−6 ) ( 300 ) ⎟
⎝ ⎠
⎛ −0.66 ⎞
Ge: ni = (1.66 × 1013 ) ( 300 )
3/ 2
exp ⎜ ⎟ or ni = 2.40 × 1013 cm −3
⎜ 2 ( 86 × 10−6 ) ( 300 ) ⎟
⎝ ⎠

EX1.2
(a) majority carrier: holes, po = 1017 cm −3 minority carrier: electrons,

n 2 (1.5 × 10 )
10 2

no = i = = 2.25 × 103 cm −3
po 1017
(b) majority carrier: electrons, no = 5 × 1015 cm −3 minority carrier: holes,

n 2 (1.5 × 10 )
10 2

po = i = = 4.5 × 104 cm −3
no 5 × 1015

EX1.3
For n-type, drift current density J ≅ eμn nE or 200 = (1.6 × 10−19 ) ( 7000 ) (1016 ) E which yields
E = 17.9 V / cm

EX1.4
Diffusion current density due to holes:
dp
J p = −eD p
dx
⎛ −1 ⎞ ⎛ −x ⎞
= −eD p (1016 ) ⎜ ⎟ exp ⎜ ⎟
⎜L ⎟ ⎜L ⎟
⎝ p⎠ ⎝ p⎠
(a) At x = 0

Jp =
(1.6 ×10 ) (10 ) (10 ) = 16 A / cm
−19 16
2

10−3
−3
(b) At x = 10 cm
⎛ −10−3 ⎞
J p = 16 exp ⎜ −3 ⎟ = 5.89 A / cm 2
⎝ 10 ⎠

EX1.5
⎡N N ⎤ ⎡ (1016 )(1017 ) ⎤
Vbi = VT ln ⎢ a 2 d ⎥ = ( 0.026 ) ln ⎢ ⎥ or Vbi = 1.23 V
⎣ (1.8 × 10 ) ⎦
⎣ ni ⎦ ⎢ 6 2 ⎥

EX1.6
−1/ 2
⎛ V ⎞
C j = C jo ⎜1 + R ⎟
⎝ Vbi ⎠
and
 ⎡N N ⎤
Vbi = VT ln ⎢ a 2 d ⎥
⎣ ni ⎦
⎡ (1017 )(1016 ) ⎤
= ( 0.026 ) ln ⎢ ⎥ = 0.757 V
⎢ (1.5 × 1010 )2 ⎥
⎣ ⎦
−1/ 2
⎛ 5 ⎞
= C jo ( 7.61)
−1/ 2
Then 0.8 = C jo ⎜ 1 + ⎟
⎝ 0.757 ⎠
or
C jo = 2.21 pF

EX1.7
⎡ ⎛v ⎞ ⎤
iD = I S ⎢exp ⎜ D ⎟ − 1⎥
⎣⎢ ⎝ VT ⎠ ⎥⎦
⎡ ⎛ v ⎞ ⎤
so 10−3 = (10−13 ) ⎢ exp ⎜ D ⎟ − 1⎥
⎣ ⎝ 0.026 ⎠ ⎦
⎡ 10−3 ⎤
Solving for the diode voltage, we find vD = ( 0.026 ) ln ⎢ −13 + 1⎥
⎣10 ⎦
or
vD ≅ ( 0.026 ) ln (1010 )
which yields
vD = 0.599 V

EX1.8
⎛V ⎞
VPS = I D R + VD and I D ≅ I S exp ⎜ D ⎟
⎝ VT ⎠
( 4 − VD )
so 4 = I D ( 4 ×103 ) + VD ⇒ I D =
4 ×103
and
⎛ V ⎞
I D = (10 −12 ) exp ⎜ D ⎟
⎝ 0.026 ⎠
By trial and error, we find I D ≅ 0.864 mA and VD ≅ 0.535 V

EX1.9
VPS − Vγ 5 − 0.7
(a) ID = = ⇒ I D = 1.08 mA
R 4
VPS − Vγ VPS − Vγ
(b) ID = ⇒R=
R ID
8 − 0.7
Then R = = 6.79 kΩ
1.075
(c)
ID(mA)
Diode curve
1.25
1.08 Load lines

(b)

(a)

0 0.7 2 4 6 8
VD(v)

EX1.10
PSpice analysis

EX1.11
VPS − Vγ 10 − 0.7
Quiescent diode current I DQ = = = 0.465 mA
R 20
Time-varying diode current:
V 0.026
We find that rd = T = = 0.0559 kΩ
I DQ 0.465
vI 0.2sin ω t (V )
Then id = = ⋅ or id = 9.97sin ω t ( μ A)
rd + R 0.0559 + 20 ( kΩ )

EX1.12
⎛I ⎞ ⎛ 1.2 × 10−3 ⎞
For the pn junction diode, VD ≅ VT ln ⎜ D ⎟ = ( 0.026 ) ln ⎜ −15 ⎟
or VD = 0.6871 V
⎝ IS ⎠ ⎝ 4 × 10 ⎠
The Schottky diode voltage will be smaller, so VD = 0.6871 − 0.265 = 0.4221 V
⎛V ⎞
Now I D ≅ I S exp ⎜ D ⎟
⎝ VT ⎠
or
1.2 × 10−3
IS = ⇒ I S = 1.07 × 10−10 A
⎛ 0.4221 ⎞
exp ⎜ ⎟
⎝ 0.026 ⎠

EX1.13
P = I ⋅ VZ ⇒ 10 = I ( 5.6 ) ⇒ I = 1.79 mA
10 − 5.6
Also I = = 1.79 ⇒ R = 2.46 kΩ
R

Test Your Understanding Exercises

TYU1.1
(a) T = 400K
⎛ − Eg ⎞
Si: ni = BT 3 / 2 exp ⎜ ⎟
⎝ 2kT ⎠
⎡ −1.1 ⎤
ni = ( 5.23 × 1015 ) ( 400 )
3/ 2
exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10 ) ( 400 ) ⎥⎦
−6

or
ni = 4.76 × 1012 cm −3
 ⎡ −0.66 ⎤
Ge: ni = (1.66 × 1015 ) ( 400 )
3/ 2
exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10 ) ( 400 ) ⎥⎦
−6

or
ni = 9.06 × 1014 cm −3
GaAs:
⎡ −1.4 ⎤
ni = ( 2.1× 1014 ) ( 400 )
3/ 2
exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10 ) ( 400 ) ⎥⎦
−6

or
ni = 2.44 × 109 cm −3
(b) T = 250 K
⎡ −1.1 ⎤
Si: ni = ( 5.23 × 1015 ) ( 250 )
3/ 2
exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10−6 ) ( 250 ) ⎥⎦
or
ni = 1.61× 108 cm −3
⎡ −0.66 ⎤
Ge: ni = (1.66 × 1015 ) ( 250 )
3/ 2
exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10 ) ( 250 ) ⎥⎦
−6

or
ni = 1.42 × 1012 cm −3
⎡ −1.4 ⎤
GaAs: ni = ( 2.10 × 1014 ) ( 250 )
3/ 2
exp ⎢ ⎥
⎢⎣ 2 ( 86 × 10−6 ) ( 250 ) ⎥⎦
or
ni = 6.02 × 103 cm −3

TYU1.2
(a) n = 5 × 1016 cm −3 , p <<< n, so σ ≅ eμ n n = (1.6 × 10 −19 ) (1350 ) ( 5 × 1016 )
or
σ = 10.8 ( Ω − cm )
−1

(b) p = 5 × 1016 cm −3 , n <<< p, so σ ≅ eμ p p = (1.6 × 10−19 ) ( 480 ) ( 5 × 1016 )

or
σ = 3.84 ( Ω − cm )
−1

TYU1.3
J = σ E = (10 )(15 ) or J = 150 A / cm2

TYU1.4
Δn ⎛ 1015 − 1016 ⎞
(a) J n = eDn
dn
= eDn (
so J n = 1.6 × 10−19 ( 35 ) ⎜ )
−4 ⎟
dx Δx ⎝ 0 − 2.5 × 10 ⎠
or
J n = 202 A / cm 2
Δp ⎛ 1014 − 5 × 1015 ⎞
(b) J p = −eD p
dp
= −eD p (
so J p = − 1.6 × 10−19 (12.5 ) ⎜ )
−4 ⎟
dx Δx ⎝ 0 − 4 × 10 ⎠
or
J p = −24.5 A / cm2

TYU1.5
(a) no = N d = 8 × 1015 cm −3

n 2 (1.5 × 10 )
10 2

po = i = = 2.81× 10 4 cm −3
no 8 × 1015

(b) n = no + δ n = 8 × 1015 + 0.1× 1015

or
n = 8.1×1015 cm−3
p = po + δ p = 2.81 × 10 4 + 1014
or
p ≅ 1014 cm −3

TYU1.6
⎡N N ⎤ ⎡ (1015 )(1017 ) ⎤
(a) Vbi = VT ln ⎢ a 2 d ⎥ so Vbi = ( 0.026 ) ln ⎢ ⎥ = 0.697 V
⎣ ni ⎦ ⎢ (1.5 × 1010 )2 ⎥
⎣ ⎦
⎡ (1017 )(1017 ) ⎤
(b) Vbi = ( 0.026 ) ln ⎢ ⎥ = 0.817 V
⎢ (1.5 × 1010 )2 ⎥
⎣ ⎦

TYU1.7
⎡ ⎛V ⎞ ⎤
(a) I D = I S ⎢exp ⎜ D ⎟ − 1⎥
⎣⎢ ⎝ VT ⎠ ⎦⎥
⎛ 0.5 ⎞
I D ≅ 10−14 exp ⎜ ⎟
⎝ 0.026 ⎠
Then, for
VD = 0.5 V, I D = 2.25 μ A
VD = 0.6 V, I D = 0.105 mA
VD = 0.7 V, I D = 4.93 mA
(b) I D ≅ − I S = −10 −14 A
for both cases.

TYU1.8
ΔT = 100C so ΔVD ≅ 2 × 100 = 200 mV
Then VD = 0.650 − 0.20 = 0.450 V

TYU1.9
ID(mA)
VD ID
Diode
0.45 0.033
1.0 0.50 0.225
艐0.87 0.55 1.54
Load line

0 1 2 3 4
艐0.54v VD(v)

TYU1.10
P = I DVD ⇒ 1.05 = I D ( 0.7 ) so I D = 1.5 mA
 VPS − Vγ 10 − 0.7
Now R = = ⇒ R = 6.2 kΩ
ID 1.5

TYU1.11
I 0.8
gd = D = = 30.8 mS
VT 0.026

TYU1.12
V 0.026 0.026
rd = T ⇒ 50 = ⇒ ID =
ID ID 50
or
I D = 0.52 mA

TYU1.13
For the pn junction diode,
4 − 0.7
ID = = 0.825 mA
4
4 − 0.3
For the Schottky diode, I D = = 0.925 mA
4

TYU1.14
Vz = Vzo + I z rz ⇒ Vzo = Vz − I z rz so Vzo = 5.20 − (10 −3 ) ( 20 ) = 5.18 V
Then Vz = 5.18 + (10 × 10−3 ) ( 20 ) ⇒ Vz = 5.38 V