MOSFET parameters

Body Effect, Early Effect

Small signal parameters,
 Other Effects
• Parameters
γ - Body effect parameter
λ - Drain Modulation- Early Effect
– b – Mobility ratio
 Equations Again
• VGB = φMS + ΨS + Vox (1)
• QG(x) + Qox + QB + Qch(x) = 0 (2)
• In MOSFET:
• VGB = VGS + VSB = φMS + ΨS(x) + Vox (x)
• Vox(x) = (QG(x)/Cox) = - (Qox + QB + Qch(x) )/Cox
• ψS(x) = 2ψB + V(x) = 2ψB + VSB + Vch(x)
• 2ψB + VSB = q NA wmax2/(2εS)
• QB = qNAwmax = [2qNAεS(2ψB + VSB)]1/2
• VGB = φMS + 2ψB + VSB + Vch(x) - (Qox + QB + Qch(x) )/Cox
 MOSFET Threshold Voltage
• QB = qNAwmax = [2qNAεS(2ψB + VSB)]1/2 …………….. (1)
• VGB = φMS + 2ψB + VSB + Vch(x) - (Qox + QB + Qch(x) )/Cox ……
(2)
• VGB = [φMS – Qox/Cox] + [2ψB + VSB] + Vch(x) - (QB + Qch(x) )/Cox …(3)
• VGB = VGS + VSB
• VGB = VFB + [2ψB + VSB] + Vch(x) - ( QB + Qch(x) )/Cox
• Case 1: VSB = 0, x = 0, Qch(0) = 0; => VGS = VTh0
• VGB = VTh0 = VFB + 2ψB + [2qNAεS(2ψB)]1/2 /Cox ……………. (4)
• Case 1a: VSB = 0, Qch(x) > 0; => VGS > VTh0
• VGS - VTh0 - Vch(x) = – Qch(x)/Cox
 MOSFET CURRENT
• Case 1b: VSB = 0, Qch(x) > 0 for 0 < x < L; VGS > VTh0
• Complete Channel
• IDS = µCox(W/L)([VGS – VTh0] VDS - 1/2 VDS2)
• Case 1c:
• VSB = 0, Qch(x) = 0 for x < L; VGS > VTh0
• Qch(x) = - Cox(VGS - VTh0 - Vch(x))
• At x = L' Qch(L' ) = 0
• Vch(L') = (VGS - VTh0) = VDSAT

• IDS = ½ µCox(W/L)([VGS – VTh0]2

 Body Effect Parameter
• Case 2: VSB ≠ 0, x = 0, Qch(0) = 0; => VGS = VTh
• VGB = VGS + VSB = VFB + [2ψB + VSB] + [2qNAεS(2ψB + VSB)]1/2 /Cox
• VTh = VFB + [2ψB] + [2qNAεS(2ψB + VSB)]1/2 /Cox ……(5)
• Δ VTh = [2qNAεS(2ψB + VSB)]1/2 /Cox - [2qNAεS(2ψB)]1/2 /Cox

• VTh = VFB + [2ψB] + [2qNAεS(2ψB + VSB)]1/2 ……(5)

• Δ VTh = [2qNAεS(2ψB + VSB)]1/2 - [2qNAεS(2ψB)]1/2
 MOSFET CURRENT
• Case 2b: VSB ≠ 0, Qch(x) > 0 for 0 < x < L; VGS > VTh
• Complete Channel
• IDS = Cox(W/L)([VGS – VTh] VDS - 1/2 VDS2)
• Case 2c:
• VSB ≠ 0, Qch(x) = 0 for x < L; VGS > VTh
• Qch(x) = - Cox(VGS - VTh - Vch(x))
• Incomplete Channel
• At x = L' Qch(L' ) = 0
• Vch(L') = (VGS - VTh) = VDSAT
• IDS = ½ µCox(W/L)([VGS – VTh]2
 Small Signal Parameters
• In Saturation
• IDS = ½ µCox(W/L)([VGS – VTh]2
• ΔIDS = gm ΔVGS + gmb ΔVSB + gds ΔVDS
• gm = µCox(W/L) (VGS – VTh)
• gmb = µCox(W/L) (VGS – VTh)[∂VTh/∂VSB]
• VTh = VFB + [2ψB] + [2qNAεS(2ψB + VSB)]1/2/Cox ……(5)
• [∂VTh/∂VSB] = ½ [2qNAεS ]1/2/Cox(2ψB + VSB)-1/2
• γ = [2qNAεS ]1/2/Cox
• gmb = ½ gm γ (2ψB + VSB)-1/2
 Early Effect
• Saturation
• IDS = ½ µCox(W/ L') [VGS – VTh]2
• L' = L – ΔL = L ( 1 - ΔL/L) ≈ L ( 1 + ΔL/L)-1
• IDS = ½ µCox(W/ L)[VGS – VTh]2( 1 + ΔL/L)
• ΔL/L ≈ λ VDS = VDS/VEA
• VEA = Early Voltage => Point on –x axis where IDSAT
converges for different V when extrapolated.
• IDS = ½ µCox(W/ L)[VGS – VTh]2( 1 + λ VDS)
• gds = ∂IDS/∂VDS ≈ IDS / VEA