Q.

1 Determine the value of Fermi energy for an energy KT above the

Fermi energy.

Ans. 1: Given E=E
F
+kT

So E-E
F
= kT











= 0.269


1
( )
exp 1
F
F E
E E
kT
=

| |
+
|
\ .
1
exp 1
kT
kT
| |
+
|
\ .
1
1 e
=
+
Q.2 Determine the temperature at which the probability that an energy
state with an energy 0.1 eV above the Fermi level will be occupied by
an electron is 5%.

Ans. 2: Given F(E)=5% and E=E
F
+0.1




Let so

By solving x = 2.94

Or 0.1/kT = 2.94 because E=E
F
+0.1

kT=0.034 eV=0.034 1.6 10
-19
J

So T=(0.034 1.6 10
-19
)/1.38 10
-23
K
1 5
( ) 0.05
100
exp 1
F
F E
E E
kT
= = =

| |
+
|
\ .
F
E E
x
kT

=
0.05 exp( ) 0.05 1 x + =
Q.3 The Fermi energy of copper is 7 eV. Calculate (a) the Fermi
momentum of electron in copper, (b) the de Broglie wavelength of the
electron and (c) the Fermi velocity.

Ans.3 Given E
F
= 7 eV = 71.6 10
-19
J


Where p is the momentum of the electron.

So the Fermi momentum


And


The Fermi velocity is
2
2
F
p
E
m
=
1/ 2
(2 )
F F
p mE =
31 19
(2 9.1 10 7 1.6 10 )

=
25
14.28 10 kg m

=
F
h
p
=
34
10
25
6.626 10
4.64 10
14.28 10
m

= =

F
F
p
v
m
=
25
6
31
14.28 10
1.57 10 /
9.1 10
m s

= =

Q.4 For intrinsic semiconductor with gap width E

g
= 0.7eV, determine
the density of holes and electrons at 300 K.

Ans.4 The concentration of intrinsic charge carriers is

N
i
= 2 [2kT/h
2
]
3/2
(m*
h
m
e
*)
3/4
exp{- E
g
/kT}; m*
h
= m
e
* = m

N
i
= 2 [2kTm/h
2
]
3/2
exp{- E
g
/kT}

After calculating 2 [2kTm/h
2
]
3/2
= 4.83 10
21
, at T = 300K, E
g
=
0.7eV,

and kT = 0.025eV

thus, N
i
= 4.83 10
21
(300)
3/2
exp(-0.7/0.025) = 3.5 10
19
/m
3