S9011

S9011
FEATURE Power dissipation PCM:

TRANSISTOR (NPN)

TO-92
1. EMITTER

2. BASE

0.31

W (Tamb=25)

3. COLLECTOR

Collector current ICM: 0.03 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: -55 to +150 unless otherwise specified)
Test conditions MIN 30 20 4 TYP

1 2 3

ELECTRICAL CHARACTERISTICS (Tamb=25

Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICBO IEBO hFE(1) VCE(sat) VBE(sat)

MAX

UNIT V V V

Ic= 100A, IE=0 IC= 0.1mA , IB=0 IE= 100A, IC=0 VCB=16V, IE=0 VCB=16V, IE=0 VEB= 3.5V, IC=0 VCE=5V, IC=1mA IC= 10 mA, IB= 1mA IC= 10 mA, IB= 1mA VCE=5V, IC=1mA, f=30MHz

0.1 0.1 0.1 28 270 0.3 1

A A A

V V

Transition frequency

fT

150

MHz

CLASSIFICATION OF hFE(1)
Rank Range D 28-45 E 39-60 F 54-80 G 72-108 H 97-146 I 132-198 J 180-270

WEJ ELECTRONIC CO.

Http:// www.wej.cn

E-mail:wej@yongerjia.com