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Venkatesh Prasad: Day 4 Latchup, ESD & Antenna
Venkatesh Prasad: Day 4 Latchup, ESD & Antenna
01/07/09
WhatisLatchup?
ItisafailuremechanismofCMOSintegratedcircuitscharacterized byexcessivecurrentdraincoupledwithfunctionalfailure, parametricfailureand/ordevicedestruction. Thecauseofthelatchupexistsinalljunctionsisolatedorbulk CMOSprocesses:parasiticPNPNpaths.
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Latchup
in Vdd
out
p+ n+ n+ P+ Nwell p+ n+
GND
Vdd
Rsub T1
T1
Rsub
T2
Rwell
vsub
Substratetap
T2
Well tap
Psubstrate
Rwell
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Conditionwhicharenecessaryfor latchuptooccur
Bothparasiticbipolarmustbebiasedintotheactivestate. Theproductoftheparasiticbipolartransitioncurrentgainmustbe sufficienttoallowregeneration.i.e.,greaterthanorequaltoone. Theterminalnetworkmustbecapableofsupplyingacurrentgreater thantheholdingcurrentrequiredbythePNPNpath.
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Guidelinestoavoidlatchup
Everywellshouldhaveatleastonetap. Allsubstrateandwelltapsshouldconnectdirectlytotheappropriate supplyinmetal. nMOStransistorsshouldbeclusteredtogethernearGNDand pMOStransistorsshouldbeclusteredtogethernearVDD,avoiding convolutedstructuresthatintertwinenMOSandpMOStransistorsin checkboardpatterns.
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ESD
Itcanoccurwhenthechargesstoredinmachinesorthehumanbody aredischargedtothechiponcontactorbystaticinduction. DifferentmodelsforESDtesting 1.HBMHumanBodyModel 2.MMMachineModel 3.CDMChargeDeviceModel
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HumanBodyModelHBM
1Mohms 1.5kohms
Vesd
100pf
DUT
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MachineModelMM
1Mohms
Vesd
200pf
DUT
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ChargeDeviceModelCDM
1Gohms
DUT
Charging supply
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AntennaEffect
Metallayer gate D S
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MetalSplittingorLayerJumping
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MetalSplittingorLayerJumping
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Electromigration
Highcurrentdensitiesleadtoanelectronwindthatcauses metalatomstomigrateovertime. Electromigrationdependsonthecurrentdensity,J=I/(w.t) Theelectromigrationcurrentslimitsvarywithmaterials, processing,desiredmeantimetofailureandobtainedfromthe fabricationvendor.
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