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    Tim5867 30ul

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    mehran_eftekhar
    This document provides technical specifications for a GaAs FET microwave semiconductor called the TIM5867-30UL. It has a high output power of 45 dBm and gain of 10 dB between 5.85-6.75 GHz. It has a broad bandwidth and is internally matched with a hermetically sealed package. The document lists key RF performance specifications, electrical characteristics, and maximum ratings for the device, including output power, gain, current, voltage, and temperature specifications. It also provides a package outline diagram and handling precautions.

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    Tim5867 30ul

    Uploaded by

    mehran_eftekhar
    16 views2 pages
    This document provides technical specifications for a GaAs FET microwave semiconductor called the TIM5867-30UL. It has a high output power of 45 dBm and gain of 10 dB between 5.85-6.75 GHz. It has a broad bandwidth and is internally matched with a hermetically sealed package. The document lists key RF performance specifications, electrical characteristics, and maximum ratings for the device, including output power, gain, current, voltage, and temperature specifications. It also provides a package outline diagram and handling precautions.

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    TIM5867-30UL

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    This document provides technical specifications for a GaAs FET microwave semiconductor called the TIM5867-30UL. It has a high output power of 45 dBm and gain of 10 dB between 5.85-6.75 GHz. It has a broad bandwidth and is internally matched with a hermetically sealed package. The document lists key RF performance specifications, electrical characteristics, and maximum ratings for the device, including output power, gain, current, voltage, and temperature specifications. It also provides a package outline diagram and handling precautions.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    16 views2 pages

    Tim5867 30ul

    Uploaded by

    mehran_eftekhar
    This document provides technical specifications for a GaAs FET microwave semiconductor called the TIM5867-30UL. It has a high output power of 45 dBm and gain of 10 dB between 5.85-6.75 GHz. It has a broad bandwidth and is internally matched with a hermetically sealed package. The document lists key RF performance specifications, electrical characteristics, and maximum ratings for the device, including output power, gain, current, voltage, and temperature specifications. It also provides a package outline diagram and handling precautions.

    Copyright:

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    of 2

    MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR

    TIM5867-30UL
    Preliminary

    TECHNICAL DATA FEATURES


    HIGH POWER P1dB=45.0 dBm at 5.85GHz to 6.75GHz HIGH GAIN G1dB=10.0dB at 5.85GHz to 6.75GHz

    BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE

    RF PERFORMANCE SPECIFICATIONS
    CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 Tch IDS1 G G1dB SYMBOL P1dB

    ( Ta= 25C )
    UNIT dBm MIN. 44.0 9.0 -44 TYP. MAX. 45.0 10.0 7.0 41 -47 7.0 8.0 0.8 8.0 100

    CONDITIONS

    VDS= 10V IDSset=6.4A

    dB A dB %

    f = 5.85 to 6.75GHz

    add
    IM3 Two-Tone Test Po=34.0 dBm
    (Single Carrier Level)
    (VDS X IDS + Pin P1dB) X Rth(c-c)

    dBc A C

    Recommended gate resistance(Rg) : Rg= 28 (MAX.)

    ELECTRICAL CHARACTERISTICS
    CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL

    ( Ta= 25C )
    UNIT S V A V C/W MIN. -0.5 -5 TYP. 8.0 -2.0 16.0 1.0 MAX. -3.0 1.5

    CONDITIONS VDS= 3V IDS= 10.0A VDS= 3V IDS= 80mA VDS= 3V VGS= 0V IGS=-240A Channel to Case

    gm
    VGSoff IDSS VGSO Rth(c-c)

    The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product.

    May 2009

    TIM5867-30UL

    ABSOLUTE MAXIMUM RATINGS


    CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage

    ( Ta= 25C )
    SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 18.0 100 175 -65 to +175

    PACKAGE OUTLINE (7-AA05A)


    Unit in mm Gate Source Drain

    HANDLING PRECAUTIONS FOR PACKAGE MODEL


    Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C.

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