MITSUBISHI TRANSISTOR MODULES

QM50TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE

QM50TX-H

IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271

APPLICATION AC motor controllers, UPS, DC motor controllers, NC equipment, Welders

OUTLINE DRAWING & CIRCUIT DIAGRAM

Dimensions in mm

68

11M4

B1

B3

B5

P(+)

B3

B5

20

10.5

14

62.5

74

14

86

B1 B2

(P)

U B2 B4

V B6

B6

B4

20

(N)

(10) 18.5

13

13

24.8 26

LABEL

28.2

18.5 80 94

N()

18.5

18.5 (10)

45.4

Note: All Transistor Units are Darlingtons.

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM50TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS

Symbol VCEX (SUS) VCEX VCBO VEBO IC IC PC IB ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage

(Tj=25C, unless otherwise noted)

Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 40~+150 40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 520 Unit V V V V A A W A A C C V Nm kgcm Nm kgcm g

Mounting torque Mounting screw M5

Weight

Typical value

ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

(Tj=25C, unless otherwise noted)

Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=0.65A IC=50A (diode forward voltage) IC=50A, VCE=2V/5V Min. 75/100 VCC=300V, IC=50A, IB1=IB2=1A Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) Typ. Max. 1.0 1.0 200 2.0 2.5 1.75 1.5 12 3.0 0.4 1.3 0.2 Unit mA mA mA V V V s s s C/ W C/ W C/ W

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM50TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE

PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
100 Tj=25C IB=1A 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0

DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)

VCE=5.0V

COLLECTOR CURRENT IC (A)

IB=0.65A IB=0.3A

80

DC CURRENT GAIN hFE

VCE=2.0V

60

IB=0.2A
IB=0.1A

40

20

Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2

COLLECTOR-EMITTER VOLTAGE

VCE (V)

COLLECTOR CURRENT IC (A)

VCE (sat), VBE (sat) (V)

COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)

10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 1 1.2 1.6 2.0 2.4 2.8 3.2 VCE=2.0V Tj=25C

SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)

101 7 5 4 3 2

BASE CURRENT IB (A)

VBE(sat)

SATURATION VOLTAGE

10 0 7 VCE(sat) 5 4 3 IB=0.65A 2 Tj=25C Tj=125C 1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2

BASE-EMITTER VOLTAGE

VBE (V)

COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5
Tj=25C Tj=125C

SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)

2

ton, ts, tf (s)

3
IC=50A

SWITCHING TIME

10 1 7 5 4 3 2

ts VCC=300V IB1=IB2=1A

1
IC=20A IC=30A

0 10 2

2 3 4 5 7 10 1

2 3 4 5 7 10 0

10 0 7 5 4 3 2 10 0

ton tf Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2

BASE CURRENT IB (A)

COLLECTOR CURRENT

IC (A)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM50TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE

SWITCHING TIME VS. BASE CURRENT (TYPICAL)

VCC=300V 2 IB1=1A IC=50A ts 10 1 7 5 4 3 2 tf 10 0 7 5 4 3 101 Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1 3

REVERSE BIAS SAFE OPERATING AREA

160

COLLECTOR CURRENT IC (A)

ts, tf (s)

140 120

Tj=125C

IB2=1A 100 80 60 40 20 0 0 200 400 600 800 3A 5A 10A

SWITCHING TIME

BASE REVERSE CURRENT IB2 (A)

COLLECTOR-EMITTER VOLTAGE

VCE (V)

FORWARD BIAS SAFE OPERATING AREA

10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 TC=25C NON-REPETITIVE 1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3

DERATING FACTOR OF F. B. S. O. A.
100 90 SECOND BREAKDOWN AREA

COLLECTOR CURRENT IC (A)

10
DC

50 10 0 0 s s

DERATING FACTOR (%)

COLLECTOR-EMITTER VOLTAGE

COLLECTOR REVERSE CURRENT IC (A)

TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 0.5

0.4

1m s

80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION

80 100 120 140 160

VCE (V)

CASE TEMPERATURE

TC (C)

Zth (jc) (C/ W)

10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0

REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)

0.3

0.2

0.1 0 10 3 2 3 4 5 7 10 2 2 3 4 5 7 10 1 2 3 4 5 7 10 0

Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4

0.4

TIME (s)

COLLECTOR-EMITTER REVERSE VOLTAGE VCEO (V)

Feb.1999

MITSUBISHI TRANSISTOR MODULES

QM50TX-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE

RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT ICSM (A)
500

REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL)

10 2 7 VCC=300V 5 IB1=IB2=1A 3 2 10 2 Tj=25C Tj=125C

400

Irr (A), Qrr (c)

200

100

0 10 0

2 3 4 5 7 10 1

2 3 4 5 7 10 2

10 0 10 0 Qrr 7 5 3 trr 2 10 1 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3

CONDUCTION TIME (CYCLES AT 60Hz)

FORWARD CURRENT IF (A)

TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2.0

1.6

Zth (jc) (C/ W)

1.2

0.8

0.4 0 10 3 2 3 4 5 710 2 2 3 4 5 710 1 2 3 4 5 7 10 0

TIME (s)

Feb.1999

trr (s)

300

10 1 7 5 3 2

10 1 Irr

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