SEMICONDUCTOR TIP35C

TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION.

A Q B
K
FEATURES

F
I
ᴌRecommended for 75W Audio Frequency

E
Amplifier Output Stage.

C
DIM MILLIMETERS
ᴌComplementary to TIP36C. A 15.9 MAX

J
H
B 4.8 MAX
ᴌIcmax:25A. C _ 0.3
20.0 +

G
D _ 0.3
2.0 +
D d 1.0+0.3/-0.25
E 2.0

L
F 1.0
G 3.3 MAX
d
H 9.0
MAXIMUM RATING (Ta=25ᴱ) I 4.5
P P T M J 2.0
CHARACTERISTIC SYMBOL RATING UNIT K 1.8 MAX
L _ 0.5
20.5 +
Collector-Base Voltage VCBO 100 V M 2.8
P _ 0.2
5.45 +
Collector-Emitter Voltage VCEO 100 V 1 2 3 Q Φ3.2 + _ 0.2
T 0.6+0.3/-0.1
Emitter-Base Voltage VEBO 5 V 1. BASE
2. COLLECTOR
Collector Current IC 25 A 3. EMITTER

Base Current IB 5.0 A

Collector Power Dissipation
PC 125 W TO-3P(N)
(Tc=25ᴱ)
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=100V, IE=0 - - 10 ỌA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 10 ỌA
Collector-emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 100 - - V
hFE(1) (Note) VCE=5V, IC=1.5A 55 - 160
DC Current Gain
hFE(2) VCE=4V, IC=15A 15 - -
VCE(sat)(1) IC=15A, IB=1.5A - - 1.8
Collector-Emitter Saturation Voltage V
VCE(sat)(2) IC=25A, IB=5.0A - - 4.0
Base-Emitter Voltage VBE VCE=5V, IC=5A - - 1.5 V
Transition Frequency fT VCE=5V, IC=1A 3.0 - - MHz
Note : hFE(1) Classification R:55~110, O:80~160

2001. 1. 18 Revision No : 3 1/2

 TIP35C

SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS

2 10
T J =25 C
1 5 VCC =30V
I C /I B =10
0.5 3
I B1 =I B2
0.3 tr
TIME t (µS)

TIME t (µS)
t stg
1
0.1
0.5
0.05 t d(on)
T J =25 C 0.3
0.03 tf
I C /I B =10
VCC =30V
0.01 0.1
0.3 0.5 1 3 5 10
3 0 0.3 0.5 1 3 5 10 30

COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)

h FE - I C REVERSE BIAS SAFE OPERATING AREA

1K 30
VCE =4.0V < 100 C
TJ =
COLLECTOR CURRENT I C (A)

500 T J =25 C
25
DC CURRENT GAIN h FE

300
20

100 15

50 10
30
5

10 0
0.2 0.5 1 3 5 10 30 0 20 40 60 80 100 120

COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V)

FORWARD BIAS SAFE OPERATING AREA

P D - Tc
100
150
50 I C MAX.(PULSED)*
POWER DISSIPATION PD (W)

30 10mS*
COLLECTOR CURRENT I C (A)

125 1.0mS*
I C MAX 300µS*
(CONTINUOUS) DC
100 10 OP
Tc ERA
5 =2 TI
75 5 ON
C
3
50
1
25 * SINGLE NONREPETITIVE
0.5
PLUSE Ta=25 C
0.3 CURVES MUST BE DERATED
0
LINEARLY WITH INCREASE
0 25 50 75 100 125 150 IN TEMPERATURE
0.1
CASE TEMPERATURE Tc ( C) 1 3 5 10 30 50 100 200

COLLECTOR-EMITTER VOLTAGE V CE (V)

2001. 1. 18 Revision No : 3 2/2

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