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2SC5271

Silicon NPN Triple Diffused Planar Transistor

VCEO

200

IEBO

VEBO

V(BR)CEO

5(Pulse10)

hFE1

IC

VCB=300V

100max

VEB=7V

100max

IC=10mA

200min

VCE=2V, IC=2.5A

10 to 30

IB

hFE2

VCE=2V, IC=1mA

15min

PC

30(Tc=25C)

VCE(sat)

IC=2.5A, IB=0.5A

1.0max

Tj

150

VBE(sat)

IC=2.5A, IB=0.5A

1.5max

55 to +150

fT

VCE=12V, IE=0.5A

10typ

MHz

COB

VCB=10V, f=1MHz

45typ

pF

Tstg

4.20.2
2.8 c0.5

3.30.2

a
b

1.350.15
1.350.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54

2.54

2.40.2

2.20.2

Typical Switching Characteristics (Common Emitter)


VCC
(V)

RL
()

IC
(A)

VBB1
(V)

VBB2
(V)

IB1
(A)

IB2
(A)

ton
(s)

tstg
(s)

tf
(s)

150

60

2.5

10

0.5

1.0

0.3max

1.0max

0.1max

132

10.10.2

4.00.2

ICBO

External Dimensions FM20(TO220F)

0.80.2

Unit

0.2

300

2SC5271

3.9

VCBO

(Ta=25C)

Conditions

8.40.2

Symbol

Unit

16.90.3

Electrical Characteristics

2SC5271

Symbol

13.0min

Absolute maximum ratings (Ta=25C)

Application : Resonant Switching Regulator and General Purpose

B C E

Weight : Approx 2.0g


a. Type No.
b. Lot No.

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