B-10

01/99

2N4220, 2N4220A, 2N4221, 2N4221A, 2N4222, 2N4222A

N-Channel Silicon Junction Field-Effect Transistor

Mixers Oscillators VHF Amplifiers Small Signal Amplifiers
Absolute maximum ratings at TA = 25C
Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating (to 150 C)

30 V 10 mA 300 mW 2 mW/C

At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Voltage Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics Common Source Forward Transconductance Common Source Forward Transmittance Common Source Output Conductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance Noise Figure 2N4220A, 2N4221A, 2N4222A gfs | Yfs | gos Ciss Crss NF V(BR)GSS IGSS VGS VGS(OFF) IDSS

2N4220 2N4220A NJ16 Min 30 0.1 0.1 0.5 (50) 0.5 Max

2N4221 2N4221A NJ16 Min 30 0.1 0.1 Max

2N4222 2N4222A NJ32 Min 30 0.1 0.1 Max Unit V nA A V A V mA

Process Test Conditions IG = 1A, VDS = V VGS = 15V, VDS = V VGS = 15V, VDS = V VDS = 15V, ID = ( ) VDS = 15V, ID = 0.1 nA VDS = 15V, VGS = V TA = 150C

2.5 1 5 2 6 (50) (200) (200) (500) (500) 4 3 2 6 6 5 8 15

1000 750

4000

2000 750

5000

2500 750

6000

S S

VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V VDS = 15V, VGS = V RG = 1 M

f = 1 kHz f = 100 MHz f = 1 kHz f = 1 MHz f = 1 MHz f = 100 MHz

10 6 2 2.5

20 6 2 2.5

40 6 2 2.5

S pF pF dB

TO72 Package
Dimensions in Inches (mm)

Pin Configuration
1 Source, 2 Drain, 3 Gate, 4 Case

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