Scribd Logo
Upload

Welcome to Scribd!

  • 9 views

    Nte 2997

    Uploaded by

    Jose Abraham Pavon
    This document summarizes the specifications of an NTE2997 MOSFET P-Channel enhancement mode transistor. It has high speed switching capabilities and a wide safe operating area. The document lists absolute maximum ratings like drain-source voltage up to 160V and drain current up to 7A. It also provides typical electrical characteristics such as a drain-source breakdown voltage of 160V and turn-on/off times of 230/110ns.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content

    You might also like

    Nte 2997

    Uploaded by

    Jose Abraham Pavon
    9 views2 pages
    This document summarizes the specifications of an NTE2997 MOSFET P-Channel enhancement mode transistor. It has high speed switching capabilities and a wide safe operating area. The document lists absolute maximum ratings like drain-source voltage up to 160V and drain current up to 7A. It also provides typical electrical characteristics such as a drain-source breakdown voltage of 160V and turn-on/off times of 230/110ns.

    Original Description:

    Original Title

    nte2997

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    Report this Document
    This document summarizes the specifications of an NTE2997 MOSFET P-Channel enhancement mode transistor. It has high speed switching capabilities and a wide safe operating area. The document lists absolute maximum ratings like drain-source voltage up to 160V and drain current up to 7A. It also provides typical electrical characteristics such as a drain-source breakdown voltage of 160V and turn-on/off times of 230/110ns.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    9 views2 pages

    Nte 2997

    Uploaded by

    Jose Abraham Pavon
    This document summarizes the specifications of an NTE2997 MOSFET P-Channel enhancement mode transistor. It has high speed switching capabilities and a wide safe operating area. The document lists absolute maximum ratings like drain-source voltage up to 160V and drain current up to 7A. It also provides typical electrical characteristics such as a drain-source breakdown voltage of 160V and turn-on/off times of 230/110ns.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    of 2

    NTE2997 MOSFET PChannel, Enhancement Mode High Speed Switch

    Features: D Good Frequency Characteristics D High Speed Switching D Wide Area of Safe Operation D Enhancement Mode D Equipped with Gate Protection Diodes Applications: D Low Frequency Power Amplifier D

    G S

    Absolute Maximum Ratings: (TA = +25C unless otherwise specified) DrainSource Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V GateSource Voltage, VGSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Body to Drain Diode Reverse Drain Current, IDR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Channel Dissiption (TC = +25C), PCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Channel Temperature TCH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C Electrical Characteristics: (TC = +25C unless otherwise specified)
    Parameter DrainSource Breakdown Voltage GateSource Breakdown Voltage GateSource Cutoff Voltage DrainSource Saturation Voltage Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equivalent Output Capacitance TurnOn Time TurnOff Time Symbol Test Conditions Min 160 15 0.15 0.7 VGS = 0, VDS = 0V to 480V, Note 5 VDD = 20V, ID = 4A Typ 1.0 900 400 40 90 230 110 Max 1.45 12 1.4 Unit V V V V S pF pF pF pF ns ns V(BR)DSS ID = 10mA, VGS = 10V V(BR)GSS IG = 100A, VDS = 0 VGS(off) VDS(sat) |yfs| Ciss Coss Crss Coss eq. ton toff ID = 100mA, VDS = 10V ID = 7A, VGS = 0, Note 1 ID = 3A, VDS = 10V, Note 1 VDS = 10V, f = 1MHz, VGS = 5V

    Note 1. Pulse test.

    .190 (4.82)

    .615 (15.62)

    S .787 (20.0)

    .591 (15.02)

    .126 (3.22) Dia

    .787 (20.0)

    .215 (5.47)

    You might also like