2N6659

MECHANICAL DATA Dimensions in mm (inches)

8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335)

NCHANNEL ENHANCEMENT MODE MOS TRANSISTOR

FEATURES
Switching Regulators Converters

4.19 (0.165) 4.95 (0.195)

12.70 (0.500) min.

0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

5.08 (0.200) typ.

Motor Drivers
2.54 (0.100)

2 1
0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)

45

TO39 METAL PACKAGE

Underside View PIN 1 Source PIN 3 Drain PIN 2 Gate CASE Drain

ABSOLUTE MAXIMUM RATINGS (TCASE = 25C unless otherwise stated)

VDS VGS ID ID IDM PD PD Tj Tstg TL Drain Source Voltage Gate Source Voltage Drain Current Drain Current Pulsed Drain Current * Power Dissipation Power Dissipation Storage Temperature Range Lead Temperature (1/16 from case for 10 sec.) @ TCASE = 25C @ TCASE = 100C @ TCASE = 25C @ TCASE = 100C 35V 20V 1.4A 1A 3A 6.25W 2.5W 55 to 150C 55 to 150C 300C

Operating Junction Temperature Range

* Pulse width limited by maximum junction temperature.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 4/00

2N6659

ELECTRICAL CHARACTERISTICS (TCASE = 25C unless otherwise stated)

Parameter
STATIC CHARACTERISTICS V(BR)DSS Gate Source Breakdown Voltage VGS(th) IGSS Gate Threshold Voltage Gate Body Leakage Current VGS = 0V VDS = VGS VGS = 15V VDS = 0V VDS = 90V IDSS ID(on)* Zero Gate Voltage Drain Current OnState Drain Current VDS = 72V VDS = 15V VGS = 5V RDS(on)* Drain Source On Resistance VGS = 10V ID = 1A VGS = 5V VDS(on)* gFS* gOS* Drain Source On Voltage Forward Transconductance Common Source Output Conductance DYNAMIC CHARACTERISTICS RDS(on) Cds Ciss Coss Crss tON tOFF Small Signal Drain Source On Resistance Drain Source Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS TurnOn Time TurnOff Time RL = 23W ID = 1A VDD = 25V RG = 25W VGEN = 10V 8 9 10 ns 10 VGS = 10V f = 1kHz VDS = 24V VGS = 0V f = 1MHz ID = 1A 1.3 30 35 28 2 1.8 40 50 40 10 pF VGS = 10V ID = 1A VDS = 10V VDS = 10V TCASE = 125C ID = 0.5A ID = 0.1A 170 TCASE = 125C ID = 0.3A TCASE = 125C VGS = 0V VGS = 0V TCASE = 125C VGS = 10V ID = 0.3A 1.5 1.8 1.8 1.3 2.6 0.54 1.3 2.6 350 1100 5 1.8 3.6 1.5 1.8 3.6 ms V

Test Conditions
ID = 10mA ID = 1mA

Min.
35 0.8

Typ.
70 1.6

Max.

Unit
V nA

2 100 500 10 500

mA
A

ms W

* Pulse Test: tp 80 ms , d 1%

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk

Prelim. 4/00