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    PMOS NMOS Equations and Examples

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    Ahmad Shdifat
    The document defines key terms and equations for nMOS and pMOS transistors. It lists the terminal voltages (VGS, VDS, VSB) and current (ID) for each, along with whether they are positive or negative. It provides the linear and saturation region equations for ID as a function of VGS, VDS, and the threshold voltage VT. The equations include parameters like the field effect mobility (μn, μp), gate oxide capacitance (Cox), and channel width and length (W/L).

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    PMOS NMOS Equations and Examples

    Uploaded by

    Ahmad Shdifat
    11K views3 pages
    The document defines key terms and equations for nMOS and pMOS transistors. It lists the terminal voltages (VGS, VDS, VSB) and current (ID) for each, along with whether they are positive or negative. It provides the linear and saturation region equations for ID as a function of VGS, VDS, and the threshold voltage VT. The equations include parameters like the field effect mobility (μn, μp), gate oxide capacitance (Cox), and channel width and length (W/L).

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    The document defines key terms and equations for nMOS and pMOS transistors. It lists the terminal voltages (VGS, VDS, VSB) and current (ID) for each, along with whether they are positive or negative. It provides the linear and saturation region equations for ID as a function of VGS, VDS, and the threshold voltage VT. The equations include parameters like the field effect mobility (μn, μp), gate oxide capacitance (Cox), and channel width and length (W/L).

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    11K views3 pages

    PMOS NMOS Equations and Examples

    Uploaded by

    Ahmad Shdifat
    The document defines key terms and equations for nMOS and pMOS transistors. It lists the terminal voltages (VGS, VDS, VSB) and current (ID) for each, along with whether they are positive or negative. It provides the linear and saturation region equations for ID as a function of VGS, VDS, and the threshold voltage VT. The equations include parameters like the field effect mobility (μn, μp), gate oxide capacitance (Cox), and channel width and length (W/L).

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    of 3

    Equations and Terms for nMOS and pMOS devices

    Term
    Voltages and Currents

    nMOS
    D
    +

    pMOS
    S

    VDS ID
    VGS

    VSB
    _

    G
    +

    B
    ID +

    VGS
    _

    VSB
    +

    VDS

    VGS, VDS, VSB, VT Cut-off

    Positive When VGS < VT ID=0


    When VGS VT

    Negative When VGS > VT ID=0


    When VGS VT

    Linear

    VDS < VGS - VT Saturation


    ID = kn [(VGS VT)VDS VDS2/2] When VGS VT

    VDS > VGS - VT


    ID = kp [(VGS VT)VDS VDS2/2] When VGS VT

    VDS VGS - VT

    VDS VGS - VT

    k Fermi potential F Depletion region charge densities QB0 and QB Substrate bias coefficient

    ID = (kn/2) [(VGS VT) 2] (1 + VDS) kn = kn W/L

    kn = nCox = nox/tox Negative Negative Positive

    ID = (kp/2) [(VGS VT) 2] (1 + VDS) Kp = kp W/L

    kp = pCox = pox/tox Positive Postitive Negative

    Example:
    What is the value of the capacitor after the pulse. Assume: VDD = 5V VTN=1V VTP=-1V

    Case 1:

    5V 0V
    t=0

    Vout=5V

    Vin

    Case 2:
    VDD

    5V 0V
    t=0

    ID Vin

    Vout=0V

    Case 3:

    VDD

    5V 0V
    t=0

    Vin

    Vout = 0V

    Case 4:

    5V 0V
    t=0

    Vout= 5V Vin

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