1.

(bipolar junction transistor-BJT)

, .
(sandwich ),
-n ( -pnp) -p ( -npn), . . 1.

()

()
1:
() -pnp, () -npn
(: ,
, -n)

3 :
(emitter): ( ++ . 1)
.
(base): ( + .
1),

(collector): .
,

, .

, ( )
( ).
-pnp ,
-npn .
1


.
, -npn
-pnp.
,
,
,
( ).
, 23C
0.3V Ge 0.7V Si ( ,

). , .
3 ,
. ,
, ,
, . . 2.

2 -npn

, ,
, ,
, .
. 3 ,

.

3 -npn

(bipolar BJT),
. ,
(
), . . 4.
- (VBE), :
2

VBE<0.7V ( Si),
.
VBE>0.7,
.
( ) ,

.
, ,
.
(IC) ( ,
).
, ,
, , (IB).
,
(recombination current).
, 95% ,
, 5%
.
:
(C) ().
(IB) .

4 .

Kirchhoff ( ) : I E = I B + I C
(1)
DC

I
, . : DC = C .
IE

1. DC,
.
2.
.
3. DC
: (i) -npn , (ii)

-pnp ,
.
,
(IB)
(IC). , .
, :
DC (DC),
I
, . DC = C .
IB

1. , DC 100-300,
30-150.
DC
DC
2. DC DC : DC =
DC =
.
1 + DC
1 DC
3.
, . DC, (
) (heterojunction bipolar
transistor), , ..
- (SiGe) - (AlGaAs).

. 5 .
,
.

()

()

()

5:
() (CE), () (CB) () (CC)

:
() (Common Emitter, CE):
, .
() (Common Base, CB): ,
.
() (Common Collector, CC):
, .

, .
4

 , , . . 6.

6:

IB =

VBB VBE
RB

(saturation region): VCE (VCE=0-1V),

.
.
E (active region): VCE=1-30V.

, .
( I C = DC I B ).
(breakdown region): ,
- .
(cutoff region):
( ).
7:


. 1.

( )

( )

1:

( )

( )

2. (JFET)
(Junction Field Effect Transistor, JFET)
, ,
,
.

JFET
(.. -n),
(. -p), . . 8.
(-p) .
(-p) (gate).
(-n) (source)
(drain),
(channel).
JFET , .. JFET n JFET p-.
JFET 1 2 . 1 .

JFET

JFET

JFET

8: (JFET)

 . 9 JFET.

JFET n-

JFET p-

9: JFET
(G: , D: , S: )

JFET - (
).

, . .10. ,
()
, ,
JFET. .

10: JFET

. 11 JFET -n,
:
.
(VDD) (VDS).
(VGG) (VGS).
VGG , IG
.
(VGS) .
. 11 JFET
-n . 12
(ID) (VDS) (VGS).

 JFET

11: JFET -n

12: .

:
(shorted-gate):
( ).
(IDSS),
JFET.
(pinch-off voltage): (VP),
, .
VP, ()
. ,

.

JFET:
:
.
8

: .
, .
(gate cut-off voltage): VGS(off),
,
: VP = VGS( off ) .

(transconductance curve) JFET: E

(. 13)
:

VGS

I D = I DSS 1

VGS( off )

13: JFET

3. OFSET
MOSFET (Metal-Oxide Semiconductor FET) IGFET (Insulated-Gate FET)
.
JFET, ,
,
,
.
SiO2
.
( )
.
MOSFET .
, MOSFET:
MOSFET (Depletion mode).
MOSFET (Enhancement mode).
MOSFET
MOSFET (. 14) -n,
. ,
9

 ,
.

14: MOSFET
2: SFET
MOSFET
MOSFET

VDD




p .
.

,
(enhancement mode).

,
.
,

.
(depletion mode).

,
.
.
, ( 1010 - 1014 ).

10

 MOSFET p, (substrate)
,
.
SiO2
.
MOSFET :
.
.
. 2.
. 14 MOSFET n-
:
.
, .
,
( ).

14: MOSFET n-

MOSFET

MOSFET .
MOSFET JFET
AC , JFET.
, ,
.
, ,
(AGC).

MOSFET (normally on MOSFET).

MOSFET n-
. 15 VDS-ID MOSFET n-.

(VGS > 0) .

(VGS = VGS(off)).
(VGS(off) <VGS < 0 V) .
11

 15: / -.

: MOSFET
.
MOSFET
MOSFET (enhancement mode MOSFET)
, n- p (
CMOS Complementary MOS).
MOSFET ,
.
, . . 16.

16: MOSFET

MOSFET
(. 17),
( ),
( p-
/ ). ,
.
12

 17: SF

, n- (
) / /
.
:
.
"" , -
, /
,
.

-n (
) .
,
.
n-, MOSFET n- (nchannel enhancement mode MOSFET).
-n p- ,
SiO2, n-
(inversion layer).
(threshold voltage- VGS(th)) /,
n-, , . . 18:
VGS<VGS(th), MOSFET .
VGS>VGS(th), MOSFET .

18: VDS-ID VGS.

13


1. OSFET (. 19),

( off).
2. OSFET p-, n-,

MOSFET n-.
3. To SiO2
MOSFET , :
.
MOSFET (
).
.

n-

p-

19: OSFET

MOSFET

, , .. TLC251
(Texas Instruments) CA3130 (HARRIS).
, (
MOSFET ).
,
, ,
, .
: , (inverter),
, , .

14