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2N7000
2N7000
Features
High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
___________________________________________________________________________________________
D G S
TO-92
2N7000
S
(TO-236AB) 2N7002/NDS7002A
Units
VDSS
Drain-Source Voltage
60 60
V V V
VDGR
VGSS
20 40
200 500 400 3.2 -55 to 150 300 115 800 200 1.6 280 1500 300 2.4 -65 to 150
ID PD TJ,TSTG TL
Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation Derated above 25 C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds
o
mA mW mW/C C C
THERMAL CHARACTERISTICS
RJA
312.5
625
417
C/W
2N7000.SAM Rev. A1
Electrical Characteristics T
Symbol Parameter OFF CHARACTERISTICS
Conditions
Type
Min
Typ
Max
Units
BVDSS IDSS
All 2N7000
60 1 1
V A mA A mA nA nA nA nA
IGSSF
IGSSR
ON CHARACTERISTICS (Note 1)
VGS(th)
0.8 1
3 2.5 5 9 5.3 7.5 13.5 7.5 13.5 2 3.5 3 5 2.5 0.4 3.75 1.5 1 0.15
RDS(ON)
Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA TJ =125C VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500 mA TJ =100C VGS = 5.0 V, ID = 50 mA TJ =100C VGS = 10 V, ID = 500 mA TJ =125C VGS = 5.0 V, ID = 50 mA TJ =125C
2N7002
NDS7002A
VDS(ON)
Drain-Source On-Voltage
VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA
2N7000
2N7002
NDS7002A
2N7000.SAM Rev. A1
Electrical Characteristics T
Symbol Parameter
Conditions
Type
Min
Typ
Max
Units
ID(ON)
VGS = 4.5 V, VDS = 10 V VGS = 10 V, VDS > 2 VDS(on) VGS = 10 V, VDS > 2 VDS(on)
mA
gFS
Forward Transconductance
VDS = 10 V, ID = 200 mA VDS > 2 VDS(on), ID = 200 mA VDS > 2 VDS(on), ID = 200 mA
mS
DYNAMIC CHARACTERISTICS
pF pF pF ns
VDD = 15 V, RL = 25 , ID = 500 mA, VGS = 10 V, RGEN = 25 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25
2N7000
2N7002 NDS7002A
20
toff
Turn-Off Time
VDD = 15 V, RL = 25 , ID = 500 mA, VGS = 10 V, RGEN = 25 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25
2N7000
10
ns
2N7002 NDS7002A
20
IS ISM VSD
Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 115 mA (Note 1) VGS = 0 V, IS = 400 mA (Note 1)
mA A V
Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
VGS = 10V
, DRAIN-SOURCE CURRENT (A)
1 .5
9.0
V GS =4.0V
4 .5 5 .0 6 .0
7 .0
1 .5
5.0
0 .5
8 .0 9 .0 10
4.0 3.0
0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5
I
0
V GS = 10V
DRAIN-SOURCE ON-RESISTANCE
V GS = 10V
DRAIN-SOURCE ON-RESISTANCE 2 .5
1.75
I D = 500m A
R DS(on) , NORMALIZED
R DS(ON) , NORMALIZED
1.5
TJ = 1 2 5 C
1.25
1 .5
25C
1
-55C
0 .5
0.75
0.5 -5 0
-2 5
125
150
VDS = 10V
1.6 ID , DRAIN CURRENT (A)
T J = -55C
25C 125C
1 .0 5
V DS = VGS I D = 1 mA
1.2
0 .9 5
0.8
0 .9
0.4
0 .8 5
0 0 2 V
GS
10
0 .8 -50
-25
125
150
2N7000.SAM Rev. A1
I D = 250A
IS , REVERSE DRAIN CURRENT (A)
1.075 1.05 1.025 1 0.975 0.95 0.925 -50
1 0 .5
V GS = 0V
BV DSS , NORMALIZED
TJ = 1 2 5 C
0 .1 0 .0 5
25C -5 5 C
0 .0 1 0 .0 0 5
-25
125
150
0 .0 0 1 0 .2
0 .4 V SD
1 .4
60 40
10
V DS = 2 5 V
C iss
20
CAPACITANCE (pF)
C oss
10
ID = 5 0 0 m A
4
C rss f = 1 MHz V GS = 0V
1 2 V DS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50
280m A 115m A
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
V IN
D
RL V OUT
DUT
Output, Vout
VGS
10%
10% 90%
R GEN
Inverted
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11.
2N7000.SAM Rev. A1
3 2 1
10
it
0u
10 1m 10 ms 10 0m s 1s
0u
0.5
RD S(O
Lim N)
1m
0.1 0.05
0.1 0.05
10 10 0m
ms
T A = 25C
10 s DC
T A = 25C
2
1s 10 s DC
60
80
60
80
it
10 1m s
0u
10
0.1 0.05
ms
10
0m
T A = 25C
1s 10 s DC
60
80
0.5
D = 0.5
t1
0 .02 0.01
t2
Single Pulse
0.001
0.01
10
100
300
0.01
Single Pulse
t1
t2
100
300
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DOME E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST
DISCLAIMER
FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP
PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START SuperSOT-3 SuperSOT-6 SuperSOT-8
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LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. G