PHOTOTRANSISTOR

L-53P3C

Features
!MECHANICALLY

Description
AND SPECTRALLY MATCHED TO Made with NPN silicon phototransistor chips.

THE L-53 SERIES INFRARED EMITTING LED LAMP.

!WATER

CLEAR LENS.

Package Dimensions

Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.

SPEC NO: DSAA4158 APPROVED : J. Lu

REV NO: V.4 CHECKED : Allen Liu

DATE:MAR/06/2003 DRAWN: D.L.HUANG

PAGE: 1 OF 2

Electrical / Optical Characteristics at T)=25C

Sy m b o l V BR C EO V BR EC O VCE (SAT) ICEO TR TF Par am et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-Emitter Saturation Voltage Collector Dark Current Rise Time (10% to 90%) Fall Time (90% to 10%) Min . 30 5 Ty p . 3 3 Max . 0.8 100 Un it V V V nA us us Tes t Co n d ic t io n I C=100uA Ee=0mW/cm2 I E=100uA Ee=0mW/cm2 I C=2mA Ee=20mW/cm2 VCE=10V Ee=0mW/cm2 VCE=5V IC=1mA RL=1000

I (ON)

On State Collector Current

0.1

0.5

mA

VCE=5V Ee=1mW/cm2 =940nm

Absolute Maximum Ratings at T)=25C

Par am et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Power Dissipation at (or below) 25C Free Air Temperature Operating Temperature Range Storage Temperature Range Lead soldering Temperature (>5mm for 5sec) Max im u m Rat in g 30V 5V 100mW -40C ~ +85C -40C ~ +85C 260C

SPEC NO: DSAA4158 APPROVED : J. Lu

REV NO: V.4 CHECKED : Allen Liu

DATE:MAR/06/2003 DRAWN: D.L.HUANG

PAGE: 2 OF 2