Molecular Beam Epitaxy (MBE)

2004-10-16

Outline
To give some information about:

Background of MBE ! MBE growth processes ! Views inside representative Commercial MBE Systems
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What is Epitaxy ?
Epitaxy = Epi upon + taxis arranged

Epitaxy = the arrangement of atoms on an ordered substrate

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Liquid Phase Epitaxy (LPE) Vapor phase Epitaxy (VPE) Molecular Beam Epitaxy (MBE)
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Whats MBE?
Three factors to define MBE technique
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Thermal-energy molecular or atomic beams Substrate with elevated temperature High vacuum (10E-3~10E-9 Torr) or Ultral-high vacuum environment (p 1.33x10E-7 Pa or 10E-9 Torr)
A versatile technique for growing thin epitaxial structures made of semiconductors, metals or insulators---defined by Dr. Morton B. Panish.
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Surface processes occurring during film growth

Surface Adsorption ! Surface Dissociation & Migration ! Lattice Incorporation ! Thermal Desorption
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Island forming during MBE growth

A commercial MBE system delivered by VG Semicon

Schematic illustration of a MBE system

Illustration of the Deposition Chamber

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Important Issues in MBE

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Stoichiometry Doping Vacuum Level Lattice Matching or nearly so

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Advantages of MBE Technique

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Clean growth environment Precise control of the beam fluxes and growth condition Easy implementation of in situ diagnostic instruments Compatibility with other high vacuum thin-film processing methods (metal
evaporation, ion beam milling, ion implantation)

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Side view of an entry lock system

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Cassette transfer mechanism

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Deposition chamber

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The Mechanical Shutters

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A Manipulator used in Deposition Chamber

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Front view of Effusion Cells Lock system

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The Structure of an Effusion Cell

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Diagnostic instruments for MBE

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Auger Electron Spectroscopy (AES, SEM) Ellipsometry Laser interferometric method Reflection High-Energy Electron Diffraction (RHEED) Surface Acoustic Wave Devices (Quartz Crystal Microbalances)

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Illustration of how RHEED is used in a MBE system

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Screen Image

Reflection High-Energy Electron Diffraction (RHEED)

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RHEED

Photo from http://www.k-space.com/

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Finding Growth Rates with RHEED

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2-d growth occurs one atomic monolayer at a time Smooth surface gives peaks in RHEED intensity Period of RHEED intensity oscillations corresponds to the time of growth for one layer
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RHEED vs time

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Issues for Solar Apps

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Epitaxy is Ideal State Defects are Recombination Sites MBE is relatively slow May Prefer Compromise to Achieve best Performance/Cost Probably More suited to Nano Circuits

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The End
Upcoming events: Oct 14th: Review for Test 1 Oct 18th: Test 1

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Grad Students Please Linger Now

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