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Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SC4886)
Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SC4886)
Silicon PNP Epitaxial Planar Transistor (Complement To Type 2SC4886)
2SA1860
Application : Audio and General Purpose
(Ta=25C) Ratings 100max 100max 150min 50min 2.0max 50typ 400typ V MHz
16.2
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 150 150 5 14 3 80(Tc=25C) 150 55 to +150 Unit V V V A A W C C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=150V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=500mA VCE=12V, IE=2A VCB=10V, f=1MHz
Unit
A
23.00.3
9.50.2
a b
pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
3.35
I C V CE Characteristics (Typical)
14 Collector-Emitter Saturation Voltage V C E (s at) (V )
A m mA mA mA 00 500 400 00 3 6
00
mA
200
mA
1 50 m A
10
100 mA
10
p)
Tem
p)
se
50mA
C (C
125
0.2
0.4
0.6
0.8
1.0
30
5A
25
I B =20mA
C (
Cas
I C =10A
(Ca
ase
eT
Tem
emp
j- a ( C/W)
h FE I C Characteristics (Typical)
j-a t Characteristics
3
100
Typ
100
25C 30C
1 0.5
50
50
20 0.02
0.1
0.5
10 14
30 0.02
0.1
0.5
10 14
0.1
10
1000 2000
f T I E Characteristics (Typical)
(V C E =12V) 80 40
P c T a Derating
10
0m
10
s
60
Typ
40
40
20
20
0 0.02
0.1
10
0.05 2
34
3.0