This document provides specifications for an NTE601 silicon varistor temperature compensating diode. It lists features such as high reliability, low IR, and large power dissipation. It provides absolute maximum ratings for forward current, reverse voltage, power dissipation, junction temperature, and storage temperature. Electrical characteristics specified include reverse current, forward voltage at different currents and temperatures, and dimensional specifications.
This document provides specifications for an NTE601 silicon varistor temperature compensating diode. It lists features such as high reliability, low IR, and large power dissipation. It provides absolute maximum ratings for forward current, reverse voltage, power dissipation, junction temperature, and storage temperature. Electrical characteristics specified include reverse current, forward voltage at different currents and temperatures, and dimensional specifications.
This document provides specifications for an NTE601 silicon varistor temperature compensating diode. It lists features such as high reliability, low IR, and large power dissipation. It provides absolute maximum ratings for forward current, reverse voltage, power dissipation, junction temperature, and storage temperature. Electrical characteristics specified include reverse current, forward voltage at different currents and temperatures, and dimensional specifications.
Parameter Symbol Test Conditions Min Typ Max Unit Reverse Current IR VR = 6V – – 10 µA Forward Voltage VF IF = 1.5mA 0.59 – 0.64 V IF = 50mA – – 1.1 V Forward Voltage Change with Respect to Temperature –∆VF/∆T IF = 1.5mA – 2.0 – mV/°C