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    Channel Length Modulation: A Second Order Effect of MOSFET

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    Fariha Jannat
    Channel Length Modulation is a second order effect that occurs in MOSFETs when the drain voltage exceeds the overdrive voltage. The channel takes on a tapered shape, pinching off near the drain. This effectively reduces the channel length and allows the pinch off point to move toward the source. As a result, the drain current increases with drain voltage in saturation, and the MOSFET exhibits a finite output resistance.

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    Channel Length Modulation: A Second Order Effect of MOSFET

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    Fariha Jannat
    90 views8 pages
    Channel Length Modulation is a second order effect that occurs in MOSFETs when the drain voltage exceeds the overdrive voltage. The channel takes on a tapered shape, pinching off near the drain. This effectively reduces the channel length and allows the pinch off point to move toward the source. As a result, the drain current increases with drain voltage in saturation, and the MOSFET exhibits a finite output resistance.

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    Channel Length Modulation

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    Channel Length Modulation is a second order effect that occurs in MOSFETs when the drain voltage exceeds the overdrive voltage. The channel takes on a tapered shape, pinching off near the drain. This effectively reduces the channel length and allows the pinch off point to move toward the source. As a result, the drain current increases with drain voltage in saturation, and the MOSFET exhibits a finite output resistance.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPTX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pptx, pdf, or txt
    90 views8 pages

    Channel Length Modulation: A Second Order Effect of MOSFET

    Uploaded by

    Fariha Jannat
    Channel Length Modulation is a second order effect that occurs in MOSFETs when the drain voltage exceeds the overdrive voltage. The channel takes on a tapered shape, pinching off near the drain. This effectively reduces the channel length and allows the pinch off point to move toward the source. As a result, the drain current increases with drain voltage in saturation, and the MOSFET exhibits a finite output resistance.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PPTX, PDF, TXT or read online from Scribd
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    Download as pptx, pdf, or txt
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    Channel Length Modulation :

    A Second Order Effect of MOSFET

    Uniform Channel
    Uniform channel for VDrain =Vsource=0

    Tapered Channel
    When VDrain= +Voltage, Channel takes tapered form: Deepest at the source end Shallowest at the drain end

    Pinch Off
    When VDS equals overdrive voltage(VGS- VT) Pinch Off : Channel width at drain end almost 0 Being called pinch off condition

    Channel Length Modulation


    When VDS exceeds overdrive voltage(VGS- VT) pinch off point moves toward source end Effective length of channel is reduced This is known as Channel Length Modulation

    Impacts of Channel Length Modulation


    Drain current in saturation region becomes dependent on VDS Increase in drain current ( l= process parameter)

    Impacts of Channel Length Modulation


    Finite output resistance.

    THANK YOU

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