3

FET
(Field Effect Transistor)
FET FET
Unipolar Device Channel
FET
1. FET (Junction Field Effect Transistor)
1.1 N - Channel
1.2 P - Channel
2. MOSFET (Metal Oxide Semiconductor FET)
2.1 Depletion Type
2.1.1 N - Channel
2.1.1 P Channel
2.2 Enhancement Type
2.2.1 N - Channel
1. FET (Junction Field Effect Transistor)
JFET G S G
N Channel D S P Channel D S
G S Depletion (Channel)
G S
G S Pinch Off Voltage
(VP) VGS (OFF) JFET G S
P N G S

3.1 JFET N - Channel

 3.2 JFET N - Channel

3.3 JFET P - Channel

3.4 JFET P - Channel

Saturation Region

IDSS = VGS = 0

VP VGS (OFF) = VGS JFET

JEFT VP IDSS

VGS
D S JFET

D S JFET
D S JFET
VDS (SAT) VDS (SAT) VDS (SAT) = VGS VP
JFET
Fixed Bias

3.5 Fixed Bias

VRE + VGS = VGC IG = 0 VRG = 0
VGS = VGG = -2 V (VGS )

VDSQ = 11.1 ( VDSQ) VDS(SAT)

VRD = VRD - VDSQ = 8.9 V
V
8.9 V
= 1 k
RD = RD =
IDQ
8.9 mA

Self Bias

VGS
ID

JFET

0
20

-1
13.9

3.5 Fixed Bias

-2
-3
-4
8.9
5
2.2

-5
0.55

-6
0

V
mA

3.1 Fixed Bias

VGS VGS = - ID RS Bias Line IDQ

IDQ = 9.14 mA 95 mA IDQ = 95 mA IDQ = 9.41 mA

VGSQ = - IDRS = -9.14 mA 200 = -1.9 V
IDQ = Bias Line


ID = - VGS
VP

RS

2 IDQ VGSQ IDQ = 9.41 mA VGSQ = -1.9 V

V
220 V 12 V 1.9 V
VDSQ = 12 V RD = RD =
= 648
IDG
9.41 mA
2. MOSFET (Metal Oxide Semiconductor FET)
(Insulated) SiO2 (Channel) MOSFET
Insulated Gate FET (IGFET) G (Gate)
2.1 Depletion Type MOSFET (DMOSFET)
2.1.1 DMOFET N - Channel

3.6

3.7

3.8 Depletion - Mode

3.8 VGS EGG
N Channel EGG
N Channel N - Channel
N Channel
... N Channel ID D N Channel S

3.9 Enhancement - Mode

3.9 VGS EGG ()
N Channel EGG ()
P P
() N Channel N Channel
() ID D N Channel
S

JFET

2.1.2 DMOSFET P - Channel

3.10

3.11

DMOSFET P - Channel DMOSFET N Channel

VDS VSS DMOSFET
P Channel ID VGS VGS
VGS = 0 IDSS VGS
VGS = VP = 4 V ID = 0 mA

1 DMOSFET N Channel IDSS = 6 mA
VP = -3 mA 3.12 VGS, ID , VDS

VGS
ID

-3
0

-2
-1
0
0.67
2.67
6
3.2

1
10.67

3.12
VGS = VGG + V1 - VS
VGS = 1.5 + ID 300
- VGS
ID = 1.5300
VGS
ID

V1 = 0 (1M) = 0

Bias Line

-1.5
0
1.5
10
5
0
3.3 Bias Line

3.12 Bias Line

VGS = - 0.15 V ID = 5.5 mA
VDS = 18 ID 1.8 k ID 300
VDS = 6.45 V

V
mA

V
mA

2.2 Enhancement Type MOSFET (EMOSFET)

2.2.1 EMOSFET N - Channel

3.13

3.14

EMOSFET N Channel Dc
S EMOSFET VGS ( G
S SS) D S EGG G
P Substrate SiO2 Substrate
G Channel Induced Channel
D Induced Channel S G S (VGS)
VGS Threshold
Voltage (VT) ()
ID VGS
ID = ( VGS - VT)2
( DMOSFET JFET)
EMOSFET
VT ID(ON) VGS(ON) C

ID(ON)
(VGS(ON) VT)2

ID(ON) VGS(ON) ID VGS

EMOSFET VDS VDS(SAT)
VDS(SAT) = VGS - VT
2.2.2 EMOSFET P - Channel

3.15

3.16

EMOSFET N Channel VGS ( Induced

P Channel ) VDS

EMOSFET N Channel VT = 3 V ID = 3 mA VGS(ON) = 5 V

-3
ID(ON)
3

10
A = 0.75 10-3 A
=
2 =
V2
(VGS VT)
(5V 3 V)2
k

ID = 0.75 10-3 (VGS - 3)2

JFET
JFET ... R 10
...
3.17

3.17
JFET N Channel
1. G ( P) D ( N) ...
...
2. G ( P) S ( N) ...
...
3. ... D S ...
JFET P Channel
1. G ( N) D ( P) ...
...
2. G ( N) S ( P) ...
...
3. ... D S ...
G 1 2 D S
JFET ( ECG)
EMOSFET
EMOSFET D S 3.18

N Channel
P - Channel
3.18 EMOSFET

 N - Channel
1. ... D S ...
( ... ) EMOSFET BS 170 ( N Channel)
D S S D ...
...
2. G G D S ...
... ( SiO2 G D S)
G D S ... ( 2 ... )
3. EMOSFET N Channel
3.1 3
3.2 G S ( G S VGS

3.3 G S ... ( EMOSFET

)
P - Channel
EMOSFET P Channel EMOSFET N Channel
1. EMOSFET N Channel
2. EMOSFET N Channel
3. EMOSFET N Channel
3.1 3
3.2 G S ( G S VGS

3.3 D S ... ( EMOSFET

)

1. JFET N Channel P - Channel

2. JFET P - Channel
3. VGS ID VDS VP VGS(OFF) = -4 V

4. MOSFET N Channel P - Channel

5. MOSFET P - Channel
5. FET