Recitation 9 MOSFET VI Characteristics 6.

012 Spring 2009

Recitation 9: MOSFET VI Characteristics
Before the class rst do an exercise on MOS capacitor.
Under T.E., suppose we are under depletion, positive charges at M-O interface, negative
charges (Na

) at O-S interface & depletion region x

do
.
How does the C-V measurement curve look like?
1
= _
Recitation 9 MOSFET VI Characteristics 6.012 Spring 2009
1 1 1
= +
C
tot
C
ox
C
d

ox

s
C
ox
= , C
d
=
t
ox
x
d
(V
GB
)
Useful relations:
V
FB
= (
gate

body
)
1
_
V
T
(n
+
/p) = V
FB
2
p
+ 2
s
qN
a
(2
p
)
C
ox
C
min
1
ox
C
ox
1 +
2C
2
(V
T
V
FB
)
qsNa
Where is C
min
? When V
GB
changes, C
ox
does not change. C
d
changes due to x
d
(V
GB
).
x
d
= 0 at V
FB
,
x
d
= x
d,max
at V
T
= C
min

In tutorial, you can also nd what the GV curves look like for p
+
n MOS or p
+
p MOS,
or n
+
n MOS.
MOSFET Device
We only talked about 2 terminals in our MOS capacitor. Where are the other termi-
nals? Source/Drain. In the MOS capacitor, S/D tie to bulk ground.
Figure 1: MOSFET: 4 terminal device
2
Recitation 9 MOSFET VI Characteristics 6.012 Spring 2009
As we mentioned, V
GB
= V
G
V
B
. In MOSFET, we usually have,
V
DS
= V
D
V
S
V
GS
= V
G
V
S
You can do manipulation: V
GD
= V
G
V
D
= V
GS
V
DS
If the substrate of MOSFET is p-type, what type of MOSFET device this is? n-MOS
or p-MOS?
It is n-MOS. MOSFET operates when it is in Inversion. So for n-MOS: Source/Drain
are n
+
. Thus we have two p n
+
junctions between source-substrate (bulk), n
+
(D)
and p (B). When we apply biases, we try to keep V
BS
0, V
BD
0 otherwise the
p n
+
junction will conduct.
When we use n-MOS, we always try to use source as reference: V
GS
, V
DS
etc. To start
with, we let V
BS
= 0 = V
GB
= V
GS

From yesterdays discussion or 6.002, what are the I-V characteristics (i.e. when
applying V
DS
, what does I
DS
look like) of a n-MOS?
1. Remember we need to apply positive V
GB
(i.e. V
GS
here) in order to reach
threshold. Before threshold, no conduction.
= V
GS
< V
T
, I
DS
= 0 always (cuto)
2. V
GS
V
T
, now we have inversion layer. If the V
DS
= 0, what is the inversion
layer charge density?
|Q
n
| = C
ox
(V
GS
V
T
)
3
Recitation 9 MOSFET VI Characteristics 6.012 Spring 2009
When V
DS
> 0, how will this charge density change? Now from S to D, along
the channel interface, potential is no longer 0.
V (y) = 0(0 < y < L) at each location y
, |Q
n
(y)| = C
ox
(V
GS
V (y) V
T
)
Decrease from source(y = 0)V (y) = 0 to minimum at D(y = L, V (L) = V
DS
).
To calculate I
DS
remember current charge density, carrier velocity.
I
DS
= W |Q
n
(y)| v
y
(y) (v
y
(y) is velocity in the y direction at location y) (1)
How to calculate v
y
(y)? v = E. So need to know E
y
(y). How to know E
y
(y)?
E
y
(y) =
dV (y)
(we have V (x, y) at each location:
dV
will give E
x
)
dy
dx
Therefore to plug everything in the equation (1)
I
DS
= w C
ox
(V
GS
V (y) V
T
)
n

dV
dy
(y)
4
_ _

. .
Recitation 9 MOSFET VI Characteristics 6.012 Spring 2009
Integrating,
y v(y)
I
DS
dy = w
n
C
ox
(V
GS
V
T
V (y

)) dV

(y

) (2)
0 0
I
DS
y
= (V
GS
V
T
) V (y)
1
V
2
(y) (3)
w
n
C
ox

2
So we can solve the potential along each location y.
V (y) = (V
GS
V
T
) (V
GS
V
T
)
2
2I
DSy

w
n
C
ox
Since I
DS
should be the same everywhere, when y = L, V (y) = V
DS
, plug in (3)
I
DS
=
w
L

n
C
ox
(V
GS
V
T

V
2
DS
) V
DS
When V
DS
is small,
w
I
DS

L

n
C
ox
(V
GS
V
T
) V
DS
linear
Gate voltage controlled resistor
Then as V
DS
increases, I
DS
bend over. When V
DS
= V
GS
V
T
: I
DS
saturates
w 1
I
DSAT
=
n
C
ox
(V
GS
V
T
)
2
L
.
2
.
(only depend on V
GS
)
5
Recitation 9 MOSFET VI Characteristics 6.012 Spring 2009
PMOSFET Case
Will need V
BS
0, V
BD
0 always. (typically V
BS
= 0). Now in order to have inversion:
V
GB
= V
GS
< 0
In p-MOS, we use
V
SG
= V
S
V
G
> 0
V
SD
= V
S
V
D
> 0
6
Recitation 9 MOSFET VI Characteristics 6.012 Spring 2009
When working with p-MOS, simply transform
n p
V
Tn
V
Tp
I
Dn
I
Dp
V
GS
V
SG
V
DS
Triode/linear: I
Dp

=
V
SD
w
L

p
C
ox
_
V
SG
+V
Tp

V
SD
2
_
V
SD
V
SD
V
SG
+V
Tp
Saturation: I
Dp
=
w
2L

p
C
ox
(V
SG
+V
Tp
)
2
V
SD
V
SG
+V
Tp
7
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6.012 Microelectronic Devices and Circuits
Spring 2009



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