Examples

Cryogenic process

Bosch process

Comparison

VERTICAL-ETCH PROFILE
Presented by JERIN K ANTONY & MUHAMED SHEREEF P M2 AEI

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Cryogenic process

Bosch process

Comparison

Overview

Examples

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College of Engineering, Trivandrum

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Cryogenic process

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Overview

Examples Cryogenic process

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Cryogenic process

Bosch process

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Overview

Examples Cryogenic process Bosch process

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Cryogenic process

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Overview

Examples Cryogenic process Bosch process Comparison

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Cryogenic process

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Vertical Etching Examples

Figure: Silicon trench etch: 100 m etch depth

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Methods for Vertical prole

Deep reactive-ion etching (DRIE) is used to create Vertical prole. DRIE is a highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers/substrates, typically with high aspect ratios . It is used to excavate trenches for high-density capacitors for DRAM and more recently for creating through wafer vias in advanced 3D wafer level packaging technology . There are two main technologies for high-rate DRIE: cryogenic and Bosch. Both Bosch and cryo processes can fabricate 90o (truly vertical) walls, but often the walls are slightly tapered, e.g. 88o or 92o (retrograde).
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Desirable characteristics for etching high aspect ratio features

Relatively high etch rate.

standard RIE = 1m/min; DRIE 2to > 20m/min.

Anisotropic etch independent of crystal orientation.

Vertical sidewalls/ability to control taper ( 90deg vertical sidewalls).

High mask etching selectivity (120-200:1 for SiO2). Relatively high smoothness on sidewalls and bottom.

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Cryogenic process

In cryogenic-DRIE, the wafer is chilled to 110o C (163 K). Ions bombard upward-facing surfaces and etch them away. This process produces trenches with highly vertical sidewalls. The primary issues with cryo-DRIE is that the standard masks on substrates crack under the extreme cold. Secondarily, etch by-products have a tendency of depositing on the nearest cold surface, i.e. the substrate or electrode.

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Cryogenic process Example

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Bosch process
The Bosch process, named after the German company Robert Bosch GmbH which patented the process. It is also known as pulsed or time-multiplexed etching. It alternates repeatedly between two modes to achieve nearly vertical structures.
A standard, nearly isotropic plasma etch. The plasma contains some ions, which attack the wafer from a nearly vertical direction. Sulfur hexauoride [SF6 ] is often used for silicon. Deposition of a chemically inert passivation layer. (For instance, C4 F8 (Octauorocyclobutane) source gas yields a substance similar to Teon.)

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Bosch process details

Figure: isotropic plasma etch Figure: Isotropic plasma etch

Figure: inert passivation

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More Explanation

Figure: Damage Enhancement model

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Figure: Reactive Spot model

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Cryogenic process

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Comparison

Cryo& Bosch Process

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DRIE parameters

High plasma density at low pressure. SF6 used as isotropic etchant due to low toxicity compared to F2. O2 typically used with SF6 to Combine withSFn and CFn so that F does not combine with them and keeps F concentration high.

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Cryogenic process

Bosch process

Comparison

Comparison of Bosch and Cryo DRIE processes

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