Proceedings of the 40th European Microwave Conference

High-Q MEMS-Reconfigurable Waveguide Filters

Luca Pelliccia#1, Simone Bastioli#2, Federico Casini#3, Roberto Sorrentino#4
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University of Perugia, DIEI, Via G. Duranti 93, 06125 Perugia, Italy

luca.pelliccia@diei.unipg.it simone.bastioli@diei.unipg.it 3 federico.casini@diei.unipg.it 4 roberto.sorrentino@diei.unipg.it
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Abstract This paper presents an innovative concept for the design of MEMS-reconfigurable bandpass filters with very high Q-factor. MEMS switches are arranged at one or both sides of a TE101 mode cavity so as to provide an equivalent reconfigurable inner waveguide wall. The effective width of the cavity can be changed by activating the MEMS switches, so as to control the cavity resonant frequency. The proposed method yields higher Q-factors with respect to other approaches involving ridged or conductor-loaded cavities. Preliminary measurements of a 10 GHz 4th order bandpass filter show a 400 MHz frequency shift with a Q-factor above 900.

I. INTRODUCTION Tunable and reconfigurable bandpass filters with fast tuning speed, high Q-factor (> 500), wide tuning range and low manufacturing cost will be key elements in future reconfigurable telecommunication systems. Size and weight of tunable and multi-standard satellite front-ends will be reduced and innovative programmable and reconfigurable RFsystems will be developed and realized, provided that efficient and reliable solutions for electronically tunable filters are found. So far it has been difficult to achieve an acceptable compromise between tuning speed, broad band tuning, high Q-factor, low-cost and small size. For example, magnetically tunable filters have wide tuning ranges and high Q-factors but they are bulky and consume a considerable amount of DC power [1]. On the contrary, tunable filters realized on coplanar or microstrip technology by employing RF MEMS [2] or ferroelectric components [3] offer compact size, fast tuning and wide tuning range, but the Q-factor is limited by the planar nature of the resonators (< 400). Higher Q-factors (< 700) can be obtained using tunable waveguide resonators [4], but the latter require evanescent-mode cavities and complex piezoelectric actuators. Tunable dielectric resonator bandpass filters with embedded MEMS have also been recently developed [5] achieving high Q-factor (500-1500) but they need specific technology developments and long and fragile embedded elements. Other solutions employing RF MEMS thermal actuators [6] allow high Q-factor to be obtained (<500) but offer very narrow tuning ranges, to be used just for fine tuning. A 2D array of MEMS cantilevers has been used for tuning a 60 GHz micromachined cavity [7] but resulted in a low Q-factor (<100) and a very modest tuning range (180 MHz at 60 GHz).

Recently, capacitive RF MEMS switches have been employed for tuning 5 GHz evanescent-mode cavities [8] with an unloaded Q-factor around 500. Analog frequency-tuning has been obtained in [9] by putting a MEMS-switched varactor at the electric field maximum of a ridged cavity so as to concentrate the electric field inside the MEMS gap. The measured Q-factor is better than 550 for a tuning range of 500 MHz around 5 GHz. Similar results have been obtained also for 13 GHz surface-mounted cavity [10]. A new concept allowing for very high Q-factors in reconfigurable bandpass filters employing cantilever MEMS switches is proposed in this paper. RF MEMS represent an attractive technology for microwave applications thanks to their low insertion loss, low power consumption, compact size and high integrability [11]. A cantilever MEMS switch consists of a gold membrane suspended above an interrupted signal line and anchored at one end that can be electrostatically actuated by applying a voltage difference with respect to an electrode located below. To explain the operating principle, a 60 GHz reconfigurable waveguide cavity is designed and simulated. To validate the concept, a 4th order bandpass filter at 10 GHz has then been fabricated by using equivalent hardwire connections emulating the MEMS states. Measured results confirm the theoretical expectations showing a 4% frequency shift with Qfactors of the order of 1000.

Fig. 1 Proposed solution of 60 GHz one-cavity reconfigurable bandpass filter employing three lines with three cantilever MEMS switches: structure and parameters (a), side view of a cantilever MEMS switch (b), top view of a cantilever MEMS switch (c).

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II. EFFECTIVE CAVITY WIDTH RECONFIGURATION A. Tuning principle at 60 GHz Let us consider the structure depicted in Fig. 1, where the new tuning principle is applied to a 60 GHz TE101 mode rectangular cavity. The cavity has 3.759 mm x 1.88 mm x 3 mm dimensions and is connected at both ends to a WR-15 standard waveguide by two asymmetrical inductive irises. Cantilever MEMS switches are cascaded along three metallic lines connecting the broad waveguide walls. The substrate supporting the MEMS lines is located close to the cavity side wall. The effective width (aeff) of the cavity can be varied by opening (off-state) or closing (on-state) the MEMS switches of one or more lines. Two main configurations can be identified when all MEMS are simultaneously in the on- or off-states. If all MEMS are in on-state (Fig. 2a), the effective cavity width is narrower because the electric field cannot propagate beyond the lines (Fig. 2b), thus the resulting TE101 mode resonant frequency is higher. On the contrary, if all MEMS are in the off-state (Fig. 3a), the effective cavity width is wider (Fig. 3b) and the resulting resonant frequency is lower. Considering the typical physical dimensions of a cantilever MEMS switch (e.g. the length is roughly 0.17 mm), it is necessary to use multiple MEMS for each line. For instance at 60 GHz, three cantilever MEMS (Fig. 1) for each line are employed. B. Simulation results at 60 GHz The Ansoft HFSS simulations at 60 GHz are shown in Fig. 4: 3 GHz frequency shift (5%) is obtained by activating or deactivating all the MEMS lines. Simulation results of two intermediate channels are also shown having a frequency shift of 2 GHz and 1 GHz respectively. The former has been obtained by activating the central MEMS line, while the latter has been achieved by activating one of the outer MEMS lines.
0 S : Channel 1
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-5 S Parameters (dB) -10 -15 -20 -25 -30 52 54 56 58 60 Frequency (GHz) 62

S21: Channel 2 S : Channel 3

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S21: Channel 4

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Fig. 4 Simulated |s21| (Ansoft HFSS) of 60 GHz reconfigurable one-cavity filter. Channel 1: all MEMS lines are in on-state (solid blue line). Channel 2: the central MEMS line is in on-state (dashed red line). Channel 3: one of the outer MEMS lines is in the on-state (dotted green line). Channel 4: all MEMS lines are in off-state (dot-dashed black line). Fig. 2 MEMS on-state configuration (a), E-field behaviour in the MEMS onstate configuration (b).

Intermediate resonant frequencies can be obtained by activating only some of the MEMS lines. The MEMS lines are patterned on a low-loss substrate such as quartz (r = 3.78, tan = 0.0001). In the example of Fig. 1 the substrate thickness is 0.2 mm. The distance between the substrate and the side metallic wall of the waveguide determines the frequency shift between the channels.

Fig. 3 MEMS off-state configuration (a), E-field behaviour in the MEMS offstate configuration (b).

The computed Q-factor of an empty TE101 mode aluminium cavity is 2700, whereas the simulated Q-factor for the cavity including the MEMS lines and the substrate ranges from 2400 to 1600. In particular, the former is obtained with all MEMS lines in on-state, whereas the latter with all MEMS lines in off-state. Note that in the off-state a lower Q-factor is obtained. This can be explained on the following basis. In the off-state the EM field penetrates through the MEMS lines in such a way that the electric field has a non zero amplitude along them; such an amplitude increases as the lines are placed closer to the cavity centre so producing a further decrease of the Q-factor. Moreover the lower Q-factor obtained in the MEMS off-state is also affected by losses occurring in the substrate. The calculated variations of the effective cavity width are +0.22 mm and -0.15 mm from 3.759 mm (i.e. the nominal WR-15 width) in the MEMS off-state and in the MEMS onstate configurations, respectively. The increase of effective width in the MEMS off-state configuration is due to the presence of the dielectric substrate which further reduces the cavity resonant frequency.

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S Parameters (dB)

III. PRELIMINARY MEASUREMENTS AT 10 GHZ In order to validate the approach, the prototype of a 4th order bandpass filter around 10 GHz has been designed, manufactured and tested. A photograph of the disassembled structure is shown in Fig. 5. Symmetrical inductive irises and MEMS lines at both cavity sides have been employed.

0 S21: Channel 1 -10 -20 -30 -40 -50 -60 8 8.5 9 9.5 10 Frequency (GHz) 10.5 11 11.5 S21: Channel 2 S21: Channel 3

Fig. 7 Measured |s21| of the 10 GHz reconfigurable 4th order bandpass filter (with hardwire-connections). Channel 1: all MEMS lines are in the on-state (solid blue line). Channel 2: the central MEMS line is in the on-state (dashed red line). Channel 3: all MEMS lines are in the off-state (dotted green line).

Fig. 5 Photograph of the 10 GHz 4th order reconfigurable bandpass filter prototype employing hardwire connections.

To validate the concept proposed, the MEMS switches have been replaced by hardwire connections, i.e. open- or shortcircuits, which emulate the two MEMS states: continuous copper lines are used for the MEMS on-state configuration (Fig. 6a); multiple gaps (15) along the lines are used for the MEMS off-state configuration (Fig. 6b).

Channel 1 (solid blue line) has been obtained with all lines in the on-state (Fig. 6a); channel 3 (dotted green line) with all lines in the off-state (Fig. 6b); channel 2 (dashed red line) with only the central line of each cavity in the on-state. A total frequency shift of 400 MHz (4%) has been measured from channel 1 to channel 3. The Q-factors extrapolated from the measurements agree with the HFSS predictions. The cavity mode with all MEMS in on-state (channel 1) has 1200 Q-factor and 4% relative bandwidth. The cavity mode with all MEMS in the off-state (channel 3) shows 900 Q-factor and 3% relative bandwidth. The intermediate channel 2 has 950 Q-factor and 3.5% relative bandwidth. Relative bandwidth variation is also produced along with the frequency tuning of the filter. The variation of the effective width of the cavity, in fact, produces a change of the cavity couplings which results in a small bandwidth reduction (from 4% to 3%). Q-factor improvements could be obtained by using thinner substrate sheets as well as by employing a lower tan dielectric such as quartz. In actual MEMS implementations an additional on-state Q-factor reduction is expected due to the non-zero series resistance of the MEMS switches. In order to limit the Q-factor degradation the number of series MEMS should be reduced. IV. FUTURE MEMS SWITCH IMPLEMENTATION The layout employing MEMS switches for a forthcoming test of the 10 GHz reconfigurable bandpass filter is depicted in Fig. 8. Ohmic contact series cantilever RF MEMS switches will be used in the final circuit.

Fig. 6. Hardwire realisations of on-state (a) and off-state (b) MEMS lines.

The two configurations can alternatively be assembled within the cavities thanks to metallic supports specifically designed (Fig. 5). The substrate employed is Ad1000 (r = 10.2; tan = 0.0023) with 0.6 mm thickness. The measured results of the bandpass filter in three different configurations are shown in Fig. 7.

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ACKNOWLEDGMENT The authors wish to thank Dr. Paola Farinelli, University of Perugia, for her support and valuable inputs. REFERENCES
[1] [2] J. Uher and W.J.R. Hoefer, Tunable Microwave and Millimeter-wave Band Pass Filters, IEEE Trans. Microwave Theory and Techniques, Vol. 39, no. 4, pp. 643-653, April 1991. E. Fourn, A. Pothier, C. Champeaux, P. Tristant, A. Catherinot, P. Blondy, G. Tanne, E. Rius, C. Person, and F. Huret, MEMS Switchable Interdigital Coplanar Filter, IEEE Trans. Microwave Theory and Techniques, Vol. 51, no. 1, pp. 320-324, January 2003. S. Courreges, Yuan Li, Zhiyong Zhao, Kwang Choi, A. Hunt, J. Papapolymerou, Ferroelectric Tunable Bandpass Filters for Ka-Band Applications, Proceedings of 38th Microwave Conference, pp. 55-58, Amsterdam, 27-31 October 2008. H. Joshi, H. H. Sigmarsson, D. Peroulis, W. J. Chappell, Highly Loaded Evanescent Cavities for Widely Tunable High-Q Filters, Microwave Symposium, 2007, IEEE/MTT-S International, pp. 21332136, 3-8 June 2007. D. W. Winter and R. R. Mansour, Tunable Dielectric Resonator Bandpass Filter with Embedded MEMS Tuning Elements, IEEE Trans. Microwave Theory & Tech., vol. 55, no. 1, pp. 154-159, January 2007. W. D. Yan and R. R. Mansour, Micromachined Millimeter-wave Ridge Waveguide Filter with Embedded MEMS Tuning Elements, Microwave Symposium Digest, 2006, IEEE-MTT-S, International, pp. 1290-1293, 11-16 June 2006. D. Dancila, P. Ekkels, P. Simon, A. Jourdain, A. Phommahaxay, X. Rottenberg, I. Huynen, I. Ocket, B. Nauwelaers, R. Puers, W. De Raedt1 and H.A.C. Tilmans, A 60GHz silicon micromachined cavity resonator with integrated tuning MEMS array, Proceedings of the 10th International Symposium on RF MEMS and RF Microsystems, pp. 2730, Trento, 6-8 July 2009. Sang-June Park, Isak Reines, Chirag Patel, and Gabriel Rebeiz, HighQ RF-MEMS 4-6 GHz Tunable Evanescent-Mode Cavity Filter, IEEE MTT-S Int. Microwave Symp. Dig., Proceedings of workshop WFD, pp.1145 1148, 7-12 June 2009. R. Stefanini, M. Chatras, A. Pothier, J. C. Orlianges, P. Blondy, High Q Tunable Cavity using Dielectric Less RF-MEMS Varactors, Proceedings of the 39th European Microwave Conference, 1744-1747, Rome, 29 September 1 October 2009. R. Stefanini, J. D. Martinez, M. Chatras, A. Porthier, V. Boria, P. Blondy, 13 GHz High-Q Tunable Surface Mounted Cavity, Proceedings of CNES International Workshop on Microwave Filters, Toulouse, 2009. Sungchan Kang; Hyeon Cheol Kim; Kukjin Chun; Single pole four throw RF MEMS switch with double stop comb drive, Micro Electro Mechanical Systems, 2008. MEMS 2008. IEEE 21st International Conference on, 13-17 Jan. 2008, pp. 1036 1039. P. Farinelli, F. Giacomozzi, G. Mannocchi, R. Marcelli, B. Margesin, P. Mezzanotte, S. Di Nardo, P. Russer, R. Sorrentino, F. Vitulli, L. Vietzorreck, RF-MEMS SPDT Switch on Silicon Substrate for Space Application, Silicon Monolithic Integrated Circuits in RF Systems, 2004. Digest of Papers. 2004 Topical Meeting on 8-10 Sept. 2004, pp.151 154. A. Ocera, P. Farinelli, P. Mezzanotte, R. Sorrentino, B. Margesin, F. Giacomozzi A Novel MEMS-Tunable Hairpin Line Filter on Silicon Substrate,36th European Microwave Conference, Manchester Sept. 2006.

Fig. 8 Layout employing cantilever MEMS switches for the forthcoming realisation of the 10 GHz reconfigurable bandpass filter.

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The device will be manufactured by FBK (Fondazione Bruno Kessler) on a 525 m thick quartz substrate using a well established eight-mask surface micro-machining process compatible with CMOS technology [12]. The suspended membrane of the final switch will have a size of 110 m x 170 m. In the off-state the switch shows 10 fF series capacitance and provides very high wide-band isolation (20dB) from DC up to 20 GHz. In the on-state, on the contrary, it introduces a very low series resistance of 0.9 associated with the metal contact between the membrane and the signal line [13]. In the final design both capacitive and resistive parameters must be included in simulations so as to evaluate the on-state Q-factor degradation due to MEMS series resistances. Cantilever MEMS switches cascaded along a single line can be driven in parallel. Biasing lines for MEMS control can be led outside the cavity by small openings in the side cavity walls. Thin slots through the side wall can be opened to connect the MEMS bias lines to the external control circuitry. Possible undesired radiation through the slots is avoided by cutting them parallel to the current flowing on the waveguide side wall. V. CONCLUSIONS A new concept has been proposed for high-Q MEMStunable rectangular cavities. Cantilever MEMS switches are cascaded along lines connecting the broad waveguide walls so as to realize a virtual movable side wall. The effective width of the cavity can be controlled by opening or closing the MEMS switches of one or more lines, so as to vary the TE101 mode resonant frequency. The concept has been validated by designing and fabricating a 4th order bandpass filter at 10 GHz where MEMS switches were replaced with hardwire connections. A 4% frequency shift with Q-factors ranging from 900 to 1200 depending on the configuration, have been obtained. Forthcoming work includes the realisation and test of a solution employing real cantilever MEMS switches.

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