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2SK30 HKHJHLJKG HFJGJ
2SK30 HKHJHLJKG HFJGJ
2SK30 HKHJHLJKG HFJGJ
2SK3049
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
9.90.3 4.60.2 2.90.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.00.5
3.20.1
13.70.2 4.20.2
3.00.5
2.60.1
0.550.15
2.540.3 3 5.080.5
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time
2SK3049
PD Ta
10 (1) TC=Ta (2) Without heat sink IAS max.
IAS L-load
TC=25C
50
62.5mJ
40 (1) 30
0.3
20
0.1
0.03
0.01 0.1
0.3
10
L-load (mH)
ID VGS
VDS=25V
RDS(on) ID
Drain to source ON-resistance RDS(on) ()
2.5 5
| Yfs | ID
Forward transfer admittance |Yfs| (S)
VGS=10V VDS=25V TC=0C 4 25C 100C 3
10
2.0
TC=100C
TC=100C 6
25C 0C
0.5
0 0 2 4 6 8 10
0 0 2 4 6 8
0 0 2 4 6 8
Rth(t) t
102 (1) Without heat sink (2) With a 100 100 2mm Al heat sink (1)
10
(2)
101
102 104
103
102
101
10
102
103
104
Time t (s)
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