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Probe On-Wafer Diodes
Probe On-Wafer Diodes
Probe On-Wafer novel approach uses horizontal This Diodes coplanar-waveguide probes to
minimize parasitics and maintain accurate RF measurements.
Scott Wartenberg and Chris Mohr
Agilent Technologies, 39201 Cherry St., Newark, CA 94560; (510) 505-5585, (510) 505-5476, FAX: (510) 505-5560, e-mail: scott_wartenberg@ agilent.com, chris_mohr@agilent.com
C processing of nonplanar discrete diodes, such as Schottky and PIN diodes, places the cathode on the top and the anode on the bottom of the wafer (Fig. 1). But in traditional on-wafer RF probing, the probes contact either the top or the bottom surfacenot both. This poses a physical problem for performing RF measurements on these devices. A common solution to this problem is mounting a single die to a connectorized test fixture. But test fixtures are more susceptible to parasitics than on-wafer test methods, and these parasitics can cloud the test results.
ground isolation, calibration, and deembedding.
This article describes a technique for measuring the RF characteristics of nonplanar diodes using horizontal coplanar-waveguide (CPW) RF probes. This method retains all of the advantages of conventional RF onwafer characterization while providing faster design-turnaround time and better model accuracy than the test-fixture approach. The success of the method described here depends on three important techniques:
SYSTEM DESCRIPTION
The new test system centers on an Electroglas probe station, shown in Fig. 2. Figure 3 shows the CPW probe making contact with two diode dice. These diodes are side by side on the wafer surface, aligning with the probe pitch. The ground probe contacts one diode and the signal probe
1. This figure shows a typical diode wafer and the vertical nature of the die.
MICROWAVES & RF
s
MARCH 2001
91
A TECHNIQUE FOR MEASURING THE RF CHARACTERISTICS OF NONPLANAR DIODES USING HORIZONTAL COPLANAR-WAVEGUIDE (CPW) RF PROBES IS DESCRIBED. THE SUCCESS OF THE METHOD DEPENDS ON GROUND ISOLATION, CALIBRATION, AND DE-EMBEDDING.
MEASURED RESULTS
Two diode figures of merit are carrier lifetime and series resistance Rs. High-volume production requires these characteristics to be automatically tested on each wafer. Assembling an RF on-wafer test system to the specifications mentioned met this need. Use Caverlys method1.2 to calculate and Rs with S-parameters. A software routine written in IC-CAP, Agilents device-characterization program, enables quick calculation of and Rs. Calibrating the DC path is
(Top view)
Vch
2. This photograph shows the RF probe system used to test PIN and Schottky diodes on-wafer.
3. The voltage assignments for biasing through the coplanar probes are shown above.
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MICROWAVES & RF
MARCH 2001
92
MICROWAVES & RF
MARCH 2001
96