Power Transistors

2SC3795, 2SC3795A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching

s Features
q q q q

Parameter Collector to base voltage Collector to 2SC3795 2SC3795A 2SC3795

Symbol VCBO VCES VCEO VEBO ICP IC IB

Ratings 800 900 800 900 500 8 10 5 3 40 2 150 55 to +150

Unit V

16.70.3

s Absolute Maximum Ratings

(TC=25C)

7.50.2

3.10.1

4.20.2

High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw

Unit: mm
0.70.1 10.00.2 5.50.2 2.70.2 4.20.2

4.0

1.40.1

1.30.2

Solder Dip

emitter voltage 2SC3795A Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature

14.00.5

V V V A A A W C C

0.5 +0.2 0.1 0.80.1

2.540.25 5.080.5 1 2 3

PC Tj Tstg

1:Base 2:Collector 3:Emitter TO220 Full Pack Package(a)

s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*V CEO(sus)

(TC=25C)
Symbol ICBO IEBO VCEO(sus) hFE1 hFE2 VCE(sat) VBE(sat) fT
*

Conditions VCB = 800V, IE = 0 VCB = 900V, IE = 0 VEB = 5V, IC = 0 IC = 0.2A, L = 25mH VCE = 5V, IC = 0.1A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 10V, IC = 0.5A, f = 1MHz

min

typ

max 100 100 100

Unit A A V

2SC3795 2SC3795A

500 15 8 1 1.5 8 1

V V MHz s s s

2SC3795 2SC3795A

ton tstg IC = 3A, IB1 = 0.6A, IB2 = 0.6A, VCC = 200V

1.2 3 1 1.2

2SC3795 2SC3795A

tf

Test circuit

50/60Hz mercury relay L 25mH 120 6V 1 15V

Power Transistors
PC Ta
80 8 (1) TC=Ta (2) With a 100 100 2mm Al heat sink (3) Without heat sink (PC=2.0W) TC=25C 7

2SC3795, 2SC3795A
IC VCE
Collector to emitter saturation voltage VCE(sat) (V)
100 IC/IB=5 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.01 0.03 25C TC=100C

VCE(sat) IC

Collector power dissipation PC (W)

70 60 50 40 30 20 10 0 0 20 40 (2) (3) (1)

Collector current IC (A)

6 5 4 3 2 1 0

IB=1200mA 1000mA 800mA 600mA 400mA 300mA 200mA 150mA 100mA 50mA 20mA

60

80 100 120 140 160

10

0.1

0.3

10

Ambient temperature Ta (C)

Collector to emitter voltage VCE (V)

Collector current IC (A)

VBE(sat) IC
100 1000 IC/IB=5 30 10 3 25C 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=25C 100C

hFE IC
1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03

fT IC
VCE=10V f=1MHz TC=25C

Base to emitter saturation voltage VBE(sat) (V)

Forward current transfer ratio hFE

100 TC=100C 30 25C 10 3 1 0.3 0.1 0.01 0.03 25C

0.1

0.3

10

0.1

0.3

10

Transition frequency fT (MHz)

300

0.1

0.3

10

Collector current IC (A)

Collector current IC (A)

Collector current IC (A)

Cob VCB
10000 100 IE=0 f=1MHz TC=25C 30

ton, tstg, tf IC
Pulsed tw=1ms Duty cycle=1% IC/IB=5 (IB1=IB2) VCC=200V TC=25C tstg ton tf 0.3 0.1 0.03 0.01

Area of safe operation (ASO)

10 3 1 0.3 0.1 0.03 0.01 Non repetitive pulse 0.003 T =25C C ICP
IC 10ms DC t=0.5ms 1ms

Collector output capacitance Cob (pF)

3000 1000 300 100 30 10 3 1 0.1

Switching time ton,tstg,tf (s)

10 3 1

Collector current IC (A)

0.3

10

30

100

10

30

100

300

Collector to base voltage VCB (V)

Collector current IC (A)

Collector to emitter voltage VCE (V)

2SC3795/2SC3795A
1000

Power Transistors
Area of safe operation, reverse bias ASO
8 7 Lcoil=50H IC/IB=5 (IB1=IB2) TC=100C

2SC3795, 2SC3795A
Reverse bias ASO measuring circuit
L coil IB1 Vin T.U.T IC

Collector current IC (A)

6 5 4 3 2 1 0 0
2SC3795A 2SC3795

IB2

VCC

tW

Vclamp

100 200 300 400 500 600 700 800

Collector to emitter voltage VCE (V)

Rth(t) t
1000 (1) PT=10V 0.2A (2W) and without heat sink (2) PT=10V 1.0A (10W) and with a 100 100 2mm Al heat sink

Thermal resistance Rth(t) (C/W)

100 (1)

10

(2)

0.1 104

103

102

101

10

102

103

104

Time t (s)