AIST

JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Sponsors Japan Advanced Institute of Science and Technology (JAIST) National Institute of Advanced Industrial Science and Technology (AIST)
Academic Program February 12 (Thr.) 10:50-11:00 Opening Adress S. Yamada (JAIST) Febuuary 13 (Fri.) 10:30-11:15 Rashba Effect Spin-Orbit Coupling in Quasi One-Dimensional Systems Thomas Schaepers (ISG-1 and CNI, Juelich) 11:15-12:00 Spin-Dependent Transport in 2DEG Takashi Manago (AIST) 12:00-13:30 Lunch 13:30-14:15 Novel Spin FETs J. Carlos Egues (Universidade de Sao Paulo) 14:15-15:00 Theory for Detection of Quantum Entanglement in Spin-Based Nanosructures Shiro Kawabata (AIST) 15:00-1510 Juelich) Closing Remark Th. Schapers (ISG-1 and CNI,

International Workshop on Spin-FET Based Quantum Information Processing 2004

Castle of QIP/QC

11:00-11:45 Spin-Related Transport in One-Dimensinal Conductors made at High-In Content InGaAs/InAlAs Hetero-Junction Spin-FET gate Syoji Yamada (JAIST) 11:45-12:30 Quantum Optics with Mobile Spins:A New Road to Quantum Information Pocessin Ulrich Zuelicke (Massey University) 12:30-14:00 Lunch 14:00-14:45 Spin-Effects in a Transport through a Point Contact Yasuhiro Tokura (NTT Basic Research Labratories) 14:45-15:30 Non-Collinear RKKY Interaction in Presence Ourselves!? of Rashba Spin-Orbit Coupling Hiroshi Imamura (Tohoku University) 15:30-16:00 Break 16:00-16:45 Resonance Interaction due to Local Spin Formation in Coupled Quantum WiresYuichi Ochiai (Chiba University)

February 12-13, 2004 AIST, Tsukuba

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spin-Related Transport in One-Dimensional Conductors made at High-In Content InGaAs/InAlAs Hetero-Junctions

Syoji Yamada Center for Nano Materials & Technology Japanese Advanced Institute of Science and Technology (JAIST) 1-1, Asahidai, Tatsunokuchi, Ishikawa 923-1292 Japan Collaborators T. Sunouchi (MC), K. Suzuki (MC), T. Kakegawa (DC), T. Sato (DC), H. K. Choi (DC), T. Kita (PD)*, M. Akabori (As.), T. Suzuki (As. Prof.)

*Introduction of Todays talk *Rashba Effect (spin-orbit interaction) in Diffusive Wires *Spin Transport in Side-Gate and Split-Gate QPCs *Proposed Traveling Qubit Devices based on spin FET *Summary SpinFETQIP2004 at AIST Tsukuba Feb. 12-13, 2004

AIST

JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

JAIST Overview
one of the most new National University in Japan

JAIST
(established at 1990)

School of Materials Science (8physics+6chemistry+3biology labs) & CNMT (2physics + 1biology labs) (250MC + 80DC) School of Information Science (17 labs) (260MC + 80DC) School of Knowledge Science (12 labs) (180MC + 50DC) 1,000 students + 300 staffs in total !

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Center for Nano Materials & Technology (CNMT)(1)

Established for fabrication and analysis of nano-structures
Major apparatus & instruments: *In the clean room (750 m 2 , CL 10-1000) EB- & photo-lithography SEM/STM/AFM, FIB, MBE (x5), ECR/RIE etching (x3), Sputtering (x5), Electric furnaces, Ion implantation, Si-related CVDs *In the analysis room TEM (HV and FE), SEM, EPMA, XPS AFM, SIMS, RBS., *In the shield room, NMR (750 MHz) SIMS(CAMECA) TEM(300keV) NMR (750MHz) Clean room boos #5 (CL 100)

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Center for Nano Materials & Technology (CNMT)(2)

Mission: Research, Education and Support on Nanotechnology
Three Research Groups: 1) Quantum Device Materials; semiconductor spintronics, high speed electronics etc 2) Information Device Materials: ceramics, glass optical circuits for information system etc 3) Bio Device Materials: DNA chip, bio materials, structure analysis etc Five Missions:

International collaboration Education and training of students Maintenance of equipments

NT training course

Training of company people Domestic collaboration

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Introduction: myself
Professor at CNMT, JAIST managing Quantum Device Materials Group

*Group Staffs: T. Suzuki (Asso. Prof) M.Akabori (Associate) *Students 7DC + 7MC

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

*Introduction of Todays talk *Rashba Effect (spin-orbit interaction) in Diffusive Wires *Spin Transport in Side-Gate and Split-Gate QPCs *Proposed Traveling Qubit Devices based on spin FET *Summary

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Semiconductor Spintronics
-a new trend in semiconductor physics & electronicsSpintronics Magnetic Engineering spin
spin-optoelectronic LSI

Semiconductor Engineering

non-volatile memory

photon
spin-coherence device quantum computing devices

carrier
magnetic sensor spin transistor

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spintronics (Spin + Electronics) Materials

Metal Ferromagnet Ferromagnetic Materials Non-metal Ferromagnet

Spintronics Materials
Spin Physics Spin Devices

GMR, TMR deviceMRAM (Dilute) Magnetic Smiconductor Semiconductors Non-magnetic Semiconductor

FM / SC hybrid structure

Hetero-Junction
(S-O interaction)

TMRdevicespin-FET, qubit device AIST

JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spintronics Semiconductor
-Details and PhysicsMaterial Details
Magnetic Semiconductor
DMS (Si:Ce,InMnAs, GaMnAs, GaMnN, CdMnTe, HgMnTe, PbMnGe etc) Calcopylite Magnetic metal alloy (MnAs, MnSb, CrAs etc) Quantum well, quantum dot etc

Non-magnetic Semiconductor

Heterojunction, Quantum wire etc InGaAs/InAlAs, InGaAs/InP etc Magnetic metal/Semiconductor photon-spin, dipole-dipole interaction carrier-spin interaction, spin dynamics, relativistic effects etc

Hybrid system

Physics
Electromagnetics Quantum mechanics Solid state physics

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Magnetic Properties
in Typical Semiconductors for Spintronics A. Dilute Magnetic Semiconductor
*III-V (InMnAs, GaMnAs, GaMnN, , , , ) --- [Mn]<5%, Tc<130 K, hole-induced ferromagnetism *II-VI, IV-VI (CdMnSe/Te, HgMnSe/Te, , ,)

B. Non-Magnetic (Narrow Gap) Heterojunction

*In0.23Ga0.77As/InP, In0.5Ga0.5As/In0.5Al0.5As, In0.75Ga0.25As/In0.75Al0.25As, HgTe/HgCdTe, InGaSb/InAlSb? --- structure-induced strong spin-orbit interaction (R >10 meV) bulk-induced spin-orbit interaction

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Semiconductor Spintronics in JAIST

(Center for Nano Materials & Technology, Yamada lab.)

A. Magneto-Electronics
*metallic RAM, magnetic Sensor, *magneto-electronic IC etc.

B. Quantum Spin Electronics

*spin-FET, spin-RTD based on Rashba effect *mesoscopic spintronics devices (quantum wire, point contact etc) -> future quantum computing devices via molecular beam epitaxy growth of heterojunction, basic analysis of spin-transport in low-dimensional samples ultra-small hybrid device fabrication,

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spin-Dephasing Mechanisms in Heterojunctions

event style instantaneous origin SO*1 due to impurities or phonons SO due to crystal field continuous SO due to BIA*2 SO due to SIA*3 name Elliott-Yafet DyakanovPerel Dresselhaus Rashba Field (Ey) + penetration others scattering =spin-flip Lack of mobility dependence

*1 spin-orbit interaction, *2 Bulk Induced Asymmetry, *3 Structure Induced Asymmetry

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JAPAN JAPAN ADVANCED INSTITUTE OF ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0 0 HOKURIKU 1 9 9

Spin-Orbit Interaction
Hamiltonian of spin-orbit interaction: Hso = B[(-ihE)/ 4m0c2]
(spin magnetic moment)(effective field due to orbital motion)

Orbital motion

(-ih = p = m0 v) = B[(v E)/4c2]

-e

H =BB (Zeeman-like presentation)

-e
Beff = [(v E)/4c2] Beff

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Rashba Effect in Heterojunction

(2-dimensional electron gas system)
Potential

Beff v E
2DEG

Beff v E

R
x

Zero-field spin-splitting: R

Gate

SiO2

In0.8Al0.2As

In0.8Ga0.2As

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Estimation of Rashba Spin-Splitting

1 ) From the exact solution to the Hamiltonian
E

H = h k + ( k * 2m
2 2

)Z

EF

2D plane electron energy dispersion

2D plane electron energy dispersion

: spin-orbit coupling parameter

2) from SdH oscillations

(a ) F ro m n = n - + n + , n = n + -n - ; (b) From beat nodes plot ; 2 m * k f i= 1/B he = he 2m*k f = nh m* 2( n - n )

g*m* +1/2 2m 0 i B -1

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Newly Developed Material for Spin-FET

-In0.75Ga0.25As/In0.75Al0.25As Heterojunction-

10nm In75Ga25As

*Normal type *No strain at the heterointerface

40nm In75Al25As

*Suppressed alloy scattering

20nm In75Al25As

*Low temperature high electron mobility;

30nm In75Ga25As

e< 6x105 cm2/Vsec for ~6x1011/cm2 @1.5K -> mean free path of ~ 6m *Large spin-orbit coupling constant;

InAlAs (IS)-SGB

GaAs substrate

=35(x10-12 eVm) @1.5 K ->R13meV

MDH full structure

AIST

JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

*Introduction of Todays talk *Rashba Effect (spin-orbit interaction) in Diffusive Wires *Spin Transport in Side-Gate and Split-Gate QPCs *Proposed Traveling Qubit Devices based on spin FET *Summary

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Why 1D Conductors ?
- Realistic Rashba spin-FETSpin-injection (Source) Gate metal Spin-filtering (Drain)

FM electrode Electron flow Side view (1D model)

2DEG

Rashba model (implicitly 1-dimensional)

+Presession

Spin-orbit interaction L

angle (Vg)=82m*(Vg)L /h2

v Beff Gate

Drain 2DEG (Ferromagnetic) Source

1< 2
FM source FM Drain

since L1 < L2 (if lsd > > L) smearing lsd: spin-diffusion length

1D spin-FET is indispensable !?

Top view (2D model)

L ==> Restriction of transport direction is

important for effective spin FET operation ! ==> 1D transport analysis of Rashba effect !

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Rashba Effect in Quantum Wires

(1) In-plane side-gate wire samples

Typical value at 77 K ns~ 6.51011 cm-2 e~ 1.4105 cm2/Vs

Effective wire width can be controlled by using the side gate electrode.
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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Rashba Effect in Side-Gate Narrow Wires

(2) Magneto-resistances and FFT results
NS- NS+ VSG=0V -6 -6 9.8 21.1 27.5 34.6 42.6 28.9 19.4 22.4

=9.8
VSG=0V x1012eVm

d2R/dB2 (arb. unit)

FFT power (a.u.)

-9 -10 -11 -12 -13

-9 -10 -11 -12 -13

-15 -15 -17 -17

1/B (T-1)

Characteristic Field BC (T)

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Rashba Effect in Side-Gate Narrow Wires

(3) ns and vs. Gate voltage

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Rashba Effect in Top-Gate Narrow Wires

(4) Former results
Spin-orbit coupling parameter (10-12 eVm)
40

Sheet electron density (1011 cm-2)

First derivatives of Rxx, dRxx/dB

Vg=-4 (V

5 .0

J // <-110> J // <110>
30

Vg=-3 (V

4 .0

Vg=-2 (V

20

Vg=-1 (V

3 .0

10

Vg=0 (V)

2 .0

<110>
0

Inverse Magnetic Field (1/T)

-6 .0

-5 .0

-4 .0

-3 .0

-2 .0

-1 .0

0 .0

Gate Voltage (V)

(=R/2kf) and nss vs. Vg

spin-splitting =2kf at Fermi level

= 30 (x10-12 ) eVm corresponds to ~10meV

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Rashba Effect in Side-Gate Narrow Wires

(5) Discussion and Summary
Origin of behavior depending on VSG

v <Evertical>
=2.1M V/m

<Beff>

<Beff>

<Elatera>

v <Elateral>=0.9MV/m <Evertical> <Etotal>=2.3MV/m

Rashba effect was found to be controlled

E v Beff Drain TopGate 2DEG Beff (Ferromagnetic) Source v E SideGate (Ferromagnetic) Source Drain 2DEG

by the top-gate electrode (former work)

by the side-gate electrode (this work, for the first time!)

AIST

JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

*Introduction of Todays talk *Rashba Effect (spin-orbit interaction) in Diffusive Wires *Spin Transport in Side-Gate and Split-Gate QPCs *Proposed Traveling Qubit Devices based on spin FET *Summary

AIST

JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spin-Transport in QPC Samples

(1) sample structures
Side-Gate QPC
1m 500nm 2DEG T i/Au side-gate 400nm

Split-Gate QPC
700nm T i/Au split-gate

polyimide 2DEG

200nm 70nm

Schematic cross-sectional view of the wire QPC with finger side-gates

Schematic cross-sectional view of the splitgate QPC

Drain Finger side-gate Source 2.0m

Split-gate

1.0m

Top view SEM photo of side-gate wire QPC

Top view SEM photo of split-gate QPC (constriction part)

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spin-Transport in QPC Samples

(2) side-gate QPC with magnetic field

B= 0 (T)

ns = 1.81011[cm-2]
Perpendicular magnetic field *Not so clear 0.5 (2e2/h) x n steps at B=0 *Becoming definite when B increases *Suppression of backscattering by the formation of edge states

//

B// = 0 (T)

Parallel magnetic field *Also not so clear steps at B// =0 *Almost no improvement by applying B// *Not enough field for Zeeman splitting

0.5 (2e2/h) steps with no Zeeman origin !

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spin-Transport in QPC Samples

(3) split-gate QPC
ns = 3.21011[cm-2]

Clear (2e2/h) x n steps !

mean free path le= ( h /e) (2ns) 1/2 2 . 0 m ~ spin-diffusion length lsd:= (Dso) 1/2 2 m > constriction length: ~0.1 m
Cf. Effective width of the constriction > (f/2) /kf (/2ns)
1/2

23 nm

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spin-Transport in QPC Samples

(4) Possible origins for the 0.5(2e2/h) steps -1
Note
*Confirmed quantization in unit of 0.5(2e2/h) in side-gate QPC *Confirmed quantization in unit of

(2e2/h) in split-gate QPC

What is the difference between the two-type samples ? Possible Origins *1 Difference inelectron density Lower (1.8x1011/cm2 ) than that (3.2x1011/cm2) in the split-gate QPC stronger e-e interaction (cf. Pyshkins result), but it does not explain high index steps, 0.5(2e2/h) x n (n >1) . *2 Difference in dimensionality Q1D-Q1D-Q1D (side gate) vs 2D-Q1D-2D (split-gate) = adiabatic (TL wire) vs abrupt cf. Governales result = spin accumulation in 1D wire
(Phys. Rev. B66, 073311, 2002)

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spin-Transport in QPC Samples

(5) Possible origin for the 0.5(2e2/h) steps -2
Spin 1D condition; w < /kso ,, where so ~h2kso2/82m* If so ~10 meV is assumed, one obtains ~ /kso ~ so/2 ~ 60 nm. Since the effective width of constriction in the side-gate QPC is > 30 nm, the spin 1D condition is fulfilled at least at lowest index plateau. - Essential realization of Tomonaga-Luttinger wire - Spin-polarized transport = spin accumulation (Governale and Zuelicke)

2D
-k +k

1D
w<100nm -k +k

1 0

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

*Introduction (JAIST & myself) *Introduction of Todays talk *Rashba Effect (spin-orbit interaction) in Diffusive Wires *Spin Transport in Side-Gate and Split-Gate QPCs *Proposed Traveling Qubit Devices based on spin FET *Summary

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spin-FET and Possible Qubit Devices

Gate

v Beff Gate 1 Gate 2

Drain Beff v

Gate

Drain 1

1-d wire

2DEG E (Ferromagnetic) Source

(Ferromagnetic) Source 1-d wire Drain 2

Interaction region

Two-gate spin-FET

Split (Bend) spin-FET

Coupled 2-bits device

Dipole-dipole interaction Realization of quantum interaction operation Unitary evolution

superimposed state: cos(/2) |0> + eisin(/2) |1>

Spin-polarized/entangled state detector J.C.Egues et al., PRL, 89,176401-1 (2002).

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Summary
Studied Q1DEG transports in metamorphic In0.75Ga0.25As/ In0.75Al0.25As heterojunctions Observed enhancement of spin-orbit interaction in diffusive wires with in-plane side gate. Probably due to the additional lateral electric field asymmetry by the side-gate voltage application qubit device realization? Observed 0.5(2e2/h) conductance steps in side-gate QPC. Possible origin is spin-polarization in TL wire with strong spinorbit interaction new-type spin filter? Proposed a variety of traveling qubit devices based on spin FET

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Result (2)
- Some Estimations in Side-Gate QPC Series resistance ? less than 3 K Local impurities ? observed in various samples with different dimensions
-25 6 G (e2 / h) 5 4 3 2 1 0 -8 -7 Gate Voltage (V) -6 Gate Voltage (V) -20 -15 -10 -5

Air gap (1m)

Channel width2m

500nm Bigger sample, w=2m, g=1m

mean free path le= ( h /e)(2ns)1/2 ~ 1.4 m ~ spin-diffusion length lsd:=(Dso)1/2 ~ 2 m > constriction length: ~0.2 m
Effective width of the constriction > (f/2) ~ /kf ~ (/2ns)1/2 ~ 30 nm The 0.5(2e2/h) conductance steps are a universal ballistic transport property.

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Application of 1D spin-FET
(2)Quantum computing devices

v Beff Gate 1 Gate 2

Drain Beff v

Gate

Drain 1

2DEG E (Ferromagnetic) Source

(Ferromagnetic) Source 1-d wire

Drain 2

Two-gate spin-FET

Split (Bend) spin-FET

Spin-plarized/entangled state detector J.C.Egues et al., PRL, 89,176401-1 (2002).

superimposed state: cos(/2) |0> + eisin(/2) |1>

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Spin-FET and possible Qubit Devices

Gate

Quantum-bit device
f ()

(Ferromagnetic) Source 2DEG Spin-injection FM electrode FM electrode Gate metal

1-d wire

F (,)
Drain

Realization of superimposed state cos(/2)0>+exp(i)sin(/2)1> Spin-precession

Gate 1-d wire

Coupled 2-bits device

Dipole-dipole interaction Realization of quantum interaction operation Unitary evolution

Spin-FET

Interaction region

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0

Center for New Materials

for Nano-Science & Technology
Established for fabrication and analysis of nanostructures
Major apparatus & instruments: *Clean room (750 m 2 , CL 10-1000) EB- & photo-lithography SEM/STM/AFM, FIB, MBE (x4), ECR/RIE etching(x3), Sputtering(x5), Electric furnaces, Ion implantation, Si-related CVDs *Analysis equipments TEM (HV and FE), SEM, EPMA, XPS NMR (750 MHz), AFM, SIMS Clean room voos #5 (CL 100)

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JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY, HOKURIKU 1 9 9 0