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Silicon N Channel MOS FET High Speed Power Switching: Features
Silicon N Channel MOS FET High Speed Power Switching: Features
Features
Low on-resistance: R DS (on) = 0.053 typ. Low leakage current: IDSS = 1 A max (at VDS = 250 V, VGS = 0 V) High speed switching: tf = 110 ns typ (at ID = 15 A, RL = 8.3 , VGS = 10 V) Low gate charge: Qg = 110 nC typ (at VDD = 200 V, VGS = 10 V, ID = 30 A) Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
H5N2509P
Unit V V A A A A A W C/W C C
Note 1
Note 2
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 250 3.0 17 Typ 0.053 28 3600 450 115 48 120 190 110 110 19 53 0.9 210 1.8 Max 0.1 1 4.0 0.069 1.35 Unit V A A V S pF pF pF ns ns ns ns nC nC nC V ns C Test Conditions ID = 10 mA, VGS = 0 VGS = 30 V, VDS = 0 VDS = 250 V, VGS = 0 VDS = 10 V, ID = 1 mA Note 4 ID = 15 A, VGS = 10 V ID = 15 A, VDS = 10 V VDS = 25 V VGS = 0 f = 1 MHz ID = 15 A VGS = 10 V RL = 8.3 Rg = 10 VDD = 200 V VGS = 10 V ID = 30 A IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 diF/dt = 100 A/s
Note 4
H5N2509P
Main Characteristics
Power vs. Temperature Derating
Pch (W)
200 1000 300
ID (A)
150
100 30
PW 1
DC
10
Channel Dissipation
100
50
Drain Current
Case Temperature
Tc (C)
VDS (V)
ID (A)
60
80
80
60
Drain Current
40
20
20
0 0 4 8 12 16 20
VDS (V)
VGS (V)
3 ID = 30 A
15 A 5A
20
0 0 4 8 12 16 20
10 1 2 5 10 20 50 100
VGS (V)
Drain Current
ID (A)
H5N2509P
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
200 100 50 20 10 5 2 1 0.5 0.2 0.2 VDS = 10 V Pulse Test 0.5 1 2 5 10 20 50 100 25C 75C Tc = 25C Pulse Test VGS = 10 V
160 ID = 30 A
120
80 5A 40
15 A
0 40
40
80
120
160
Case Temperature
Tc (C)
Drain Current
ID (A)
500
Capacitance C (pF)
10000 5000 2000 1000 500 200 100 50 Crss 0 20 40 60 80 100 Coss Ciss
200 100 50
20 10 0.1
0.3
10
30
100
IDR (A)
VDS (V)
Switching Characteristics
VGS (V)
20 10000 VGS = 10 V, VDD = 125 V PW = 10 s, duty 1 % RG = 10 1000 td(off) 100 tf td(on) tr 10 0.1 0.3 1 3 10 30 100
500
16
300
12
200
100
0 0
0 200
Gate Charge
Qg (nC)
Drain Current
ID (A)
H5N2509P
Reverse Drain Current vs. Source to Drain Voltage
100
IDR (A)
Pulse Test
80 VGS = 0 V 60
4 ID = 10 mA 3 1 mA 0.1 mA
VSD (V)
Case Temperature
Tc (C)
D=1 0.5
0.3
0.2
0.1
0.1
0.05
D=
PW T
0.03
0.02 1 0.0
1s
PW T
p ot
0.01 10
100
1m
10 m
100 m
10
Pulse Width
PW (S)
Waveform
90%
10%
90% td(on) tr
90% td(off) tf
H5N2509P
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
4.8 0.2 1.5
15.6 0.3
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
2.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name Quantity Shipping Container H5N2509P-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
0.3
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