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    Finfet Transistors: Vlsi Circuit Design - Cse 60462 Patrick Donnelly

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    FinFET transistors use a fin-like gate to improve performance and power consumption over planar MOSFETs. FinFETs can be used like regular MOSFETs and are being adopted for 14nm and 16nm processes by Globalfoundries, TSMC, and Intel due to their optimal performance. Key parameters are silicon fin thickness and width/height, while challenges include lithography issues and strain/doping of thin fins. Intel's tri-gate FinFET design improved Ivy Bridge CPU performance by 37% and reduced power by 50% compared to previous planar transistors.

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    Finfet Transistors: Vlsi Circuit Design - Cse 60462 Patrick Donnelly

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    217 views12 pages
    FinFET transistors use a fin-like gate to improve performance and power consumption over planar MOSFETs. FinFETs can be used like regular MOSFETs and are being adopted for 14nm and 16nm processes by Globalfoundries, TSMC, and Intel due to their optimal performance. Key parameters are silicon fin thickness and width/height, while challenges include lithography issues and strain/doping of thin fins. Intel's tri-gate FinFET design improved Ivy Bridge CPU performance by 37% and reduced power by 50% compared to previous planar transistors.

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    FinFET transistors use a fin-like gate to improve performance and power consumption over planar MOSFETs. FinFETs can be used like regular MOSFETs and are being adopted for 14nm and 16nm processes by Globalfoundries, TSMC, and Intel due to their optimal performance. Key parameters are silicon fin thickness and width/height, while challenges include lithography issues and strain/doping of thin fins. Intel's tri-gate FinFET design improved Ivy Bridge CPU performance by 37% and reduced power by 50% compared to previous planar transistors.

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    217 views12 pages

    Finfet Transistors: Vlsi Circuit Design - Cse 60462 Patrick Donnelly

    Uploaded by

    mouneshsk
    FinFET transistors use a fin-like gate to improve performance and power consumption over planar MOSFETs. FinFETs can be used like regular MOSFETs and are being adopted for 14nm and 16nm processes by Globalfoundries, TSMC, and Intel due to their optimal performance. Key parameters are silicon fin thickness and width/height, while challenges include lithography issues and strain/doping of thin fins. Intel's tri-gate FinFET design improved Ivy Bridge CPU performance by 37% and reduced power by 50% compared to previous planar transistors.

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    FinFET Transistors

    VLSI Circuit Design -- CSE 60462 Patrick Donnelly

    D. Hisamoto et al., "A Folded-channel MOSFET for Deep-sub-tenth Micron Era", IEDM Technical Digest, pp 1032-1034, 1998.

    http://www.eetimes.com/electronics-news/4396720/Globalfoundries-to-offer-14-nm-process-withFinFETs-in-2014

    Circuits Using This Device


    Can be used as a regular MOSFET.
    "Cadence is expected to treat FinFETs as transistors, automating the way they are generated in custom design flows in ways suitable for the target foundry."

    == > FinFETs primarily are explored for optimal performance characteristics.

    http://www.eetimes.com/electronics-news/4398727/TSMC-taps-ARM-V8-in-road-to-16-nm-FinFET

    Key Parameters Silicon Fin Thickness (Gate Length) Silicon Fin Width/Height (Capacitor Area)

    Challenges in Design
    Lithography
    3D structures (narrow height)

    "Strain Engineering" for fins Doping for fins

    http://en.wikipedia.org/wiki/File:Doublegate_FinFET.PNG

    Intel Tri-Gate Transistors


    Currently in 22nm Ivy Bridge CPUs. "Trapezoidal, or triangular" in cross-section. 22nm 37% performance increase over 32nm planar; 50% power decrease with same performance. Improved switching delays. Higher drive current.

    http://www.eetimes.com/electronics-news/4373195/Intel-FinFETs-shape-revealed http://www.intel.com/content/www/us/en/silicon-innovations/silicon-innovations-technology.html

    http://en.wikipedia.org/wiki/File:Trigate.jpg

    http://www.eetimes.com/electronics-news/4373195/Intel-FinFETs-shape-revealed

    FinFET in New Technologies


    GlobalFoundaries (AMD) to offer FinFET technology in 2014 with 14nm process. TSMC also to offer FinFET at 16nm in 2014.

    http://www.eetimes.com/electronics-news/4396720/Globalfoundries-to-offer-14-nm-process-with-FinFETs-in-2014http://www. eetimes.com/electronics-news/4398727/TSMC-taps-ARM-V8-in-road-to-16-nm-FinFET

    Questions?
    D. Hisamoto et al., "A Folded-channel MOSFET for Deep-sub-tenth Micron Era", IEDM Technical Digest, pp 1032-1034, 1998. http://www.eetimes.com/electronicsnews/4396720/Globalfoundries-to-offer-14-nm-processwith-FinFETs-in-2014 http://www.eetimes.com/electronicsnews/4398727/TSMC-taps-ARM-V8-in-road-to-16-nmFinFET http://www.eetimes.com/electronicsnews/4373195/Intel-FinFETs-shape-revealed http://www.intel.com/content/www/us/en/siliconinnovations/silicon-innovations-technology.html

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