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MIT6 012S09 Rec18
MIT6 012S09 Rec18
This set of equations can describe all four regimes of operation for BJT
Recitation 18
Cut-o
VBE < 0, VBC < 0
Saturation
VBE > 0, VBC > 0
Recitation 18
0.1 to 0.2 V.
Why? Each curve IB is xed VCE = VBE VBC , = VBC = VBE VCE When VCE is large, VBC < 0, FAR. As we reduce VCE , VBC reduces, at some point, VBC starts to become forward biased. Now, hole ux from B C increases exponentially from Law of Junction; to keep IB constant, hole ux into emitter must be reduced, = VBE drops, = IC drops quickly.
Recitation 18
The input resistance of MOSFET is . In order to have a high input resistance for BJT, need high current gain F Example: npn with F = 150, Ic = mA gm = g = Ic 1 103 A = 40 mS = Vth 0.025 V 40 mS gm = = 0.267 mS ( = 3.7 k) F 150
3. Output resistance: Ebers-Moll model have perfect current source in FAR. Real characteristics show some increase in ic with VCE
go = In FAR: Ic
ic where does go come from? VCE qAE n2 i DnB qVBE /kT = Is eqVBE /kT = e NaB wB Ic VCE + VA Ic (VA VA
Example: Ic = 100 A, VA = 35 V, = o = 350 k VA increases with increasing base width and increasing base doping. This is also why NaB usually NdC 4
Recitation 18
Both are functions of bias Since NaB NdC , CjE CjC . CjC is often called C .
Diusion Capacitance
Cb = |QnB | = = Cb =
2 wB 2Dn
|QnB | VBE 1 qAE wB npBO eqVBE /kT 2 wB qAE DnB 1 wB npBO eqVBE /kT = 2 DnB wB 2 2 wB wB ic = gm VBE 2DnB 2Dn
2 wB 2DnB
Ic
Recitation 18
Cb is in between base and emitter: Cb + CjE = C Add the following depletion capacitance: collector to bulk CCS parasitic resistances: b of base, ex of emitter, c of collector
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