Exercises From eqns {13.

23-25) we may then derive the Poul versus Pin curve which, in many cases, will exhibit bistability similar to that shown in Fig. 13.23. Let us now summarize the advantages of multiple quanfum well structures for the applications discussed. The main advantage is compatibiliry, that is the voltages are compatible with the eleckonics, and the wavelengths are compatible with laser diodes. In addition, the materials are compatible with those used both in electronics and for laser diodes, so the devices are potential candidates for components in integrated opto-electronic systems. I have only mentioned GaAs-AIGaAs structures, but there are, of course, others as well. The rules are clearly the same, which apply to the production ofheterojunction lasers. The lattice constants must be close, and the bandgaps must be in the right range. Interestingly, some of the combinations offer quite new physics, for example in an InAs-GaSb quanfum u'ell. the electrons are confined in one layer and the holes in the other one. As you may have gathered, I find this topic quite fascinating. so perhaps I spent a little more time on it than its present status rvould warrant. I hope you will forgive me.

359

Erercises
13.1. Light of fiequency u and intensity Il is incident upon a photoconductor (Fig. 13.30) which has an attenuetion
coeffrcient a. Assuming that only electrons are generated shorv that the excess current due to the input light is

Find an expression for it tbr the photoconductor discussed

in Erercise

13.

1 .

13.3. In a p-i-n diode the so-called intrinsic region is usually a lightly doped n-r_vpe region. Determine the electric ileld
and potential distribution for a reverse bias of U, when the impurity densities of the three regions are Na. Npl and Np2
(see

L,l:e-#r.pr.V-. chv

bnln

| -e-od
a

Fig. 13.31).

rvhere r" is the electron lifetime and 4 is the quanfum efliciency (average number ofelectrons generated per incident photon). Light

When this device is used as a photodetector with light incident from the left, the p+ region must be made extremely thin. Why'l (Hint: Assume that the depletion region is all in the lightly doped n region. Neglect the built-in voltage.) pn

)----N.,,

Nor>>No,

Fig. 13.30
13.2. The photoconductive gain is defined

Fig. 13.31
as

^ "-

Number of photocarriers crossing the electrodes per unit time

13.4.

volume hologram

is

recorded

in a

photosensi-

N'umberofpho@

tive material with a refractive index of 1.52 at a wavelength

of