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BPW 34
BPW 34
Vishay Semiconductors
Angle of half sensitivity: = 65 Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with
DESCRIPTION
BPW34 is a PIN photodiode with high speed and high radiant sensitivity in miniature, flat, top view, clear plastic package. It is sensitive to visible and near infrared radiation. BPW34S is packed in tubes, specifications like BPW34.
APPLICATIONS
High speed photo detector
PRODUCT SUMMARY
COMPONENT BPW34 BPW34S Note Test condition see table Basic Characteristics Ira (A) 50 50 (deg) 65 65 0.1 (nm) 430 to 1100 430 to 1100
ORDERING INFORMATION
ORDERING CODE BPW34 BPW34S Note MOQ: minimum order quantity PACKAGING Bulk Tube REMARKS MOQ: 3000 pcs, 3000 pcs/bulk MOQ: 1800 pcs, 45 pcs/tube PACKAGE FORM Top view Top view
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BPW34, BPW34S
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage Temperature coefficient of Vo Short circuit current Temperature coefficient of Ik Reverse light current Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Noise equivalent power Rise time Fall time Note Tamb = 25 C, unless otherwise specified VR = 10 V, = 950 nm VR = 10 V, RL = 1 k, = 820 nm VR = 10 V, RL = 1 k, = 820 nm TEST CONDITION IR = 100 A, E = 0 VR = 10 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 VR = 3 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm EA = 1 klx Ee = 1 mW/cm2, = 950 nm Ee = 1 mW/cm2, = 950 nm EA = 1 klx, VR = 5 V Ee = 1 mW/cm2, = 950 nm, VR = 5 V SYMBOL V(BR) Iro CD CD Vo TKVo Ik Ik TKIk Ira Ira 40 MIN. 60 2 70 25 350 - 2.6 70 47 0.1 75 50 65 900 430 to 1100 4 x 10-14 100 100 40 30 TYP. MAX. UNIT V nA pF pF mV mV/K A A %/K A A deg nm nm W/Hz ns ns
p 0.1 NEP tr tf
BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
1000
Iro - Reverse Dark Current (nA)
1.4
1.2
100
VR = 5 V = 950 nm
1.0
10
0.8
VR = 10 V 1 20 40 60 80 100
0.6 0 20 40 60 80 100
94 8403
94 8416
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BPW34, BPW34S
Vishay Semiconductors
Silicon PIN Photodiode, RoHS Compliant
80
100
60
E=0 f = 1 MHz
10
40
VR = 5 V = 950 nm
20
0.1 0.01
94 8417
0.1
10
0 0.1
94 8407
10
100
Ee - Irradiance (mW/cm2)
1000
1.0 0.8 0.6 0.4 0.2 0 350 550 750 950 1150 - Wavelength (nm)
100
10 VR = 5 V 1
0.1 101
94 8418
102
103
EA - Illuminance (lx)
94 8420
100
Srel - Relative Radiant Sensitivity Ira - Reverse Light Current (A)
10
20 30
0.7
1
94 8419
94 8406
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- Angular Displacement
BPW34, BPW34S
Silicon PIN Photodiode, RoHS Compliant
Vishay Semiconductors
96 12186
10.7
9.5
214.5
Stopper
18800
Fig. 9 - Drawing Proportions not scaled Document Number: 81521 Rev. 2.0, 08-Sep-08 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com 389
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
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