Ion-sensitive field-effect transistors

Presented By Naveen Kaushik Arnab Bose Subrat Mishra PrasannaThengodkar Electrical Engineering IIT Bombay

Contents
Motivation Existing Techniques Introduction to ISFET ISFET with membranes Challenges Novel approach Conclusion

Introduction
Chemical sensors are micro-devices that connect the chemical and electrical domains

The response of the sensors should be fast and selective for the analyte. Measurement of pH is a very common task of chemical senors required for many environmental and biomedical applications

Existing techniques
Glass membrane electrode

Limitations : 1. the inability to operate at high temperatures, 2. being a bulky device 3. manufacturing difficulties 4. low durability

Introduction to ISFET
ISFET- Ion Sensitive Field Effect Transistor
Why FET ?
Small size Fast response time Reliability Of IC

In the ISFET, the gate metal electrode of the MOSFET is replaced by an electrolyte solution which is contacted by reference electrode The metal part of reference electrode can be considered as the gate of the MOSFET.

Dissolved free ions surrounded by water molecules

Change of Current(Id) due to change of Vth

But putting Voltage of opposite polarity we can neutralize surface band bending keeping current constant Vref Reaction near gate-oxide

ISFETs
Basic Idea: removal of the metal plate of an MOSFET and expose the oxide to an electrolyte Important: Vgs - Potential applied between reference electrode Possible Respond mechanisms: 1. Interfacial potential at electrolyte-oxide interface(MOSFET) 2. Diffusion of species through the oxide Diffusion:

ISFET
Potential drop across:-Solution (Bulk diffuse layer OHP IHP -Oxide /Electrolyte surface dipoles -Capacitance of the oxide -Oxide/Semiconductor interface dipoles -Semiconductor

Effect of PH on current

Challenges:
Good interface between Gate oxide and Membrane. Size and immobilization of Antibody. Temperature stability. Proper Controlling of Feedback circuit & maintaining pH stability. Lithographic challenges

Proposed Solution
Surface to Volume Ratio should be high Solution: 2- D channel sensors Example : Graphene sheet, MoS2

Conclusion
High-performance Reliable Fast Response time Small Size Respond to any compound By using particular membrane low power consumption robustness, Sensing and analysing DNA, Protein, Enzymes ,Cells

References
Rothberg, Johnathan M (2011). "An integrated semiconductor device enabling non-optical genome sequencing". Nature 475 (7356): 348 52. doi:10.1038/nature10242. ISSN 1476-4687. Chang-Soo Lee 1, Sang Kyu Kim 1,2 and Moonil Kim 1 Ion-Sensitive FieldEffect Transistor for Biological Sensing Sensors 2009, 9, 7111-7131; doi:10.3390/s90907111

IEEE Sensor Conference Torneto October 2003 on ISFET, Theory and Practice by Prof.Dr.Ir.P.Bergveld Em, University of Twente, Fac.EE, MESA+ Research Institute

Thank you

Use of Membrane
Sensitivity depends upon SiO2 & Electrolyte interface
Gate materials are: SiO2, Si3N4, Al2O3 and Ta2O5 Surface Reaction: SiOH + H2O SiO + H3O+ SiOH + H3O+ SiOH2+ + H2O Stabilization of Membrane is important and challenging

ISFETS
Electrolyte/Oxide/Semiconductor Interface Inner Helmholtz Plane (IHP) Specifically adsorbed ions amphoteric hydroxyl groups Outer Helmholtz Plane (OHP) closest approach of solvated ions Diffuse (Gouy-Chapman) Layer diffuse charge region into the bulk electrolyte

Existing Technique
Introduction of potentiometric sensors Measuring the electrical potential difference at a solid/liquid interface Nernst Equation
= RT/F ln ai1/ai2 ai1,2 = fi*ci = activity of ions i

Constant potential drop at the inner surface of the bulb Contact between inner KCl solution and the outer solution Electrochemical couple

Application of membranes for ISFETs sensitive to different ions

Introduction
Problem of miniaturizing Less stable Problematic for in vivo measurements Bergveld 1970: Development of an Ion-Sensitive Solid State Device for Neurophysiologic Measurements Advantage of chip technology cheaper Improved characteristics Reproducibility Ion-Sensitive Field-Effect Transistor (ISFET) small and rigid fast response