11

th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Semiconductor
Intrinsic semiconductors

Extrinsic semiconductor

- dopants (impurities)
donor
acceptor
n-type (-)
p-type (+)
Bandgap
E
g
/eV
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Lecture 2


Energy

Wavelength

Frequency
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
If a semiconductor does not have many impurity levels in the
band gap, photons with energies smaller than the band gap
energy cannot be absorbed
There are no states with energies in the band gap
This explains why wide band gap semiconductors are
transparent to visible light, whereas narrow band
semiconductors (Si, GaAs) are not
Example: Pure Diamond
Semiconductor

Energy gap
&
Optical properties

11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Energy E / eV
1 eV = 1,60210
-19
J
1 kT = 0,025 eV (T = 300 K)
1 nm = 10
-9
m = 10
410 495 620 700
Wavelength / nm
560
3,0 2,5 2,2 2,05 1,7
UV IR
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Typical size of an atom: Radius ~ 10
-10
m
This can just be resolved by modern electron microscopes.
12 g of the Carbon isotope
12
C contain 6,02210
23
atoms.
Avogadro number N
A
= 6,02210
23
.
A Diamond weighing 12 g amounts to 60 Karat
(0,2 g 1 Karat) and has a volume of 3.5 cm.
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Lecture 2


Once more..
http://www.corrosionsource.com/handbook/periodic/periodic_table.gif
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Lecture 2
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Semiconductors & Band Gap Examples
Type Elements Bandgap (E
g
)
/eV
IV C 5.3
IV Si 1.1
IV Ge 0.7
IV SiC 2.8
(crystalline inorganic materials)
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
III-V Compound Semiconductors
(Periodic Table Columns III & V)
Column III Column V
B N
Al P
Ga As
In Sb
Tl not used Bi
AlN (6.28), AlP (2.45), AlAs (2.15), AlSb (1.63)
GaN (3.44), GaP (2.27), GaAs (1.43), GaSb (0.70)
InN (0.77), InP (1.35), InAs (0.36), InSb (0.18)

11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
II-VI Compound Semiconductors
(Periodic Table Columns II & VI)
Column II Column VI
Zn O
Cd S
Hg Se
Mn : sometimes Te
not used Po
ZnO (3.4), ZnS (3.68), ZnSe (2.7), ZnTe (2.26)
CdS (2.48), CdSe (1.75), CdTe (1.43)

11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Lecture 2 Symmetry and Notations


Crystal Structure long range order

the atoms are arranged in a lattice or array

well defined symmetry properties


Diamond & Zincblende

fcc face centered cubic
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Primitive translations:
a,b,c
Translation:
c l b m a n R + + =


Periodicity

1D


2D


3D


Periodicity:
- Discrete translational symmetry
- Bravais lattice, or space lattice


n, m, l integers
(n,m,l) Lattice point
0 ) ( = c b a


Volume
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano


Choice of primitive cell


- The primitive cell can be used
to reproduce the entire crystal

- The choice of unit cell is
not unique

-The smallest distances
between lattice points are
the lattice spacing



11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Basis = group of atoms forming the unit cell:
Basis
Crystal Structure
Lattice + Basis = Crystal structure
Lattice
Basis = group of atoms forming the unit cell:
Basis
Crystal Structure
Lattice + Basis = Crystal structure
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano


Crystal structure:

=lattice + basis

lattice generated by translating a direct lattice vector




basis The set of atoms which, when placed at each lattice point,
generates the crystal structure.

c l b m a n R + + =
R
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano


Crystal structure basic symmetry operations

E - Identity operation
C
n
- n-fold rotation Rotation by (2/n) radians
C
2
= (180

), C
3
= () (120

), C
4
= () (90

), C
6
= ()
(60

)
- Reflection symmetry through a plane
S
n
- C
n
rotation, followed by a reflection through a
plane rotation axis

11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano

Rotation
C
n
- n-fold rotation
n=?

C
6
= () (60

)

11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano

- Reflection
symmetry
through a plane

11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Bravais lattices
unit cell > primitive cell
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano

!



11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
fcc bcc
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
fcc
bcc

Primitive cells of fcc and bcc lattices


11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano

Tetrahedral coordination



Si and Ge have diamond lattice (C)
GaAs has a zincblende lattice



Diamond & Zincblende lattices two interpenetrating fcc
sublattices one displaced from the other by of the
distance along the diagonal of the cell (a3/4)


11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano

Diamond & Zincblende lattices two interpenetrating fcc
sublattices one displaced from the other by of the
distance along the diagonal of the cell (a3/4)



http://jas.eng.buffalo.edu/education/solid/unitCell/home.html


11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano

Miller Indices of Planes
11
th
April 2013
2
nd
Lecture
Semiconductor Physics / Micro and Nano
Planes: (hkl)
Directions: [hkl]
Distance of planes in the cubic system:
2 2 2
l k h
a
d
hkl
+ +
=

Miller Indices