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Sss7n60b (7n60b) Mosfet
Sss7n60b (7n60b) Mosfet
SSP7N60B/SSS7N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability TO-220F package isolation = 4.0kV (Note 6)
G G DS
TO-220
SSP Series
GD S
TO-220F
SSS Series
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
48 0.38
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Max. Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient Max. SSP7N60B 0.85 0.5 62.5 SSS7N60B 2.6 -62.5 Units C/W C/W C/W
SSP7N60B/SSS7N60B
Electrical Characteristics
Symbol Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.65 ------10 100 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 3.5 A VDS = 40 V, ID = 3.5 A
(Note 4)
2.0 ---
-1.0 8.2
4.0 1.2 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1380 115 23 1800 150 30 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 7.0 A, VGS = 10 V
(Note 4, 5)
--------
30 80 125 85 38 6.4 15
ns ns ns ns nC nC nC
------
---415 4.6
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 15.7mH, IAS = 7.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7.0A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature 6. Only for back side in Viso = 4.0kV and t = 0.3s
SSP7N60B/SSS7N60B
Typical Characteristics
10
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
150 C
10
0
10
25 C -55 C
o
10
-1
10 10
-1
-1
10
10
10
10
VGS = 20V
VGS = 10V
10
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
1
Note : TJ = 25
0 0 5 10 15 20 25
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
2500
10
2000
Capacitance [pF]
Ciss
1500
VDS = 480V
1000
Coss Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
500
2
Note : ID = 7.0 A
0 -1 10
10
10
10
15
20
25
30
35
40
SSP7N60B/SSS7N60B
Typical Characteristics
(Continued)
1.2
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
10 10
2
10
10 s 100 s 10 ms DC
10
100 s 1 ms 10 ms 100 ms
1 ms
10
10
DC
10
-1
10
-1
10
-2
10
0
-2
10
10
10
10
10
10
10
10
0 25
50
75
100
125
150
SSP7N60B/SSS7N60B
Typical Characteristics
(Continued)
(t), T h e r m a l R e s p o n s e
10
D = 0 .5
0 .2
10
-1
N o te s : 1 . Z J C (t) = 0 .8 5 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
PDM t1 t2
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
(t), T h e rm a l R e s p o n s e
10
D = 0 .5 0 .2 0 .1 0 .0 5
N o te s : 1 . Z J C (t) = 2 .6 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
10
-1
0 .0 2 0 .0 1
PDM t1
s in g le p u ls e
JC
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
SSP7N60B/SSS7N60B
VGS
DUT
3mA
Charge
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
L VDS ID RG DUT
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp
10V
SSP7N60B/SSS7N60B
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
VGS ( Driver )
10V
I SD ( DUT ) IRM
di/dt
VDS ( DUT )
VSD
VDD
SSP7N60B/SSS7N60B
Package Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20
1.30 0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. B, June 2002
SSP7N60B/SSS7N60B
Package Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
2.76 0.20
9.40 0.20
Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation Rev. B, June 2002
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOS EnSigna FACT FACT Quiet series FAST
FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE
OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER
SMART START SPM STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC
UltraFET VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H6
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series FAST
DISCLAIMER
FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE
OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER
SMART START SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET
VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H7