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    NTE2971 Mosfet N-Channel, Enhancement Mode High Speed Switch

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    julio797
    This document provides specifications for the NTE2971 MOSFET, an n-channel enhancement mode high speed switch. It lists maximum ratings including drain-source voltage up to 600V, gate-source voltage up to ±30V, continuous drain current up to 22A, and pulsed drain current up to 66A. It also provides typical electrical characteristics such as gate threshold voltage of 3V, on-state resistance of 0.23Ω, and forward transfer admittance of 13S. Dimensions of the MOSFET package are also included.

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    NTE2971 Mosfet N-Channel, Enhancement Mode High Speed Switch

    Uploaded by

    julio797
    59 views2 pages
    This document provides specifications for the NTE2971 MOSFET, an n-channel enhancement mode high speed switch. It lists maximum ratings including drain-source voltage up to 600V, gate-source voltage up to ±30V, continuous drain current up to 22A, and pulsed drain current up to 66A. It also provides typical electrical characteristics such as gate threshold voltage of 3V, on-state resistance of 0.23Ω, and forward transfer admittance of 13S. Dimensions of the MOSFET package are also included.

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    Nte 2971

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    This document provides specifications for the NTE2971 MOSFET, an n-channel enhancement mode high speed switch. It lists maximum ratings including drain-source voltage up to 600V, gate-source voltage up to ±30V, continuous drain current up to 22A, and pulsed drain current up to 66A. It also provides typical electrical characteristics such as gate threshold voltage of 3V, on-state resistance of 0.23Ω, and forward transfer admittance of 13S. Dimensions of the MOSFET package are also included.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as pdf or txt
    59 views2 pages

    NTE2971 Mosfet N-Channel, Enhancement Mode High Speed Switch

    Uploaded by

    julio797
    This document provides specifications for the NTE2971 MOSFET, an n-channel enhancement mode high speed switch. It lists maximum ratings including drain-source voltage up to 600V, gate-source voltage up to ±30V, continuous drain current up to 22A, and pulsed drain current up to 66A. It also provides typical electrical characteristics such as gate threshold voltage of 3V, on-state resistance of 0.23Ω, and forward transfer admittance of 13S. Dimensions of the MOSFET package are also included.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Flag for inappropriate content
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    NTE2971 MOSFET N-Channel, Enhancement Mode High Speed Switch

    Applications: D SMPS D DC-DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Drain-Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Gate-Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66A Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Channel-to-Case, Rth(ch-c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45C/W Electrical Characteristics: (Tch = +25C unless otherwise specified)
    Parameter Drain-Source Breakdown Voltage Gate-Source Breakdown Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain-Source ON Resistance Drain-Source On-State Voltage Forward Transfer Admittance Symbol Test Conditions Min 600 30 2.5 8 Typ 3.0 0.23 2.53 13 Max 10 1.0 3.5 0.30 3.30 Unit V V A mA V V S V(BR)DSS ID = 1mA, VGS = 0V V(BR)GSS VDS = 0V, IG = 100A IGSS IDSS VGS(th) RDS(on) VDS(on) |yfs| VGS = 25V, VDS = 0V VDS = 600V, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 10A VGS = 10V, ID = 10A VGS = 11A, VDS = 10V

    Electrical Characteristics (Cont'd): (Tch = +25C unless otherwise specified)


    Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf VSD IS = 10A, VGS = 0V VDD = 200V, ID = 10A, VGS = 10V, RGEN = RGS = 50 Test Conditions VGS = 0V, VDS = 25V, f = 1MHz Min Typ 4600 420 100 60 100 630 140 1.5 Max 2.0 Unit pF pF pF ns ns ns ns V

    .190 (4.82)

    .615 (15.62)

    .787 (20.0) .591 (15.02) .126 (3.22) Dia

    .787 (20.0)

    .215 (5.47)

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