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Ultra-Compact 100 GbE Transmitter Optical Sub-Assembly for 40-km SMF Transmission
Shigeru Kanazawa, Takeshi Fujisawa, Member, IEEE, Nobuhiro Nunoya, Member, IEEE, Akira Ohki, Kiyoto Takahata, Hiroaki Sanjoh, Ryuzo Iga, and Hiroyuki Ishii, Member, IEEE
AbstractThe rst ultra-compact transmitter optical sub-assembly (TOSA) has been developed for the metro-area 100 Gbit/s Ethernet (100 GbE) system. Four DFB lasers integrated with electro-absorption modulators (EADFB lasers) operated at 25.8 Gbit/s and an optical multiplexer are monolithically integrated on one chip. The chip was assembled in the compact TOSA using a three-dimensional (3D) RF circuit board supported by a spacer. The new structure provides compact and high-density interconnection with low crosstalk between RF signal lines. The TOSA is very small at just 8.0 mm 35 mm 6.5 mm including the receptacle and the exible printed circuit (FPC) and could be installed in next-generation small form 100 GbE transceivers. In addition, an error-free transmission is demonstrated through 40 km of single-mode ber at 100 Gbit/s with a modulation voltage of 2 V. Index TermsDistributed feedback laser, electro-absorption modulator, EADFB laser array, InGaAlAs, photonic integrated circuits, TOSA, 100 Gigabit ethernet.

I. INTRODUCTION NTERNET trafc continues to grow rapidly, and so we need to increase the throughput of optical communication networks. 100-Gbit/s Ethernet (100 GbE) [1] has been standardized to meet this demand. For long reach applications over single-mode ber (SMF), 100 GBASE-LR4 (10-km reach) and -ER4 (40-km reach) were standardized and 800-GHz spacing Local Area Network Wavelength Division Multiplexing (LAN-WDM) using four 25.8-Gbit/s optical signals in the 1.3- m band was adopted. For 100 GbE, a centum form-factor pluggable (CFP) [2] transceiver was dened in the CFP Multi-Source Agreement (MSA). The current 100 GbE CFP transceivers consist of many discrete components and, for example, their transmitter section consists of four 25.8-Gbit/s DFB lasers integrated with electro-absorption modulator (EADFB lasers) modules [3][7] and an optical multiplexer (MUX). Therefore, the current 100 GbE transceiver is rather large and its downsizing is strongly required. Next-generation 100 GbE transceivers have been under discussion in relation to the CFPMSA as small and cost effective transceivers. For next-generation 100 GbE transceivers, the optical section must be miniaturized. To meet this demand, a monolithically integrated transmitter chip has recently been developed on which
Manuscript received June 15, 2012; revised August 17, 2012; accepted August 27, 2012. Date of publication September 13, 2012; date of current version January 14, 2013. The authors are with NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan (e-mail: kanazawa.shigeru@lab.ntt.co.jp). Color versions of one or more of the gures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identier 10.1109/JLT.2012.2218793

four 25.8-Gbit/s EADFB lasers and a 4 1 multi-mode interference (MMI) optical MUX are integrated [8]. This chip has been installed in a compact optical module [9]. Since such a compact 4 25.8-Gbit/s transmitter module will be installed in a small next-generation transceiver, all of the electrical interfaces are expected to be exible printed circuits (FPCs) placed at the rear end of its body as with an XMD-(10 Gbit/s miniature device) TOSA [10] or a 25.8-Gbit/s TOSA. One issue when four RF signal lines and many DC bias lines are installed at the rear end of a TOSA body with a limited width is the increase in electrical crosstalk caused by the small pitch between RF signal lines. In this work, we developed an ultra-small EADFB laser array TOSA with an electrical interface through an FPC attached at the rear end by placing four 25.8-Gbit/s signal lines and DC lines on two different inner circuit boards and stacking them in the package. The three-dimensional (3D) RF circuit board supported by the spacer provides low-crosstalk, compact and high-density interconnection. As a result, an ultra-compact 8.0 mm 35 mm 6.5 mm 100 GbE TOSA was realized (including the receptacle and the FPC). The TOSA has been demonstrated at 100 Gbit/s (simultaneous operation of 4 25.8 Gbit/s) and error-free, 40-km SMF transmission was achieved. To the best of our knowledge, this is the rst 100 GbE TOSA for 40-km SMF transmission. II. DEVICE DESIGN With the previously reported 4 25.8-Gbit/s module [9], the monolithically integrated EADFB laser array chip, shown in Fig. 1(a), was used, and four DFB lasers on the chip had a phase-shifted grating. As shown in Fig. 1, in conventional phase-shifted DFB laser, there is a the conventional phase-shift on a grating at the center of laser cavity. Here, the laser ends are called the front end and rear end. The structure provides stable lasing characteristics and is suitable for laser arrays used in WDM applications such as 100 GBASE-LR4 and -ER4. However, the optical output power is modest because the laser outputs the same optical power from the rear end (Pr) as from the front end (Pf). To solve this problem, a 4 25.8-Gbit/s EADFB laser array -shifted chip, which has four DFB lasers with an asymmetric grating structure [11], has been fabricated as shown in Fig. 2. -shifted grating structure can increase the An asymmetric optical output power from the front end (Pf) while maintaining the stability of the lasing mode. Fig. 2(b) shows a photograph of the EADFB laser array chip. The chip consists of four 1.3- m EADFB lasers with monitor photodiodes (MPD) and their optical MUX. The four MPDs and DFB lasers used the same active region as InGaAlAs-based

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Fig. 1. (a) Longitudinal cross-section of a DFB laser with a conventional -shifted grating structure. (b) Photograph of a previously reported EADFB laser array chip. Fig. 3. (a) Schematic structure of the module using a package support type RF circuit board. (b) Schematic structure of the module using a spacer support type RF circuit board.

Fig. 2. (a) Longitudinal cross-section of a DFB laser with an asymmetric -shifted grating structure. (b) Photograph of an EADFB laser array chip.

compressive-strained quantum wells (QWs). InGaAlAs-based tensile-strained QWs were used for the EAMs so that they could operate at high speed and provide steep extinction characteristics. A butt-joint technique was used to connect the core layers of the MPD, the DFB laser, the EAM, and the optical MUX region. The DFB laser was 500 m long, the front region (Lf) was 225 m long, and the rear region (Lr) was 275 m long. The EAM was 150 m long. As shown in Fig. 2(b), an MMI coupler was used as the optical MUX. The advantages of an MMI coupler are that it is short and has little wavelength sensitivity. The output waveguide was tilted 7 degrees from the normal orientation of the cleaved facet to minimize facet reection. Both facets of the chip were coated with anti-reection (AR) lms. The EAM, DFB laser and MPD pads were placed perpendicularly with respect to the output beam direction and the pad pitch was 545 m. The fabricated chip was only 2.0 mm 2.6 mm in size. III. MODULE DESIGN AND FABRICATION A. Module Design To install four RF signal lines and many DC lines at the rear end of an optical transmitter package with a limited width, we must reduce the inner circuit area of the package. One of the issues as regards miniaturizing the inner circuit is the increase in electrical crosstalk. We have introduced two technologies into the new TOSA to suppress the increase and obtain the same crosstalk characteristics as that of our previously reported module, which had almost no crosstalk penalty for 100 Gbit/s operation.

Fig. 4. Simulation model of the wires between the chip and the RF circuit board.

One of the technical keys was to shorten the wire between the chip and the RF circuit board. With the previously reported module [9], the RF circuit board was supported by the package body as shown in Fig. 3(a). The RF circuit board was 0.3 mm thick. The total tolerance of a thermoelectric cooler (TEC), the LD carrier, the subcarrier, the chip and the package height is about mm. So a clearance of more than 0.3 mm is needed between the chip and the RF circuit board to avoid these components coming into contact. To connect the EAM pad and the RF circuit board with the wire bonding technique requires a horizontal distance of at least 0.45 mm between the RF circuit board edge and the EAM pad. To shorten the wires, we have proposed a spacer support type RF circuit board as shown in Fig. 3(b). The clearance between the chip and the RF circuit board is determined by the tolerance of the spacer and the chip height. The total tolerance of the spacer and the chip height was about mm, so the clearance could be shortened to 0.15 mm. And the horizontal distance between the circuit board edge and the EA pad could be shortened to 0.33 mm. The adjacent channel electrical crosstalk of the wire between the chip and the RF circuit board was estimated by using a three-dimensional electromagnetic eld simulator (ANSYS HFSS) [12]. Fig. 4 shows the simulation model of the wires between the chip and the RF circuit board. The chip is assumed as coplanar waveguides that are 0.3 mm long. The RF signal line was 0.1 mm wide, the distance between the signal line and the top ground was 0.04 mm, the signal line pitch was 545 m

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Fig. 5. Electrical crosstalk of the wires between the chip and the RF circuit board.

Fig. 7. Signal line pitch dependence of electrical crosstalk.

Fig. 8. (a) Schematic structure of 3D circuit boards and EADFB laser array chip. (b) Cross-section structure of subcarrier, chip and RF circuit board. Fig. 6. Simulation model of the RF circuit board.

which was the same as the pad pitch, the coplanar waveguide circuit board was 0.3 mm thick, the coplanar waveguide circuit board was 0.3 mm long, the wire was made of gold and was 25 m in diameter and the relative permittivity of the RF circuit board and the coplanar waveguide circuit board was 8.8. Fig. 5 shows the simulation results of the electrical crosstalk. The results show that the electrical crosstalk of the proposed spacer support type can be decreased up to 2 dB compared with that of the package support type. The other technical key was the widening of the RF signal line pitch. When setting four RF signal lines and many DC bias lines at the rear end of a TOSA body with a limited width using the conventional two-dimensional interconnection technique [13], it was necessary to narrow the pitch between the RF signal lines. Fig. 6 shows the simulation model of the RF signal lines. The RF signal line was 0.1 mm wide, the distance between the signal line and the top ground was 0.04 mm, the RF signal line was 2.4 mm long, which was the same as that of the RF circuit board in the TOSA, the RF circuit boards was 0.3 mm thick, the VIA was 0.1 mm in diameter, the VIA pitch was 0.4 mm and the relative permittivity of the RF circuit boards was 8.8. Fig. 7 shows the simulation results of the signal line pitch dependence of the electrical crosstalk. We found that the electrical crosstalk increased as the signal line pitch decreased. To ensure sufcient signal line pitch with a limited width, we have proposed the 3D interconnection technique shown in Fig. 8. DC lines are formed on the subcarrier and RF signal lines are formed on another circuit board supported on spacers and placed over the chip. By stacking the circuit boards in layers, the package width can be reduced without reducing the pitch between the RF signal lines. Fig. 9 shows the simulation model of the RF circuit board and

Fig. 9. (a) Simulation model of the RF circuit board and wires in a TOSA. (b) Simulation model of the RF circuit board and wires in a previously reported module.

the wires. The RF signal line was 0.1 mm wide, the distance between the signal line and the top ground was 0.04 mm, the pitch of the RF signal lines was 810 m, the pitch of the EAM pads was 545 m,the RF signal line in the TOSA was 2.4 mm long, the circuit board of the previously reported module was 7.7 mm wide, the RF circuit board was 0.3 mm thick, the VIA was 0.1 mm in diameter, the VIA pitch was 0.4 mm, the wire was made of gold and was 25 m in diameter, and the relative permittivity of the RF circuit boards was 8.8. The wire conditions of the TOSA model are the same as the spacer support type conditions as shown in Fig. 3(b) and those of the previous module model are the same as the package support type conditions as shown in Fig. 3(a). Fig. 10 shows the simulation results of the electrical crosstalk. As shown in this gure, the electrical crosstalk of the TOSA could be maintained at the same

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Fig. 12. Photograph of 100 GbE TOSA. Fig. 10. Electrical crosstalk of the RF circuit board and the wires.

Fig. 13. I-L characteristics of laser array.

Fig. 11. Module fabrication process using 3D circuit boards.

MUX. And its volume is less than one forth that of the previously reported module [9], which is 18 mm 54 mm 8.5 mm including the ber strain relief (ber boot) and pins. IV. MODULE PERFORMANCE When we take account of the power consumption, next-generation transceivers for 100 GbE are expected to operate under semi-cooled conditions, and so we measured the module performance at 40 C. And other than for the I-L characteristics measurement, the LD bias currents of all four lanes were 100 mA. Fig. 13 shows the ber output power as a function of the LD bias current. The EA bias voltages of all four lanes were open. The threshold currents of all the lanes were around 25 mA. The results show that the wavelength dependence of the threshold currents is very small. Fig. 14 shows the lasing spectrum of the EADFB laser array. The four DFB lasers were operated simultaneously. The EA bias voltages of all four lanes were open. The spectrum clearly shows single-mode operation. And the side mode suppression ratios (SMSRs) exceeded 40 dB for all four lanes. These SMSRs meet the 100 GBASE-LR4 and -ER4 specications ( dB). The four peak wavelengths were 1296.22, 1300.68, 1305.02 and 1309.84 nm. And these peaks coincide with the LAN-WDM grid as indicated in Fig. 14. Fig. 15 shows the small-signal frequency response of the EADFB laser array TOSA. And the EA bias voltages of lanes 0, 1, 2, and 3 were , and V, respectively. The EADFB lasers were discretely operated. The 3-dB frequency bandwidths were around 20 GHz for all four lanes. This value is sufcient for 25.8-Gbit/s operation. The results show that the wavelength dependence of the small-signal frequency response is very small. Fig. 16 shows eye diagrams of

level as that of the previously reported module. Using the 3D RF circuit board supported by the spacer, the optical transmitter package can be miniaturized without any increase in the electrical crosstalk. B. Module Fabrication Fig. 11 shows the module fabrication process using 3D circuit boards. A subcarrier with an EADFB laser array chip, a 1st lens, and an isolator were mounted on an LD carrier. The DFB lasers and the MPDs in the laser array chip were connected to the DC lines on the subcarrier with bonding wires (Fig. 11(a)). An RF circuit board and a termination circuit board were placed over the laser array chip, and then the circuit boards and the EAM pads in the laser array chip were connected with bonding wires (Fig. 11(b)). Four 50- termination resistors were placed on the termination circuit board. Each of them was connected to one of the EAM pads with bonding wire. The LD carrier was then installed in a package with a thermoelectric cooler (TEC). The circuit board and package were connected with bonding wires. Finally, a 2nd lens and a receptacle were placed in contact with the package (Fig. 11(c)). Fig. 12 shows a photograph of the EADFB laser array TOSA. The TOSA is very small at just 8.0 mm 35 mm 6.5 mm including the receptacle and the FPC. Its volume is less than one tenth that of a conventional CFP optical-transmitter section, which consists of four discrete EADFB modules an optical

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Fig. 14. Lasing wavelength spectrum of EADFB laser array (Colored areas indicate LAN-WDM grid.).

Fig. 17. Eye diagrams under 100 Gbit/s operation. LD currents were 100 mA. , and The EA bias voltages of lanes 0, 1, 2, and 3 were V, respectively.

Fig. 15. Small-signal frequency response of TOSA.

Fig. 16. Eye diagrams for BtoB transmission. LD currents were 100 mA. Under discrete operation, the EA bias voltages of lanes 0, 1, 2, and 3 are , and V, respectively. Under simultaneous operation, EA bias volt, and V, respectively. ages of lanes 0, 1, 2, and 3 were

optical signals obtained through a fourth-order Bessel lter for a back-to-back (BtoB) transmission. The mask margins (MMs) were measured using a 100 GBASE-LR4 eye mask. Under discrete operation, the EA bias voltages of lanes 0, 1, 2, and 3

were , and V, respectively. And under simultaneous operation, the EA bias voltages of lanes 0, 1, 2, and 3 were , and V, respectively. The four EAMs were driven by 2.0 Vpp, 25.78125 Gbit/s non-return to zero (NRZ), PRBS signals. We obtained clear eye opening for all four lanes under discrete and simultaneous operation. Under discrete operation, the MMs of lanes 0, 1, 2, and 3 were 27%, 32%, 20%, and 12%, respectively. Under simultaneous operation, the MMs of lanes 0, 1, 2, and 3 were 29%, 33%, 25%, and 17%, respectively. These results show that the electrical crosstalk was sufciently suppressed. The average launch powers of lanes 0, 1, 2, and 3 were , and dBm, respectively. These values are up to 3 dB lower than that of the 100 GBASE-ER4 specications. We performed a 100-Gbit/s transmission experiment over a 40-km SMF using the TOSA. Fig. 17 shows the eye diagrams of optical signals obtained through a fourth-order Bessel lter for 10-, and 40-km transmissions for all four lanes. The EADFB lasers were operated simultaneously. Even after a 40-km transmission, we obtained clear eye openings with a dynamic extinction ratio (DER) of over 9.0 dB for all four lanes. These values meet the requirement for 100 GBASE-ER4. Fig. 18 shows the 100-Gbit/s operation bit-error-rate (BER) characteristics for BtoB, 10- and 40-km transmissions. For all the lanes, error-free transmission over a 40-km SMF was demonstrated at a modulation voltage of 2.0 V. For a 40-km transmission, the receiver sensitivities of lanes 0, 1, 2, and 3 were , and dBm, respectively when the EADFB lasers were operated simultaneously. For a 10-km transmission, there was almost no power penalty for any of the four lanes. For a 40-km transmission, although the BER performance was degraded, the power penalties were less than 0.5 dB for all four lanes. The crosstalk penalties for lanes 0, 1 and 2 were about 0.3 dB and the crosstalk penalty for lane 3 was about 0.6 dB. These results show that the electrical crosstalk was suppressed and there were no signicant problems in the TOSA when generating 100 GbE optical signals.

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[7] M. Moehrle, G. Pryrembel, C. Bornholdt, A. Sigmund, W. D. Molzow, and H. Klein, Low-cost 25 Gb/s 1300 nm electroabsorption-modulated InGaAlAs RW-DFB-laser, in Proc. IPRM, 2011, Mo-1.1.2. [8] T. Fujisawa, S. Kanazawa, H. Ishii, N. Nunoya, Y. Kawaguchi, A. Ohki, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, 1.3- m 4 25-Gb/s monolithically integrated light source for metro area 100-Gb/s ethernet, IEEE Photon. Technol. Lett., vol. 23, no. 6, pp. 356358, Mar. 2011. [9] S. Kanazawa, T. Fujisawa, A. Ohki, H. Ishii, N. Nunoya, Y. Kawaguchi, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, A compact EADFB laser array module for a future 100-Gbit/s ethernet transceiver, IEEE J. Sel. Topics Quantum Electron., vol. 17, no. 5, pp. 11911197, Sept. 2011. [10] Package and Interface Standards Part 16: Transmitter and Receiver Components for Use With the LC Connector Interface, IEC 62148-16. [11] M. Usami, S. Akiba, and K. Utaka, Asymmetric l/4-shifted InGaAsP/InP DFB lasers, IEEE J. Quantum Electron., vol. QE-23, no. 6, pp. 815821, Jun. 1987. [12] [Online]. Available: http://www.ansys.com/Products/Simulation+Technology/Electromagnetics/High-Performance+Electronic+Design/ANSYS+HFSS [13] T. Yagisawa, T. Watanabe, and T. Ikeuchi, Compact 40-Gbit/s electroabsorption monolithically integrated DFB laser (EML) module integrated with a driver IC for very short reach application, in Proc. OECC, 2008, Paper WeC-1.

Fig. 18. Bit-error-rate characteristics of all four lanes. LD currents are 100 mA. , and The EA bias voltages of lanes 0, 1, 2, and 3 were V, respectively.

Shigeru Kanazawa was born in Kobe, Japan, in 1982. He received the B.S. and M.S. degrees from Tokyo Institute of Technology, Tokyo, Japan, in 2005 and 2007, respectively. In April 2007, he joined Nippon Telegraph and Telephone (NTT) Photonics Laboratories, Atsugi, Kanagawa, Japan. He has been engaged in research and development of optical semiconductor devices and integrated devices for optical communications systems. Mr. Kanazawa is a member of Japan Society of Applied Physics (JSAP) and the Institute of Electronics, Information and Communication Engineers of Japan.

V. CONCLUSION The rst ultra-compact 100 GbE TOSA was developed. A 3D RF circuit board supported by a spacer enabled us to fabricate the TOSA with a very small volume of 8.0 mm 35 mm 6.5 mm, which is less than one tenth that of a conventional CFP optical-transmitter section. Under 100 Gbit/s operation, the mask margins exceeded 17% for 100 GBASE-LR4, and the DERs exceeded 9.0 dB for all four lanes after a 40-km SMF transmission. And error-free transmission was demonstrated over a 40-km SMF. The proposed TOSA is a promising candidate for an ultra-compact 4 25.8-Gbit/s optical transmitter installed in next generation small-form 100 GbE transceivers. REFERENCES
[1] C. Cole, Beyond 100G client optics, IEEE Commun. Mag., pp. 558566, Feb. 2012. [2] [Online]. Available: http://www.cfp-msa.org/ [3] T. Fujisawa, M. Arai, N. Fujiwara, W. Kobayashi, T. Tadokoro, K. Tsuzuki, Y. Akage, R. Iga, T. Yamanaka, and F. Kano, 25 Gbit/s 1.3 m InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system, Electron. Lett., vol. 45, no. 17, pp. 900902, 2009. [4] S. Makino, H. Hayashi, K. Shinoda, T. Kitatani, T. Shiota, S. Tanaka, and M. Aoki, Uncooled CWDM 25-Gbps EA/DFB lasers for cost-effective 100-Gbps ethernet transceiver over 10-km SMF transmission, in Proc. OFC, 2008, Paper PDP21. [5] H. Oomori, H. Ooe, M. Seki, Y. Fujimura, K. Matsumoto, and Y. Murakami, An extremely compact electro-absorption modulator integrated DFB laser module for 100 Gbps ethernet over 75 km SMF reach, in Proc. ECOC, 2008, Paper P.2.07. [6] H. Takahashi, T. Shimamura, T. Sugiyama, M. Kubota, and K. Nakamura, High-power 25-Gb/s electroabsorption modulator integrated with a laser diode, IEEE Photon. Technol. Lett., vol. 21, no. 10, pp. 633635, May 2009. Takeshi Fujisawa (M07) was born in Sapporo, Japan, on January 12, 1979. He received the B.E., M.E., and Ph.D. degrees in electronic engineering from Hokkaido University, Sapporo, Japan, in 2001, 2003, and 2005, respectively. He is currently with the Nippon Telegraph and Telephone (NTT) Photonics Laboratories, Kanagawa, Japan. His current research interests include theoretical modeling of optoelectroninc devices and development of semiconductor lasers. From 2003 to 2006, he was a Research Fellow of the Japan Society for the Promotion of Science. Dr. Fujisawa is a member of the Institute of Electronics, Information and Communication Engineers (IEICE).

Nobuhiro Nunoya received the B.E., M.E. and Ph.D. degrees in physical electronics from Tokyo Institute of Technology, Japan, in 1997, 1999 and 2001, respectively. In 2002, he joined Nippon Telegraph and Telephone (NTT) Photonics Laboratories, NTT Corporation, Kanagawa, Japan. From 2008 to 2009, he worked in the University of California, Santa Barbara, CA, where he was a visiting researcher. He is currently with NTT Photonics Laboratories. His current research interests include semiconductor lasers and integrated devices for optical communications. Dr. Nunoya is a member of the Japan Society of Applied Physics (JSAP), the Institute of Electronics, Information and Communication Engineers (IEICE), and the IEEE/Photonics Society.

Akira Ohki was born in Saitama, Japan, on November 30, 1961. He received B.E. and M.E. degrees in 1984 and 1986, respectively, and the Ph.D. degree in electrical engineering, in 1994, all from Nagoya University, Japan. In 1986, he joined NTT Ibaraki Electrical Communication Laboratories, Ibaraki, where he engaged in research on MOVPE growth of compound semiconductor materials. In 1993, he moved to NTT Opto-Electronics Laboratories, Atsugi-city, where he engaged in the design and development of opto-electronics modules for bre optic communication network. Dr. Ohki is a member of the Institute of Electronics, Information and Communication Engineers of Japan.

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Kiyoto Takahata was born in Kyoto, Japan, on April 21, 1964. He received the B.E. and M.E. degrees in physical engineering from Kyoto University, Kyoto, Japan, in 1988 and 1990, respectively, and the Ph.D. degree from the Tokyo Institute of Technology, Tokyo, Japan, in 2010. In 1990, he joined NTT Opto-electronics (now Photonics) Laboratories, Kanagawa, Japan, where he was initially engaged in research on a wavelength conversion device based on semiconductor laser. Since 1993 he has been engaged in research on high-speed monolithically integrated photoreceivers, ultrafast optical packet processing based on optoelectronic circuits, and semiconductor lasers. He is a member of Japan Society of Applied Physics (JSAP) and the Institute of Electronics, Information, and Communication Engineers of Japan (IEICE).

Ryuzo Iga was born in Toyama, Japan, in 1962. He received the B.E. and M.E. degrees in applied ne chemistry and the D.E. degree in electromagnetic energy engineering from Osaka University, Osaka, Japan, in 1985, 1987 and 1995, respectively. In 1987, he joined NTT Opto-electronics Laboratories. Since then, he has been engaged in research on crystal growth of III-V semiconductor compounds. His doctorial dissertation was on selective growth by laser-assisted MOMBE. In 1999, he joined NTT Photonics Laboratories. His current research interests include MOVPE growth technologies for fabrication of optical integrated devices. Dr. Iga is a member of the Japan Society of Applied Physics.

Hiroaki Sanjoh was born in Hokkaido, Japan in 1968. He received the B.E. and M.E. degrees in applied physics from Hokkaido University, Sapporo, Japan, in 1990 and 1992, respectively. In 1992, he joined Nippon Telegraph and Telephone (NTT) Optoelectronics Laboratories, Kanagawa, Japan. He is currently with NTT Photonics laboratories, Kanagawa, Japan, where he was engaged in developmental research on optical semiconductor devices.

Hiroyuki Ishii was born in Chiba, Japan, in 1966. He received B.E., M.E. and Ph.D. degrees in electronics and communication engineering from Waseda University, Tokyo, Japan, in 1988, 1990 and 1999 respectively. In 1990 he joined NTT Opto-electronics Laboratories (now NTT Photonics Laboratories), Kanagawa, Japan. Since then, he has been engaged in developmental research on semiconductor lasers and integrated devices for optical communications systems. Dr. Ishii is a member of the Japan Society of Applied Physics (JSAP), the Institute of Electronics, Information and Communication Engineers (IEICE), and the IEEE/Photonics Society.