MUTHAYAMMAL ENGINEERING COLLEGE Ex.

No:01 Date: AIM: To determine the input & output characteristics of BJT in CE configuration and to find the h-parameters for the same. COMPONENTS REQUIRED: S.no Components 1 2 3 4 5 6 7 8 9 RPS Ammeter Ammeter Voltmeter Voltmeter Resistor Transistor Bread Board Connecting Wires Range (0-30) V (0-100) mA (0-500)A (0-10) V (0-1) V 1K BC107 -Quantity 2 1 1 1 1 2 1 -

Characteristics Of BJT In CE Configuration

FORMULE REQUIRED: VBE 1.Input impedance, hie+= IB IC 2.Output admittance, hoe= VCE

VCE=Constant.

IB=Constant.

VBE 3.Voltage gain, hre= VCE IB=Constant.

IC 4.Current gain, hfe= IB VCE=Constant.

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PROCEDURE: INPUT CHARACTERISTICS: 1.Connections are given as per the circuit diagram. 2. At first VCE is kept constant at any non-zero value. 3.The base current variation with VBE is noted. 4.The readings are tabulated and graph is drawn by taking VBE along X-axis and IB along Y-axis. 5.The values of hfe and hie were calculated. OUTPUT CHARACTERISTICS 1.Connections are given as per the circuit diagram. 2.At first IB is kept constant at any non-zero current value. 3.The voltage VCE is varied by varying the regulated power supply. 4.The collector current variations with VCE is noted. 4.The readings are tabulated and the graph is drawn. 5.The values of hoe&hfe were calculated.

RESULT Thus the static characteristics of transistor under CE configuration of hybrid parameter was determined, 1.Input Impedance, hie= 2.Output Admittance hoe= 3.Voltage gain, hre= 4.Current gain, hfe=

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Ex.No:02 Date: AIM:

Characteristics Of BJT In CC Configuration

To determine the input & output characteristics of BJT in CC configuration and to find the h-parameters for the same. COMPONENTS REQUIRED: S.no Components 1 2 3 4 5 6 7 8 9 RPS Ammeter Ammeter Voltmeter Voltmeter Resistor Transistor Bread Board Connecting Wires Range (0-30) V (0-10) mA (0-1)A (0-10) V (0-30) V 68K BC107 -Quantity 2 1 1 1 1 2 1 -

FORMULE REQUIRED: VBE 1.Input impedance, hie+= IB IC 2.Output admittance, hoe= VCE

VCE=Constant.

IB=Constant.

VBE 3.Voltage gain, hre= VCE IB=Constant.

IC 4.Current gain, hfe= VCE=Constant.

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MUTHAYAMMAL ENGINEERING COLLEGE IB PROCEDURE: INPUT CHARACTERISTICS: 1.Connections are given as per the circuit diagram. 2. At first VEC is kept constant at any non-zero value 2.The base current variation with VBC is noted. 3.The readings are tabulated and graph is drawn by taking VBC along X-axis and IB along Y-axis. 4.The values of hfe and hie were calculated. OUTPUT CHARACTERISTICS 1.Connections are given as per the circuit diagram. 2.At first IB is kept constant at any non-zero current value. 3.The voltage VCE is varied by varying the regulated power supply. 4.The emitter current variations with VCE are noted. 4.The readings are tabulated and the graph is drawn. 5.The values of hoe&hfe were calculated.

RESULT Thus the static characteristics of transistor under CE configuration of hybrid parameter was determined, 1.Input Impedance, hie= 2.Output Admittance hoe= 3.Voltage gain, hre= 4.Current gain, hfe=

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Ex.No:03 Date: AIM:

Characteristics Of BJT In CB Configuration

To determine the input & output characteristics of BJT in CB configuration and to find the h-parameters. COMPONENTS REQUIRED: S.no Components 1 2 4 5 6 7 8 9 RPS Ammeter Voltmeter Voltmeter Resistor Transistor Bread Board Connecting Wires Range (0-30) V (0-10) mA (0-30) V (0-1) V 1K BC107 -Quantity 2 2 1 1 2 1 1 -

FORMULE REQUIRED: VBE 1.Input impedance, hib= IE IC 2.Output admittance, hob= VCB VBE 3.Reverse Voltage gain, hrb= VCB IC 4.ForwardCurrent gain, hfb= IE

VCB=Constant.

IE=Constant.

IE=Constant.

VCB=Constant.

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PROCEDURE: INPUT CHARACTERISTICS: 1.Connections are given as per the circuit diagram. 2. At first VCB is kept constant at any non-zero value. 3.Note the emitter current by varying VBE. 4.The readings are tabulated and graph is drawn by taking VBE along X-axis and IE along Y-axis. 5.The values of hfb and hib were calculated. OUTPUT CHARACTERISTICS 1.Connections are given as per the circuit diagram. 2.At first IE is kept constant at any non-zero current value. 3.The voltage VCB is varied by varying the regulated power supply and note down the collector current variations with VCB is noted. 4.The readings are tabulated and the graph is drawn. 5.The values of hob & hfb were calculated.

RESULT Thus the static characteristics of transistor under CB configuration of hybrid parameter was determined, PARAMETERS 1.Input Impedance, hib 2.Output Admittance hob 3. Reverse Voltage gain, hrb 4. Forward Current gain, hfb PRACTICAL READINGS

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Ex.No:04 Date:

STATIC CHARACTERISTICS AND PARAMETER DETERMINATION OF JFET

AIM: To determine the static characteristics of JFET. COMPONENTS REQUIRED: S.no Components 1 2 3 4 5 6 7 8 RPS Ammeter Voltmeter Voltmeter Resistor JFET Bread Board Connecting Wires Range (0-30) V (0-100) mA (0-10) V (0-30) V 1K BFW10 -Quantity 2 1 1 1 1 2 1 -

FORMULE REQUIRED: VDS 1.Drain resistance, rD= ID . VDS2-VDS1 ID2-ID1

VGS=Constant. ID VDS=Constant.

2.Transcondutace, gm==

VGS

ID2-ID1 VGS2-VGS1 3.Amplification factor =gm X rD

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PROCEDURE: DRAIN CHARACTERISTICS: 1.Connections are given as per the circuit diagram. 2.For drain characteristics the gate source is kept constant. 3.The VDS is varied by the regulated power supply and the corresponding values of drain current to be noted. 4.The same procedure is repeated for different values of VDS. 5.The graph is plotted between VDS&ID. 6.The drain resistance is calculated from the graph by the formula, VDS rp= ID TRANSFER CHARACTERISTICS: 1.Connections are given as per the circuit diagram. 2.For transfer characteristics the drain source voltage is kept constant. 3.The VGS is varied by the regulated power supply and the corresponding values of drain current to be noted. 4.The same procedure is repeated for different values of VGS. 5.The graph is plotted between VGS &ID. 6.The drain resistance is calculated from the graph by the formula, ID gm= VDS=Constant. VGS 7.Amplification factor =gmXrD. RESULT Thus the static characteristics and parameter of JFET was verified, 1.Drain resistance (rD)= 2.Transconductance (gm)= VGS=Constant.

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MUTHAYAMMAL ENGINEERING COLLEGE 3.Amplification factor ()= Ex.No:05 Date: V-I CHARACTERISTICS OF SEMICONDUCTOR DIODE

AIM To determine the reverse saturation current and dynamic resistance of the diode from its V-I characteristics. COMPONENTS REQUIRED: S.no Components 1 2 3 4 5 6 7 8 RPS Ammeter Voltmeter Voltmeter Resistor PN Junction DIODE Bread Board Connecting Wires Range (0-30) V (0-10) mA (0-1) V (0-30) V 2.2K IN4007 -Quantity 2 1 1 1 1 2 1 -

FORMULE REQUIRED: 1.PN junction for forward bias, rf=

Vf If Vr

2.PN junction for reverse bias, rr= Ir PROCEDURE: 1.Connections are given as per the circuit diagram. 2.The supply voltage is increased gradually in step by using regulated power supply. 3.At each step the readings are tabulated for both forward and reverse bias conditions. 4.The graph is drawn with voltage on X-axis and current on Y-axis for forward and reverse bias conditions. RESULT Thus the static characteristics of semiconductor DIODE was verified,

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MUTHAYAMMAL ENGINEERING COLLEGE 1.Semiconductor diode for forward bias Dynamic resistance= 2. Semiconductor diode for reverse bias Dynamic resistance Ex.No:06 Date: AIM To study and determine V-I characteristics of the ZENER diode in forward and reverse biased conditions. COMPONENTS REQUIRED: S.no Components 1 2 3 4 5 6 7 RPS Ammeter Voltmeter Resistor ZENER DIODE Bread Board Connecting Wires Range (0-30) V (0-100) mA (0-15) V 220 FZ9.1 -Quantity 1 1 1 1 1 V-I CHARACTERISTICS OF ZENER DIODE

FORMULE REQUIRED: Vf 1. Forward bias, rf= If Vr 2. Reverse bias, rr= Ir PROCEDURE: 1.Connections are given as per the circuit diagram. 2.The supply voltage is increased gradually in step by using regulated power supply. 3.At each step the readings are tabulated for both forward and reverse bias conditions. 4.The graph is drawn with voltage on X-axis and current on Y-axis for forward and reverse bias conditions. RESULT Thus the static characteristics of ZENER DIODE was verified,

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MUTHAYAMMAL ENGINEERING COLLEGE 1.Zener diode for forward bias = 2. Zener diode for reverse bias = Ex.No:07 Date: V-I CHARACTERISTICS OF UJT

AIM To study and determine V-I characteristics of the UJT and to plot the graph. COMPONENTS REQUIRED: S.no Components 1 2 3 4 5 6 7 8 RPS Ammeter Voltmeter Voltmeter Resistor UJT Bread Board Connecting Wires Range (0-30) V (0-30) mA (0-10) V (0-30) V 1K 2N2646 -Quantity 1 1 1 1 1 1 -

PROCEDURE: 1.Connections are given as per the circuit diagram. 2.Set VBB=10V as constant. 3.Vary VEE and note down the readings of IE from various values of VEB. 4.Plot the graph VEB, IE for a constant VBB. 5.Determine the stand off ratio. = Vp-Vv/VBB

RESULT Thus the V-I characteristics of UJT was verified,

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MUTHAYAMMAL ENGINEERING COLLEGE Intrinsic stand off ratio =

Ex.No:08 Date: AIM

ZENER DIODE AS VOLTAGE REGULATOR

To determine the voltage regulation for zener diode. COMPONENTS REQUIRED: S.no Components 1 2 3 4 5 6 7 8 9 RPS Ammeter Voltmeter Voltmeter Resistor Zener diode Potentiometer Bread Board Connecting Wires

Range (0-30) V (0-100)A (0-30) V (0-1) V 1K FZ6.2 2.2K ---

Quantity 2 1 1 1 1 1 1 1 -

PROCEDURE: 1.Connections are given as per the circuit diagram. 2.The input voltage varied the line regulation was obtained in each step out put voltage was noted. 3.By varying potentiometer the load regulation obtained, the out put voltage noted down. 4. At each step the readings are tabulated and required graphs drawn.

RESULT Thus the voltage regulator for zener diode was determined and the readings for line and load regulation was tabulated and graph was drawn.

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Ex.No:09 Date:

Frequency Response Of Common Emitter Amplifier

AIM: To determine the frequency response of CE amplifiers and to draw the frequency response curve.

COMPONENTS REQUIRED: S.no Components 1 2 3 4 5 6 7 8 Function generator Capacitor Resistor Transistor Bread Board Connecting Wires Resistors RPS Range -0.1F 1.2K, 5.2K BC107 -100K, 320K Quantity 1 1 1,1 11,1 1

PROCEDURE: 1.Connections are given as per the circuit diagram. 2.The input frequency varied gain was obtained in each step out put voltage was noted. 3. At each step the readings are tabulated and required graphs drawn. RESULT Thus the frequency response of common emitter amplifier was determined and the graph was drawn. Band width= KHz.

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